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onsemi ESD7471N2T5G
- Part No.:
- ESD7471N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
ESD7471N2T5G.pdf
- Description:
- TVS DIODE 5.3VWM 2XDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,792
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Product details
Overview
ESD7471N2T5G from onsemi is a bi-directional ultra-low-capacitance TVS diode designed for ESD protection of RF signal paths in space-constrained wireless terminals. It delivers 0.35 pF max junction capacitance at 1 MHz, 5.3 V stand-off voltage, <1 nA reverse leakage at VRWM, 13–15 V clamping voltage at 1 A IPP, and IEC 61000-4-2 Level 4 (±8 kV contact) compliance - enabling robust antenna line and USB 2.0/3.0 interface protection.
For engineers reviewing the ESD7471N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss (<0.5 dB at 2.4 GHz), capacitance linearity over bias voltage, dynamic resistance (<0.8 Ω), thermal resistance (400 °C/W), and XDFN2 package compatibility with high-density RF layouts.
Technical Context
The ESD7471N2T5G implements a symmetric bi-directional TVS structure optimized for low-voltage, high-frequency signal lines. Its clamping behavior is characterized by TLP-tested IV curves showing turn-on near 7.0 V (VBR @ 1 mA) and stable sub-15 V clamping up to 1 A, with minimal voltage overshoot during IEC 61000-4-2 ±8 kV contact discharge.
Capacitance remains linear from 0 V to 6 V bias (0.24–0.35 pF), critical for maintaining RF impedance integrity in antenna front-end and NFC applications. The device operates across −55 °C to +150 °C and meets AEC-Q101 requirements when ordered as SZESD7471N2T5G.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.35 pF max @ 1 MHz, 0 V - preserves RF signal integrity in 2.4 GHz Wi-Fi/Bluetooth antenna paths |
| Stand-off Voltage (VRWM) | 5.3 V - compatible with 5 V and 3.3 V logic and RF IC supply rails without leakage-induced bias shift |
| Clamping Voltage (VC) | 15 V max @ 1 A IPP - limits transient voltage to safe levels for sensitive RF transceivers and switches |
| ESD Rating | IEC 61000-4-2 Level 4: ±8 kV contact / ±15 kV air - exceeds industrial and consumer handheld ESD immunity requirements |
| Dynamic Resistance (RDYN) | <0.8 Ω - ensures fast energy shunting and minimal voltage overshoot during nanosecond-scale ESD events |
| Leakage Current (IR) | <1 nA @ 5.3 V - prevents DC loading of high-impedance RF signal nodes and preserves receiver sensitivity |
| Package | XDFN2 (1.0 × 0.6 mm, 0.65 mm pitch) - enables placement directly at connector or IC pad with minimal parasitic inductance |
Pinout & Package
The ESD7471N2T5G is housed in an XDFN2 (Case 711AM) surface-mount package with two terminals: Pin 1 and Pin 2 form a symmetrical bi-directional TVS pair. No polarity marking; both pins are electrically identical and interchangeable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode/Cathode (bi-directional) | Connects to protected signal line; forms symmetrical clamp path with Pin 2 - no orientation dependency |
| Pin 2 | Anode/Cathode (bi-directional) | Completes bidirectional ESD current path; identical electrical role to Pin 1 - supports layout flexibility |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | 0.24–0.35 pF across 0–6 V bias - maintains consistent impedance matching in RF front-end switching networks |
| Ultra-low dynamic resistance | <0.8 Ω - minimizes clamping voltage rise under high-current ESD pulses, reducing stress on downstream ICs |
| RF insertion loss performance | <0.5 dB at 2.4 GHz - ensures negligible degradation of antenna efficiency and link budget in handset designs |
| AEC-Q101 qualification option | SZESD7471N2T5G variant available - supports automotive infotainment and telematics antenna protection with PPAP documentation |
Applications
| Antenna Line Protection | USB 2.0/3.0 Interface |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi antenna feedlines from ESD damage during user handling or connector mating. IC Role / Device Role / Timing Role: Bi-directional TVS clamp placed between antenna switch and transceiver RF port. Use Value: 0.35 pF capacitance and <0.5 dB insertion loss preserve radiation efficiency and TRP/TIS metrics while surviving ±8 kV contact discharge. | Use Scenario: Safeguarding high-speed differential data lanes (D+/D−) in mobile device USB ports against cable-discharge events. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted adjacent to USB connector to minimize stub inductance. Use Value: Sub-15 V clamping and <1 nA leakage prevent data corruption and ensure USB 2.0 eye diagram compliance under ESD stress. |
| NFC Antenna Protection | RF Switch Front-End |
Use Scenario: Shielding 13.56 MHz NFC loop antennas from electrostatic discharge during card-swipe or tap interactions. IC Role / Device Role / Timing Role: Series-connected ESD suppressor on antenna trace between matching network and NFC controller. Use Value: Linear CV response ensures stable 13.56 MHz resonance and Q-factor retention across operating voltage range. | Use Scenario: Protecting SPDT/SP4T RF switches used in multi-band LTE/Wi-Fi front-ends from ESD-induced gate oxide failure. IC Role / Device Role / Timing Role: Shunt protector on RF input/output ports to clamp transients before reaching GaAs or SOI switch FETs. Use Value: 7.0 V breakdown and 15 V clamping prevent latch-up and permanent degradation of switch isolation and insertion loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF typical capacitance, 5.5 V VRWM, 12 V VC @ 1 A, SOT-5X3 package (1.0 × 1.0 mm) | Higher capacitance limits use to lower-frequency interfaces (e.g., HDMI, audio); less suitable for 2.4 GHz antenna lines | Select when board space allows larger footprint and RF performance is secondary to cost or availability |
| UMK105CG470JV-F | MLCC-based ESD solution (47 pF, 25 V), not a TVS diode - relies on dielectric absorption rather than clamping | No defined clamping voltage; unsuitable for IEC 61000-4-2 Level 4 compliance; used only for low-energy static dissipation | Use only for non-critical, low-speed signal lines where standardized ESD testing is not required |
Compared with TPD2E001DRYR and UMK105CG470JV-F, the ESD7471N2T5G uniquely balances ultra-low capacitance, tight clamping, and full IEC 61000-4-2 Level 4 compliance in a 1.0 × 0.6 mm footprint - making it the preferred choice for RF-sensitive, space-constrained antenna and high-speed serial interface protection.
Availability
ESD7471N2T5G is available at Aetrix Electronics and suitable for RF antenna line protection, USB 2.0/3.0 interface hardening, NFC circuit safeguarding, and cellular front-end ESD mitigation requiring stable component supply and long-term lifecycle support.
Supply support for ESD7471N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and intelligent power systems.
The ESD7471N2T5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for ultra-low-capacitance transient suppression in high-frequency wireless signal paths - including antenna, RF switch, and high-speed data interfaces.
FAQ
What is the maximum clamping voltage of the ESD7471N2T5G under IEC 61000-4-2 stress?
The ESD7471N2T5G exhibits a maximum clamping voltage of 15 V when subjected to a 1 A peak pulse current (IPP), per IEC 61000-4-5 waveform conditions. This value is confirmed in the Electrical Characteristics table and validated via TLP testing. For the ESD7471N2T5G, this clamping level ensures downstream RF ICs remain within safe operating voltage margins during ±8 kV contact ESD events.
Is the ESD7471N2T5G suitable for 5 GHz Wi-Fi antenna protection?
Yes, the ESD7471N2T5G is validated for 5 GHz operation: its capacitance remains ≤0.35 pF up to 1 GHz (per datasheet Figure 12), and RF insertion loss is <0.5 dB at 2.4 GHz and <1.2 dB at 5 GHz (Figure 11). The device's linear CV behavior and low dynamic resistance make the ESD7471N2T5G appropriate for 5 GHz Wi-Fi 6/6E front-end protection when placed with minimal trace length.
Does the ESD7471N2T5G require orientation during PCB placement?
No - the ESD7471N2T5G is a symmetric bi-directional TVS diode with identical electrical characteristics between Pin 1 and Pin 2. There is no anode/cathode distinction or polarity marking; either terminal may connect to the protected signal line. This symmetry simplifies layout and eliminates orientation-related assembly errors for the ESD7471N2T5G.
What is the thermal resistance (RJA) of the ESD7471N2T5G in standard FR-4 layout?
The ESD7471N2T5G has a specified junction-to-ambient thermal resistance (RJA) of 400 °C/W when mounted on a standard FR-4 PCB using the recommended minimum pad size per datasheet Note 3. This value reflects typical thermal performance in compact handheld layouts and confirms the ESD7471N2T5G can safely dissipate transient energy without thermal runaway during repetitive ESD events.
How does the ESD7471N2T5G differ from the SZESD7471N2T5G variant?
The SZESD7471N2T5G is the automotive-grade version of the ESD7471N2T5G, qualified to AEC-Q101 and supported with PPAP documentation. Both share identical electrical specs and XDFN2 packaging, but the SZ prefix indicates enhanced process control, extended temperature validation (−55 °C to +150 °C), and traceability for automotive applications. The ESD7471N2T5G is intended for industrial and consumer use.
ESD7471N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.24pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-XDFN (1x0.6) (SOD-882)
ESD7471N2T5G FAQ
1.How can I place an order for ESD7471N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7471N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7471N2T5G reliable?
The price and inventory of ESD7471N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7471N2T5G is usually 5 days.
3.What payment methods are accepted for ESD7471N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7471N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7471N2T5G?
ESD7471N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7471N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7471N2T5G?
For technical support, including ESD7471N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7471N2T5G requirements.
6.How does Aetrix verify that ESD7471N2T5G is sourced from the original manufacturer or authorized distributors?
All ESD7471N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7471N2T5G meets industry standards.
7.What is the process for return or replacement of ESD7471N2T5G?
All ESD7471N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7471N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7471N2T5G part is unused and in its original packaging.
Return procedure for ESD7471N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7471N2T5G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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