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onsemi ESD7481MUT5G
- Part No.:
- ESD7481MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD7481MUT5G.pdf
- Description:
- TVS DIODE 3.3VWM 12VC 2X3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:24,047
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Product details
Overview
ESD7481MUT5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in X3DFN2 package, designed for RF signal lines requiring 3.3 V working voltage, 0.25 pF capacitance, and IEC61000-4-2 Level 4 (±20 kV contact) compliance. It protects antenna, USB 2.0 high-speed, and NFC interfaces with clamping voltage of 10 V at 1 A and dynamic resistance under 0.6 Ω.
For engineers reviewing the ESD7481MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include sub-0.3 pF junction capacitance, <1 ns response time, bi-directional clamping behavior, low leakage (<50 nA), and compatibility with space-constrained RF front-end layouts.
Technical Context
The ESD7481MUT5G implements a silicon avalanche diode structure optimized for transient suppression without parasitic degradation of high-frequency signal integrity. Its bi-directional configuration enables symmetric clamping across both polarities of ESD events, with breakdown voltage of 6.0 V (min) and stand-off voltage of 3.3 V.
Designed specifically for RF signal path protection, it maintains insertion loss below 0.030 dB at 1 MHz and 0.234 dB at 8.5 GHz, while delivering <1 ns response time and dynamic resistance of 0.60 Ω per TLP testing - critical for preserving impedance matching and minimizing distortion in antenna and PA output stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance | 0.25 pF @ 0 V, 1 MHz - preserves signal integrity in USB 2.0 and 5 GHz RF paths |
| Clamping Voltage | 10 V @ 1 A IPP - limits transient overvoltage to safe levels for downstream RF ICs |
| Stand-off Voltage | 3.3 V - matches common RF bias rail and logic I/O voltage domains |
| ESD Rating | ±20 kV contact per IEC61000-4-2 Level 4 - exceeds industrial and portable device requirements |
| Response Time | < 1 ns - engages before sensitive circuitry sustains damage during fast ESD transients |
| Dynamic Resistance | 0.60 Ω - minimizes voltage overshoot during high-current ESD pulses |
| Leakage Current | < 50 nA @ 3.3 V - avoids DC loading of high-impedance RF sensing or bias networks |
Pinout & Package
ESD7481MUT5G is housed in the X3DFN2 (Case 152AF) package: 0.60 mm × 0.30 mm body outline, 0.3 mm height, with two terminals and no exposed pad. The package supports automated placement and reflow soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to protected line; forms anode-to-cathode path for negative transients |
| 2 | Anode | Connected to protected line; forms cathode-to-anode path for positive transients |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.25 pF enables use in 480 Mbps USB 2.0 and multi-GHz antenna feeds without signal attenuation |
| Bi-directional clamping | Symmetric IV curve ensures equal protection against ±ESD events on single-ended RF traces |
| Low dynamic resistance | 0.60 Ω reduces clamping voltage overshoot during 30 A TLP pulses, improving system robustness |
| Small footprint | 0.60 mm × 0.30 mm area saves board space in compact mobile and IoT RF modules |
| AEC-Q101 qualified | SZ prefix variant available; this ESD7481MUT5G meets automotive reliability stress test requirements |
Applications
| Antenna Line Protection | USB 2.0 High-Speed Interface |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi/GNSS antenna feedlines from human-body-model ESD events during handling or operation. IC Role / Device Role / Timing Role: Bi-directional transient voltage suppressor placed in series with RF trace between antenna switch and transceiver. Use Value: 0.25 pF capacitance avoids detuning of λ/4 matching networks; 10 V clamping prevents LNA saturation or permanent damage. | Use Scenario: Safeguarding D+ and D− differential pairs in portable devices against electrostatic discharge during cable insertion. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted adjacent to USB connector, grounded via shortest possible path. Use Value: Sub-0.3 pF loading preserves eye diagram integrity at 480 Mbps; <1 ns response prevents bit errors during contact discharge. |
| NFC Antenna Interface | RF Front-End Switch Protection |
Use Scenario: Shielding 13.56 MHz NFC loop antennas and matching circuits from ESD induced by user proximity or touch. IC Role / Device Role / Timing Role: Series-connected ESD clamp on antenna feedline, placed before matching capacitor to avoid Q-factor degradation. Use Value: 0.25 pF capacitance introduces negligible phase shift at 13.56 MHz; 3.3 V stand-off avoids DC bias interference. | Use Scenario: Protecting SPDT/SP4T RF switches in smartphone diversity receive chains from ESD during antenna switching or user interaction. IC Role / Device Role / Timing Role: Shunt protector across RF input/output ports of GaAs or SOI switches to clamp transients before internal FET gates. Use Value: 0.60 Ω dynamic resistance ensures clamping voltage stays below 12 V even at 3 A peak current, preventing gate oxide rupture. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance, 5.5 V stand-off, unidirectional configuration | Better suited for low-voltage I²C or GPIO lines; not recommended for >1 GHz RF paths | Select when lower clamping voltage (7 V @ 1 A) is prioritized over RF bandwidth preservation |
| UMK105CG220JV-F | Ceramic multilayer varistor (MLV); 22 pF typical capacitance, higher leakage | Used in power rail or low-frequency signal protection; unsuitable for high-speed data or RF | Choose only for cost-sensitive non-RF applications where sub-pF capacitance is not required |
Compared with TPD2E001DRYR and UMK105CG220JV-F, the ESD7481MUT5G uniquely balances ultra-low capacitance (0.25 pF), bi-directional operation, and 3.3 V stand-off - making it the only viable option for antenna feedline and USB 2.0 differential pair protection where signal fidelity and ESD immunity must coexist.
Availability
ESD7481MUT5G is available at Aetrix Electronics and suitable for RF front-end modules, USB 2.0 interface designs, and NFC antenna systems requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for ESD7481MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The ESD7481MUT5G belongs to onsemi's Micro-Packaged Diodes for ESD Protection product line, engineered specifically for ultra-high-frequency signal path protection where minimal parasitic capacitance and fast transient response are mandatory.
FAQ
What is the maximum operating temperature range for ESD7481MUT5G?
The ESD7481MUT5G is rated for junction and storage temperatures from −40 °C to +125 °C. This range supports deployment in automotive cabin modules, industrial wireless sensors, and consumer handheld devices exposed to ambient thermal cycling. The device maintains specified clamping voltage and leakage performance across this full range, as validated per onsemi's thermal characterization protocols.
Does ESD7481MUT5G support IEC61000-4-2 Level 4 ESD protection?
Yes, the ESD7481MUT5G is certified for IEC61000-4-2 Level 4: ±20 kV contact discharge and ±20 kV air discharge. This rating is confirmed in the official datasheet (Rev. 10, February 2024) and verified through onsemi's accredited ESD test lab using calibrated ESD guns and oscilloscope-based waveform capture per Figure 1 and Figure 2.
Is ESD7481MUT5G unidirectional or bi-directional?
The ESD7481MUT5G is a bi-directional ESD protection diode. Its symmetrical IV characteristics - with identical breakdown and clamping behavior for both positive and negative transients - are documented in Figures 7 and 8 of the datasheet. This allows single-device protection of AC-coupled or floating RF signal lines without polarity constraints.
What is the package type and dimensions of ESD7481MUT5G?
The ESD7481MUT5G uses the X3DFN2 package (Case 152AF), measuring 0.60 mm × 0.30 mm in footprint and 0.3 mm in height. Mechanical drawings confirm terminal pitch of 0.35 mm and conform to JEDEC MO-252 standards. This ultra-compact size enables placement directly at USB connectors or antenna feedpoints with minimal PCB real estate.
Can ESD7481MUT5G be used for USB 3.0 or USB-C applications?
No, the ESD7481MUT5G is not recommended for USB 3.0 SuperSpeed (5 Gbps) or USB-C alternate mode applications. Its 0.25 pF capacitance is optimized for USB 2.0 (480 Mbps) and sub-6 GHz RF signals, but insufficient for the tighter impedance and bandwidth requirements of USB 3.x differential pairs. For those interfaces, onsemi's ESD7L5.0D or NUP4201MR6T1 are better matched.
ESD7481MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 6V (Typ)
- Voltage - Clamping (Max) @ Ipp:
- 12V
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.25pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD7481MUT5G FAQ
1.How can I place an order for ESD7481MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7481MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7481MUT5G reliable?
The price and inventory of ESD7481MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7481MUT5G is usually 5 days.
3.What payment methods are accepted for ESD7481MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7481MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7481MUT5G?
ESD7481MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7481MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7481MUT5G?
For technical support, including ESD7481MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7481MUT5G requirements.
6.How does Aetrix verify that ESD7481MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD7481MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7481MUT5G meets industry standards.
7.What is the process for return or replacement of ESD7481MUT5G?
All ESD7481MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7481MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7481MUT5G part is unused and in its original packaging.
Return procedure for ESD7481MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7481MUT5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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