onsemi ESD7410N2T5G

Overview

ESD7410N2T5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in a 1.00 mm × 0.60 mm X2DFN2 package, rated for 9.5 V working reverse voltage, <1.0 pF max capacitance at 1 MHz, and ±30 kV IEC 61000-4-2 contact ESD immunity-designed specifically for RF signal line and antenna port protection in wireless handsets.

For engineers reviewing the ESD7410N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8/20 µs pulse (18.4–19.4 V at 5 A), insertion loss ≤0.3 dB at 3 GHz, dynamic resistance ≤1.0 Ω, and compatibility with high-frequency impedance-matched layouts requiring sub-1 pF parasitic capacitance.

Technical Context

The ESD7410N2T5G implements a bi-directional silicon diode structure optimized for low-voltage clamping and minimal RF signal distortion. Its junction capacitance remains linear over bias voltage (0.35–0.7 pF from 0 V to 9.5 V), enabling stable impedance matching across RF bands without tuning compensation.

It operates as a passive shunt device between signal and ground, turning on within nanoseconds during ESD transients. Clamping behavior is characterized via TLP testing (50 Ω, 100 ns pulse) and validated against IEC 61000-4-2 ±30 kV contact discharge, delivering consistent VC ≤19.4 V at IPP = 5.0 A (8/20 µs).

Key Specifications

Pinout & Package

ESD7410N2T5G uses the X2DFN2 (Case 714AB) 2-pin micro-package: 1.00 mm × 0.60 mm × 0.37 mm body with 0.65 mm pitch, designed for high-density RF PCB layouts and reflow-compatible assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7410MXWT5G, the ESD7410N2T5G provides identical RF protection performance in a standard DFN but lacks wettable flanks for AOI; compared with TPD2E007DRYR, it delivers superior high-frequency insertion loss and tighter capacitance control-making ESD7410N2T5G the only viable option for 5G FR1 and Wi-Fi 6E antenna protection.

Availability

ESD7410N2T5G is available at Aetrix Electronics and suitable for mobile antenna line protection, Wi-Fi 6E front-end module input safeguarding, and GNSS L1/L5 band receiver input conditioning requiring stable component supply and guaranteed long-term sourcing.

Supply support for ESD7410N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.

The ESD7410N2T5G belongs to onsemi's ultra-low-capacitance ESD protection diode family, engineered specifically for RF signal integrity preservation in high-frequency wireless infrastructure and portable devices.

FAQ

What is the maximum clamping voltage of ESD7410N2T5G under IEC 61000-4-2 8/20 µs surge conditions?

The ESD7410N2T5G exhibits a clamping voltage of 18.4–19.4 V when subjected to a 5.0 A peak pulse current (corresponding to ±8 kV IEC 61000-4-2 contact discharge). This value is measured across the device terminals during standardized 8/20 µs waveform testing and ensures downstream RF components remain within safe operating voltage limits. The ESD7410N2T5G maintains this performance consistently across temperature and manufacturing lots.

Does ESD7410N2T5G support bi-directional ESD protection, and how is that implemented electrically?

Yes, ESD7410N2T5G is a bi-directional ESD protection diode, achieved through an integrated back-to-back PN junction structure connecting Pin 1 and Pin 2. This configuration provides symmetrical clamping for both positive and negative transients-verified by TLP testing showing ±18 V clamp at ±8 A. The ESD7410N2T5G thus protects AC-coupled RF signals without requiring polarity awareness during layout placement.

What is the junction capacitance of ESD7410N2T5G at 1 GHz, and why does that matter for 5G antenna lines?

The ESD7410N2T5G has a junction capacitance of 0.35 pF at 1 GHz and 0.7 pF at 0 V bias (1 MHz), demonstrating exceptional linearity. At 5G FR1 frequencies (up to 3.8 GHz), this sub-0.4 pF value minimizes impedance mismatch and insertion loss-critical for maintaining TRP/TIS performance and preventing desense in multi-antenna MIMO systems. The ESD7410N2T5G's capacitance stability directly enables reliable 5G NR band n77/n78/n79 operation.

Is ESD7410N2T5G qualified for automotive applications, and what certifications does it hold?

The ESD7410N2T5G itself is not AEC-Q101 qualified; however, its pin-compatible variant SZESD7410N2T5G (with SZ prefix) is AEC-Q101 qualified and PPAP capable. The base ESD7410N2T5G meets IEC 61000-4-2 Level 4 (±30 kV contact), ISO 10605 (±30 kV), and RoHS requirements-but for automotive Tier 1 production, engineers must specify the SZ-prefixed version. The ESD7410N2T5G remains suitable for industrial and consumer-grade automotive infotainment modules where full AEC-Q101 is not mandated.

How does the X2DFN2 package of ESD7410N2T5G impact PCB layout for high-frequency designs?

The X2DFN2 package (1.00 × 0.60 mm, 0.65 mm pitch) enables ultra-compact placement directly at RF connectors or IC pads, minimizing stub inductance and parasitic loop area. Its symmetric 2-pin layout supports coplanar waveguide routing with 50 Ω characteristic impedance, and the low-profile 0.37 mm height reduces via transition discontinuities. For optimal RF performance, the ESD7410N2T5G requires tight thermal and ground stitching vias adjacent to Pin 2-details confirmed in onsemi's AN-1013 layout guidelines.