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onsemi ESD7462N2T5G
- Part No.:
- ESD7462N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- -
- Datasheet:
-
ESD7462N2T5G.pdf
- Description:
- ESD7462N2 - ULTRA-LOW CAPACITANC
- Quantity:
- Payment:
- Shipping:
Inventory:205,199
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Product details
Overview
ESD7462N2T5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in X2DFN2 package, designed for RF signal line protection with 0.3 pF typical junction capacitance, ±18 kV IEC 61000-4-2 contact ESD rating, and 0.05 dB insertion loss at 1 GHz - deployed in antenna feed lines of wireless handsets and NFC interfaces.
For engineers reviewing the ESD7462N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include capacitance linearity over voltage, clamping performance under ±8 kV IEC contact discharge, low leakage (<100 nA @ 16 V), and compatibility with high-frequency RF routing requiring minimal signal distortion.
Technical Context
The ESD7462N2T5G employs a silicon avalanche diode structure optimized for bi-directional transient suppression without DC bias dependency. Its capacitance remains stable from 0 V to 16 V reverse bias, enabling consistent RF impedance matching across operating voltage ranges.
Clamping behavior is characterized using both IEC 61000-4-2 waveform testing and TLP analysis (±8 A/±16 A pulses), delivering verified clamping voltages of ≤34 V and ≤47 V respectively - critical for protecting sensitive RF front-end components like LNAs and switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance @ 1 MHz | 0.30 pF typ - preserves RF signal integrity in 50 Ω systems up to 3 GHz |
| Clamping Voltage @ ±8 kV | ≤34 V (IEC 61000-4-2 contact) - limits voltage stress on downstream RF ICs |
| Reverse Working Voltage | 16 V - supports common RF bias rails and USB 2.0 signal swing |
| Leakage Current @ 16 V | <100 nA - avoids DC loading of high-impedance antenna paths |
| Insertion Loss @ 1 GHz | 0.05 dB - negligible RF power loss in antenna feed applications |
| ESD Rating | ±18 kV IEC 61000-4-2 contact - meets industrial and handheld device immunity requirements |
| Package | X2DFN2 (1.00 × 0.60 × 0.37 mm, 0.65 mm pitch) - enables placement adjacent to RF connectors and IC pads |
Pinout & Package
ESD7462N2T5G is housed in a 2-terminal X2DFN2 surface-mount package (Case 714AB), with no internal ground connection - terminals are symmetrical and interchangeable for bi-directional protection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bi-directional) | Connected in series with protected signal line; polarity agnostic due to symmetric avalanche structure |
| Terminal 2 | Anode/Cathode (bi-directional) | Completes ESD current path to GND via PCB trace; requires low-inductance layout to GND plane |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | Stable 0.25–0.55 pF range from 0–16 V reverse bias - maintains consistent impedance match in variable-bias RF paths |
| Ultra-low insertion loss | 0.05 dB @ 1 GHz - ensures >98.8% RF power transmission efficiency in antenna feed lines |
| Bi-directional clamping | Equal ±34 V clamping at ±8 kV IEC contact - protects against both positive and negative ESD transients without external bias |
| Low dynamic resistance | 1.6 Ω (TLP) - minimizes voltage overshoot during fast-rising ESD events (tr < 1 ns) |
| AEC-Q101 qualified variant available | SZESD7462N2T5G - supports automotive infotainment and telematics antenna protection with PPAP capability |
Applications
| Antenna Feed Line Protection | RF Switch / PA Output Protection |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi/GPS antenna ports in smartphones and IoT modules from user-handling ESD. IC Role / Device Role / Timing Role: Bi-directional shunt ESD clamp placed between antenna connector and RF switch input. Use Value: 0.3 pF capacitance prevents detuning of λ/4 matching networks; 0.05 dB loss preserves TRP/TIS metrics. | Use Scenario: Safeguarding output pins of RF power amplifiers and transmit/receive switches in multi-band front-end modules. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at PA output pad before matching network. Use Value: Clamps ±18 kV ESD spikes within 1 ns while adding <0.1 dB insertion loss - avoids gain compression or harmonic distortion. |
| NFC Antenna Interface | USB 2.0 High-Speed Data Lines |
Use Scenario: ESD protection for 13.56 MHz NFC loop antennas in payment terminals and access control readers. IC Role / Device Role / Timing Role: Series-connected shunt diode across differential NFC antenna traces. Use Value: Sub-0.4 pF capacitance ensures resonant frequency stability; ±13 kV ISO 10605 rating covers contact discharge in public-use devices. | Use Scenario: Protecting D+ and D− lines in portable USB peripherals where board space and signal fidelity are constrained. IC Role / Device Role / Timing Role: Dual-channel placement (one per line) with direct routing to chassis GND. Use Value: 16 V VRWM accommodates USB 2.0 common-mode swing; 0.10 dB loss @ 3 GHz supports eye diagram compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD7464N2T5G | 0.25 pF typ capacitance, 12 V VRWM, ±15 kV IEC rating | Better suited for lower-voltage RF paths (e.g., 5G sub-6 GHz LNA inputs) | Select when tighter capacitance spec (<0.28 pF) and lower clamping voltage are prioritized over 16 V working voltage headroom |
| CM1213A-03SO | 0.35 pF typ, 3.3 V VRWM, ±12 kV IEC rating, SOD-523 package | Targeted at low-voltage digital I/O (e.g., GPIO, SDIO), not RF signal lines | Choose only for non-RF, low-power digital interfaces where 16 V operation is unnecessary and SOD-523 footprint is preferred |
Compared with ESD7462N2T5G, ESD7464N2T5G offers lower capacitance but reduced voltage margin, while CM1213A-03SO trades RF suitability for compactness in digital-only contexts - making ESD7462N2T5G the optimal choice for 16 V-rated, high-frequency antenna and switch protection.
Availability
ESD7462N2T5G is available at Aetrix Electronics and suitable for RF antenna feed line protection, cellular front-end module design, and NFC interface hardening requiring stable component supply and full RoHS compliance.
Supply support for ESD7462N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7462N2T5G belongs to onsemi's Ultra-Low Capacitance ESD Protection Diode family, engineered specifically for preserving signal integrity in high-frequency RF signal paths while meeting stringent IEC/ISO immunity standards.
FAQ
What is the maximum working voltage supported by ESD7462N2T5G?
The ESD7462N2T5G has a specified reverse working voltage (VRWM) of 16 V, meaning it can continuously block up to 16 V in normal operation without conduction. This rating ensures compatibility with common RF bias rails and USB 2.0 signal swings. Exceeding this voltage risks premature breakdown or increased leakage, so ESD7462N2T5G must be applied within its 16 V limit in steady-state conditions.
Does ESD7462N2T5G require a DC bias to function as an ESD protector?
No, ESD7462N2T5G does not require DC bias - it is a bi-directional silicon avalanche diode with symmetrical terminal characteristics. Its clamping action activates automatically during ESD transients regardless of polarity or DC offset on the protected line. This makes ESD7462N2T5G ideal for AC-coupled RF paths such as antenna feeds and NFC loops where no DC reference is present.
How does the 0.3 pF capacitance of ESD7462N2T5G impact RF performance at 2.4 GHz?
At 2.4 GHz, the 0.3 pF typical junction capacitance of ESD7462N2T5G presents an impedance of ~220 Ω, which is high enough to avoid significant loading of 50 Ω RF traces. Measured insertion loss is 0.07 dB at 2.4 GHz - well within acceptable limits for antenna feed applications. This low capacitive reactance ensures minimal phase shift and return loss degradation, preserving TRP and TIS metrics in wireless handsets.
Can ESD7462N2T5G be used to protect USB 3.0 SuperSpeed differential pairs?
No, ESD7462N2T5G is not recommended for USB 3.0 SuperSpeed (5 Gbps) differential pairs. Its 0.3 pF capacitance and 0.10 dB insertion loss at 3 GHz are optimized for USB 2.0 (480 Mbps) and RF applications up to ~3 GHz. USB 3.0 requires sub-0.2 pF capacitance and <0.03 dB loss at 2.5 GHz to maintain eye diagram integrity - specifications met by dedicated high-speed USB 3.0 ESD arrays, not ESD7462N2T5G.
Is ESD7462N2T5G compliant with automotive qualification standards?
The base ESD7462N2T5G is not AEC-Q101 qualified; however, the pin-compatible SZESD7462N2T5G variant is fully AEC-Q101 qualified and PPAP capable. Both share identical electrical specs and X2DFN2 packaging, but only the SZ-prefix version undergoes automotive-grade stress testing and lot-level traceability. For automotive infotainment or telematics antenna protection, SZESD7462N2T5G - not ESD7462N2T5G - must be selected.
ESD7462N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- -
- Series:
- *
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- -
- Unidirectional Channels:
- -
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- -
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- -
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
ESD7462N2T5G FAQ
1.How can I place an order for ESD7462N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7462N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7462N2T5G reliable?
The price and inventory of ESD7462N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7462N2T5G is usually 5 days.
3.What payment methods are accepted for ESD7462N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7462N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7462N2T5G?
ESD7462N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7462N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7462N2T5G?
For technical support, including ESD7462N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7462N2T5G requirements.
6.How does Aetrix verify that ESD7462N2T5G is sourced from the original manufacturer or authorized distributors?
All ESD7462N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7462N2T5G meets industry standards.
7.What is the process for return or replacement of ESD7462N2T5G?
All ESD7462N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7462N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7462N2T5G part is unused and in its original packaging.
Return procedure for ESD7462N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7462N2T5G Tags
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ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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