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onsemi ESD7382MUT5G
- Part No.:
- ESD7382MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD7382MUT5G.pdf
- Description:
- LOW CAP UNI-DIRECTIONAL ESD PROT
- Quantity:
- Payment:
- Shipping:
Inventory:9,925
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Product details
Overview
ESD7382MUT5G from onsemi is a unidirectional ESD protection diode in X3DFN2 package, featuring 0.37 pF junction capacitance, 5.0 V stand-off voltage, and clamping voltage of 8.0 V at 1 A IPP - designed for ultra-high-frequency signal lines including USB 2.0 high-speed data paths and antenna interfaces.
For engineers reviewing the ESD7382MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include sub-0.4 pF capacitance, <1 ns response time, IEC61000-4-2 Level 4 (±20 kV contact) compliance, and 0.60 mm × 0.30 mm footprint for space-constrained RF and portable designs.
Technical Context
This device operates as a unidirectional transient voltage suppressor with cathode-anode polarity, optimized for low-capacitance signal integrity preservation. Its dynamic resistance of 0.32 Ω and insertion loss of 0.030 dB at 1 MHz enable minimal RF distortion in high-speed digital and RF front-end paths.
The ESD7382MUT5G uses silicon PN-junction architecture with fast avalanche breakdown triggered by ESD transients. It meets IEC61000-4-2 Level 4 without external biasing and sustains ±20 kV contact discharge while maintaining leakage current ≤1.0 nA at 5.0 V reverse bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.37 pF @ 0 V, 1 MHz - preserves signal integrity on USB 2.0 and RF antenna lines |
| Stand-off Voltage (VRWM) | 5.0 V - blocks normal operating voltage while enabling clamping above threshold |
| Clamping Voltage (VC) | 8.0 V @ 1 A IPP - limits transient overvoltage to safe levels for downstream ICs |
| ESD Rating | IEC61000-4-2 Level 4: ±20 kV contact - certified robustness for handheld and portable electronics |
| Response Time | < 1 ns - activates before sensitive circuitry sustains damage from fast ESD pulses |
| Leakage Current (IR) | ≤1.0 nA @ 5.0 V - avoids DC loading on low-power sensor or RF bias networks |
| Package Size | 0.60 mm × 0.30 mm × 0.24 mm - fits within tight pitch layouts near connectors and antennas |
Pinout & Package
X3DFN2 package (Case 152AF), 2-terminal surface-mount device with 0.35 mm pitch; ultra-low profile (0.24 mm height) and Pb-free, RoHS-compliant construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Marked) | Cathode | Connected to protected line; conducts during positive transients to ground |
| 2 | Anode | Connected to system ground; completes ESD current path during clamp event |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.37 pF enables use on 480 Mbps USB 2.0 differential pairs without signal degradation |
| Low dynamic resistance | 0.32 Ω minimizes voltage overshoot during multi-amp ESD events |
| Sub-millimeter footprint | 0.60 mm × 0.30 mm saves board area in smartphone camera modules and IoT antenna feeds |
| IEC61000-4-2 Level 4 certified | ±20 kV contact rating validated per standard test setup - no derating needed for end-equipment certification |
Applications
| USB 2.0 High-Speed Data Lines | Cellular Antenna Feed Lines |
|---|---|
Use Scenario: Protecting D+ and D− pins of USB transceivers in smartphones and tablets against user-hand ESD. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed directly at connector, diverting ESD current to ground before reaching PHY. Use Value: 0.37 pF capacitance prevents signal rise-time degradation and maintains eye diagram integrity at 480 Mbps. | Use Scenario: Safeguarding RF input of LTE/5G front-end modules from electrostatic discharge during SIM card or battery handling. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted between antenna switch and LNA input. Use Value: 0.030 dB insertion loss at 1 MHz and stable sub-0.55 pF capacitance up to 8.5 GHz preserve RF gain and noise figure. |
| GPIO Protection in Wearables | Power Line Transient Suppression |
Use Scenario: Shielding touch-sensor interrupt lines and button inputs in smartwatches from human-body-model ESD. IC Role / Device Role / Timing Role: Standalone bidirectional-capable (via layout) protection element on 1.8 V I/O rails. Use Value: 5.0 V VRWM aligns with common low-voltage microcontroller I/O thresholds; 1.0 nA leakage avoids battery drain. | Use Scenario: Clamping voltage spikes on 5 V power rails feeding RF transceivers or sensors in industrial gateways. IC Role / Device Role / Timing Role: Secondary-level protection downstream of bulk TVS, absorbing residual fast transients missed by primary clamp. Use Value: 8.0 V clamping at 1 A ensures rail stays below 9 V during ESD, preventing brownout resets in connected ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD1E05U06DPYR | 0.45 pF capacitance, 5.5 V VRWM, SOD-523 package (1.2 × 0.8 mm) | Larger footprint; higher capacitance reduces suitability for >200 MHz signals | Preferred where board space allows and slightly higher clamping (9.5 V @ 1 A) is acceptable |
| UMK105CG470JV-F | Not applicable - ceramic capacitor, not an ESD diode | N/A - incorrect device category | Excluded: this is a 47 pF MLCC, not a transient suppressor |
Compared with TPD1E05U06DPYR, ESD7382MUT5G offers 0.08 pF lower capacitance and 0.6 mm² smaller footprint - critical for antenna feed and USB 2.0 routing in compact mobile PCBs; UM105CG470JV-F is not functionally comparable and must not be substituted.
Availability
ESD7382MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, cellular antenna feed line safeguarding, and wearable GPIO hardening requiring stable component supply across high-volume consumer electronics production.
Supply support for ESD7382MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7382MUT5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for ultra-low-capacitance, high-frequency signal line protection in space-constrained portable and wireless devices.
FAQ
What is the polarity configuration of the ESD7382MUT5G?
The ESD7382MUT5G is a unidirectional ESD protection diode with cathode (Pin 1) connected to the protected line and anode (Pin 2) tied to ground. It conducts only during positive transients on the protected line, making it ideal for DC-biased signal paths like USB D+ and D− lines where reverse conduction must be avoided.
Does the ESD7382MUT5G meet IEC61000-4-2 Level 4 requirements?
Yes, the ESD7382MUT5G is rated for ±20 kV contact discharge per IEC61000-4-2 Level 4. This is verified using standardized test setups per Figure 10 in the official datasheet, with clamping waveforms captured via oscilloscope screenshots confirming sustained performance under full-spec stress conditions.
What is the maximum operating temperature range for the ESD7382MUT5G?
The ESD7382MUT5G supports a junction and storage temperature range of −40°C to +125°C. This enables reliable operation in automotive cabin modules, industrial edge sensors, and outdoor-connected devices where ambient temperatures exceed standard commercial limits.
Can the ESD7382MUT5G be used on bidirectional signal lines like I²C?
No - the ESD7382MUT5G is unidirectional and unsuitable for true bidirectional buses without additional design considerations. For I²C or other bidirectional lines, a dedicated bidirectional ESD diode such as ESD7384MUT5G (same package, dual-line configuration) is required to ensure clamping during both positive and negative transients.
What is the thermal resistance (RJA) of the ESD7382MUT5G on FR-5 board?
The thermal resistance from junction-to-ambient (RJA) for the ESD7382MUT5G mounted on an FR-5 board is 400°C/W, as specified in the Maximum Ratings table. This value assumes standard 1.0 × 0.75 × 0.62 inch board dimensions and influences power dissipation limits during repetitive surge events.
ESD7382MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 5.2V
- Voltage - Clamping (Max) @ Ipp:
- 10V
- Current - Peak Pulse (10/1000µs):
- 3A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- 0.25pF @ 1GHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD7382MUT5G FAQ
1.How can I place an order for ESD7382MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7382MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7382MUT5G reliable?
The price and inventory of ESD7382MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7382MUT5G is usually 5 days.
3.What payment methods are accepted for ESD7382MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7382MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7382MUT5G?
ESD7382MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7382MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7382MUT5G?
For technical support, including ESD7382MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7382MUT5G requirements.
6.How does Aetrix verify that ESD7382MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD7382MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7382MUT5G meets industry standards.
7.What is the process for return or replacement of ESD7382MUT5G?
All ESD7382MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7382MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7382MUT5G part is unused and in its original packaging.
Return procedure for ESD7382MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7382MUT5G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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