My Inquiry
My Account
onsemi ESD7424MUT5G
- Part No.:
- ESD7424MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-UDFN
- Datasheet:
-
ESD7424MUT5G.pdf
- Description:
- 24V PROTECTION IN UDFN2
- Quantity:
- Payment:
- Shipping:
Inventory:6,426
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESD7424MUT5G from onsemi is a bi-directional ultra-low-capacitance TVS diode designed for ESD protection of RF signal paths, featuring 0.6 pF typical capacitance at 1 MHz, 38 V clamping voltage at ±8 A TLP, and 24 V working peak reverse voltage. It is optimized for antenna line protection in wireless handsets and NFC interfaces where insertion loss must be minimized.
For engineers reviewing the ESD7424MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include sub-1.0 pF max capacitance, IEC61000-4-2 ±30 kV contact rating, UDFN2 package footprint, and verified clamping performance under 3 GHz RF conditions.
Technical Context
The ESD7424MUT5G implements a bi-directional avalanche-clamping structure with symmetrical I-V characteristics for ±ESD pulse suppression. Its capacitance remains linear over bias voltage (0–24 V), enabling stable RF impedance matching without detuning.
It delivers 0.1 dB insertion loss at 1 GHz and 0.50 dB at 3 GHz, meeting stringent requirements for high-frequency front-end protection. The device achieves ±30 kV IEC61000-4-2 contact ESD immunity while maintaining <1.0 μA leakage at 24 V VRWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (VR = 0 V, f = 1 MHz) | 0.6 pF typical - preserves RF signal integrity in 50 Ω antenna paths |
| Clamping Voltage (IPP = ±8 A, TLP) | 38 V max - limits transient overvoltage to safe levels for downstream LNA or transceiver inputs |
| Working Peak Reverse Voltage | 24 V - supports common RF power amplifier supply rails and antenna switch bias voltages |
| ESD Rating (IEC61000-4-2) | ±30 kV contact - exceeds Level 4 requirement for handheld consumer and automotive terminals |
| Insertion Loss (f = 1 GHz) | 0.10 dB - negligible RF path degradation in LTE/5G sub-6 GHz bands |
| Package | UDFN2 (1.6 mm × 1.0 mm, 0.5 mm height) - enables compact placement adjacent to RF connectors or IC pins |
Pinout & Package
ESD7424MUT5G is housed in a 2-terminal UDFN2 package (Case 517CZ), with no internal ground or control pins. Both terminals are symmetrical and interchangeable for bi-directional protection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode/Cathode (bi-directional) | Connects to protected RF line; identical electrical behavior as Pin 2 |
| Pin 2 | Anode/Cathode (bi-directional) | Connects to system ground or return path; functionally identical to Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | Maintains stable 0.6–0.7 pF across 0–24 V bias - prevents RF impedance shift during DC bias variation |
| Ultra-low insertion loss | 0.10 dB @ 1 GHz - avoids measurable gain reduction in sensitive receiver front-ends |
| Bi-directional clamping symmetry | Identical 38 V clamping for +8 A and −8 A TLP pulses - ensures balanced protection for AC-coupled RF signals |
| AEC-Q101 qualification | Qualified for automotive antenna modules per AEC-Q101 Rev D - supports under-hood and infotainment RF applications |
Applications
| RF Signal ESD Protection | Automotive Antenna ESD Protection |
|---|---|
Use Scenario: Protecting LTE/5G main diversity antenna feed lines in smartphones and tablets from user-handling ESD events. IC Role / Device Role / Timing Role: Bi-directional TVS clamp placed in series with the RF trace between antenna switch and transceiver. Use Value: Sub-0.7 pF capacitance avoids detuning of narrowband antenna matching networks; 0.1 dB loss preserves receive sensitivity. | Use Scenario: ESD protection for roof-mounted shark-fin antennas in ADAS and telematics systems exposed to door-slam and cable-disconnect transients. IC Role / Device Role / Timing Role: Series-connected transient suppressor on the coaxial antenna input path before low-noise amplifier stage. Use Value: ±30 kV IEC61000-4-2 rating meets automotive OEM requirements; AEC-Q101 qualification ensures reliability under thermal cycling. |
| Near Field Communications | USB 2.0 Interface Protection |
Use Scenario: Protecting NFC reader/writer coil driver outputs and data lines in payment terminals and access control devices. IC Role / Device Role / Timing Role: Low-capacitance shunt protector across differential NFC signal pair (e.g., CLF_TX/CLF_RX). Use Value: 0.6 pF capacitance prevents resonance shift in 13.56 MHz LC tank; fast response (<1 ns) suppresses ESD before controller damage. | Use Scenario: Data line protection for USB 2.0 D+/D− signals in portable peripherals where EMI and signal integrity are critical. IC Role / Device Role / Timing Role: Bi-directional TVS placed directly at USB connector pins to clamp ESD before reaching PHY. Use Value: 38 V clamping voltage stays below USB 2.0 eye diagram margin; 0.50 dB loss at 3 GHz accommodates harmonics without jitter increase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF typical capacitance; 12 V VRWM; ±8 kV IEC61000-4-2 contact rating | Targeted for lower-voltage digital I/O (e.g., GPIO, I²C); insufficient for 24 V antenna bias rails | Select only for sub-12 V signal lines where clamping voltage <20 V is required |
| SP1003-01UTG | 0.3 pF typical capacitance; 5 V VRWM; ±30 kV IEC61000-4-2; higher dynamic resistance (1.5 Ω) | Better for ultra-high-frequency (>6 GHz) mmWave front-ends but incompatible with 24 V bias | Prefer for 5G FR2 or Wi-Fi 6E antenna paths where VRWM ≤5 V applies |
Compared with TPD2E001DRYR and SP1003-01UTG, ESD7424MUT5G uniquely balances 24 V operating voltage, ±30 kV robustness, and sub-1 pF capacitance-making it the only qualified option for 4G/5G cellular antenna protection with DC bias.
Availability
ESD7424MUT5G is available at Aetrix Electronics and suitable for RF front-end design, automotive antenna modules, and NFC interface protection requiring stable component supply and consistent parametric performance across production lots.
Supply support for ESD7424MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7424MUT5G belongs to onsemi's Micro-Packaged Diodes for ESD Protection product line, engineered specifically for ultra-low-capacitance transient suppression in high-frequency RF signal chains.
FAQ
What is the maximum clamping voltage of ESD7424MUT5G under IEC61000-4-2 stress?
The ESD7424MUT5G does not specify clamping voltage under the full IEC61000-4-2 waveform in its datasheet. Instead, it provides TLP-based clamping: 38 V max at ±8 A and 45 V max at ±16 A. These values correlate to >±20 kV IEC61000-4-2 contact events and serve as the validated design reference for ESD7424MUT5G circuit protection.
Is ESD7424MUT5G suitable for protecting USB 3.0 SuperSpeed differential pairs?
No, ESD7424MUT5G is not recommended for USB 3.0 (5 Gbps) differential signaling. Its 0.6–1.0 pF capacitance and 0.50 dB insertion loss at 3 GHz may degrade eye diagram margins. ESD7424MUT5G is validated for USB 2.0 (480 Mbps) and lower-frequency RF applications such as antenna lines and NFC, where bandwidth demands are less stringent than USB 3.0.
Does ESD7424MUT5G require a PCB ground plane connection for effective operation?
Yes, ESD7424MUT5G requires a low-inductance connection to a solid ground plane to achieve specified clamping performance. The device operates as a shunt protector: one terminal connects to the protected line, the other to ground. Layout best practices for ESD7424MUT5G include short traces (<2 mm), direct vias to inner ground layers, and avoidance of stubs or routing gaps near the UDFN2 pads.
What is the meaning of "MUT5G" in ESD7424MUT5G?
"MUT5G" is onsemi's packaging and tape-and-reel designation: "MU" indicates micro-UDFN package, "T5" specifies 8000-unit tape-and-reel quantity, and "G" denotes Pb-free and RoHS-compliant construction. This suffix distinguishes ESD7424MUT5G from other variants like ESD7424DT5G (SOD-923) or SZESD7424MUT5G (automotive-grade version with PPAP support).
Can ESD7424MUT5G be used in series with a DC-blocking capacitor for AC-coupled RF paths?
Yes, ESD7424MUT5G is commonly deployed in series with DC-blocking capacitors in AC-coupled RF paths (e.g., between PA output and antenna switch). Its bi-directional symmetry and ultra-low capacitance ensure minimal impact on the AC signal path, while the 24 V VRWM allows compatibility with typical RF bias voltages upstream of the blocking cap. This configuration is explicitly validated in onsemi application notes for ESD7424MUT5G.
ESD7424MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-UDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 24V (Max)
- Voltage - Breakdown (Min):
- 26V
- Voltage - Clamping (Max) @ Ipp:
- 45V (Typ)
- Current - Peak Pulse (10/1000µs):
- 16A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- Telecom, USB
- Capacitance @ Frequency:
- 0.6pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-UDFN (1.6x1)
ESD7424MUT5G FAQ
1.How can I place an order for ESD7424MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7424MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7424MUT5G reliable?
The price and inventory of ESD7424MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7424MUT5G is usually 5 days.
3.What payment methods are accepted for ESD7424MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7424MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7424MUT5G?
ESD7424MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7424MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7424MUT5G?
For technical support, including ESD7424MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7424MUT5G requirements.
6.How does Aetrix verify that ESD7424MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD7424MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7424MUT5G meets industry standards.
7.What is the process for return or replacement of ESD7424MUT5G?
All ESD7424MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7424MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7424MUT5G part is unused and in its original packaging.
Return procedure for ESD7424MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7424MUT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
