onsemi ESD7501MUT5G
- Part No.:
- ESD7501MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD7501MUT5G.pdf
- Description:
- TVS DIODE 5VWM 11.5VC 2X3DFN
- Quantity:
- Payment:

- Shipping:

Inventory:8,177
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESD7501MUT5G from onsemi is a bi-directional ESD protection diode in X3DFN2 package, featuring 0.45 pF typical junction capacitance, 5 V stand-off voltage, 8.4–9.5 V clamping voltage at 0.5–1.0 A IPP, and IEC 61000-4-2 Level 4 (±16 kV contact) compliance - optimized for high-speed USB 2.0 data lines.
For engineers reviewing the ESD7501MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, sub-10 V clamping under 1 A transients, bi-directional symmetry, and 0.60 mm × 0.30 mm footprint for space-constrained interfaces.
Technical Context
The ESD7501MUT5G implements a symmetric bi-directional TVS structure with matched anode-cathode clamping behavior, enabling robust ±8 kV IEC 61000-4-2 ESD suppression on differential or single-ended high-frequency signal paths. Its low dynamic resistance (0.28–0.42 Ω) ensures rapid voltage limiting during fast-rising ESD events.
Designed specifically for <5 V rail protection, it maintains stable reverse leakage (<1.0 µA at 5 V) and exhibits flat capacitance response up to 1 GHz (0.45–0.75 pF), minimizing insertion loss (<0.08 dB @ 1 GHz) critical for USB 2.0 eye diagram integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (CJ) | 0.45 pF typ @ 0 V, 1 MHz - preserves signal rise time & minimizes distortion on USB 2.0 high-speed (480 Mbps) lines |
| Clamping Voltage (VC) | 8.4 V @ 0.5 A, 9.5 V @ 1.0 A (8/20 µs) - limits transient overvoltage below IC damage thresholds |
| Stand-off Voltage (VRWM) | 5.0 V - matches standard USB 2.0 VBUS and data line DC bias without leakage or conduction |
| ESD Rating | ±16 kV contact per IEC 61000-4-2 Level 4 - exceeds industrial and consumer system-level immunity requirements |
| Package Size | 0.60 mm × 0.30 mm × 0.30 mm - enables placement directly at connector or IC pad with minimal trace stub |
| Dynamic Resistance | 0.28 Ω (Pin1→2), 0.42 Ω (Pin2→1) - ensures consistent clamping performance regardless of ESD polarity |
Pinout & Package
X3DFN2 (Case 152AF) is a 2-terminal, bottom-terminated, leadless micro-package with 0.35 mm pitch, 0.62 mm × 0.32 mm body outline, and 0.24 mm max height - optimized for automated placement and high-density routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode (for conventional forward bias) | Bi-directional terminal - functions as cathode when Pin 2 is positive; clamps positive transients to VCC or ground depending on circuit topology |
| Pin 2 | Anode (for conventional forward bias) | Bi-directional terminal - functions as anode when Pin 1 is positive; clamps negative transients symmetrically with Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.45 pF typ - avoids signal degradation and timing skew on 480 Mbps USB 2.0 differential pairs |
| Bi-directional clamping | Matched VC ≤9.5 V for ±1 A pulses - protects both polarities of transient without external biasing |
| Miniature footprint | 0.60 mm × 0.30 mm - fits within 0.5 mm clearance zones near USB connectors or SoC I/O pads |
| Low dynamic resistance | 0.28–0.42 Ω - reduces voltage overshoot during sub-nanosecond ESD rise times (tR < 1 ns) |
Applications
| USB 2.0 High-Speed Interface | MHL 2.0 Link Protection |
|---|---|
Use Scenario: ESD protection on D+ and D− lines of USB 2.0 host/device ports exposed to user-handling events. IC Role / Device Role / Timing Role: Bi-directional transient voltage suppressor placed between connector and PHY, operating passively with zero latency. Use Value: Maintains <0.5 dB insertion loss at 480 MHz while clamping ±16 kV ESD to <9.5 V - preserving eye opening and bit error rate. | Use Scenario: Protecting MHL 2.0 TMDS channels (up to 3 Gbps) in mobile-to-display docking solutions. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp on each differential pair, placed immediately adjacent to the MHL controller's output pins. Use Value: 0.45 pF capacitance prevents signal integrity loss across 1.5 GHz fundamental frequency - enabling full bandwidth compliance. |
| eSATA Data Lines | Mobile Display Serial Interface |
Use Scenario: Shielding eSATA Gen II (3 Gbps) TX/RX pairs from connector-based ESD in external storage enclosures. IC Role / Device Role / Timing Role: Standalone ESD suppressor mounted at the eSATA receptacle, referenced to chassis ground. Use Value: 5 V VRWM aligns with eSATA common-mode voltage range; 8.4 V VC at 0.5 A prevents PHY latch-up during hot-plug events. | Use Scenario: Protecting MIPI D-PHY or LVDS display serial links in smartphones and tablets against I/O port ESD. IC Role / Device Role / Timing Role: Per-lane ESD clamp on source-synchronous clock and data lanes, placed before EMI filters. Use Value: Sub-10 V clamping and 0.3 mm height allow integration beneath narrow-bezel display flex cables without mechanical interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF typical capacitance; 12 V clamping at 1 A; SOT-5X3 (1.0 mm × 0.6 mm) | Larger footprint; higher capacitance limits use to lower-speed interfaces (e.g., UART, I²C) | Select when board space permits larger package and USB 2.0 speed is not required. |
| SP1001-01UTG | 0.35 pF typical capacitance; 10.5 V clamping at 1 A; 0.6 mm × 0.3 mm uDFN | Slightly lower capacitance but higher clamping voltage; RoHS-compliant but not halogen-free | Prefer where sub-0.4 pF is mandatory and 10.5 V VC remains within system margin. |
Compared with TPD2E001DRYR and SP1001-01UTG, the ESD7501MUT5G delivers the optimal balance of ultra-low capacitance (0.45 pF), tight clamping (≤9.5 V), and minimal footprint (0.60 × 0.30 mm) - making it the preferred choice for space- and signal-integrity-critical USB 2.0 implementations.
Availability
ESD7501MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, MHL 2.0 link safeguarding, and eSATA Gen II data line shielding requiring stable component supply and long-term production continuity.
Supply support for ESD7501MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7501MUT5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for high-frequency digital interfaces where low capacitance, fast response, and minimal board area are non-negotiable design constraints.
FAQ
What is the maximum clamping voltage of the ESD7501MUT5G under IEC 61000-4-2 ESD stress?
The ESD7501MUT5G clamps to ≤9.5 V at 1.0 A peak pulse current (8/20 µs waveform), as specified in its Electrical Characteristics table. This value is measured per IEC 61000-4-2 test conditions and reflects worst-case voltage seen by protected circuitry during ±16 kV contact discharge events. The ESD7501MUT5G achieves this with symmetric bi-directional behavior and low dynamic resistance.
Does the ESD7501MUT5G require external biasing or control signals to operate?
No, the ESD7501MUT5G is a passive, bi-directional TVS diode that requires no external bias, power, or control signals. It operates solely based on voltage threshold - conducting only during transient overvoltage events exceeding its 5.0 V stand-off rating. Its zero-bias operation makes integration simple and reliable across all USB 2.0, MHL 2.0, and eSATA designs using the ESD7501MUT5G.
What is the junction capacitance of the ESD7501MUT5G at 1 GHz, and how does it affect USB 2.0 performance?
The ESD7501MUT5G exhibits 0.45–0.75 pF junction capacitance at 1 MHz, and maintains flat response up to 1 GHz per Figure 6 in its datasheet. At 480 MHz (USB 2.0 fundamental), this results in <0.08 dB insertion loss (Figure 5), preserving signal integrity, eye opening, and jitter margin - confirming the ESD7501MUT5G is qualified for full-speed USB 2.0 channel compliance.
Is the ESD7501MUT5G compatible with lead-free reflow soldering processes?
Yes, the ESD7501MUT5G is Pb-free, halogen-free/BFR-free, and RoHS compliant. Its X3DFN2 package supports standard lead-free reflow profiles with a maximum lead solder temperature of 260 °C for 10 seconds, as stated in the Maximum Ratings table. This ensures compatibility with modern SMT assembly lines handling the ESD7501MUT5G.
How is the polarity marked on the ESD7501MUT5G package, and does polarity matter for ESD protection?
The ESD7501MUT5G uses a generic marking "XM" on Pin 1 side (cathode side per conventional diode symbol), but functions identically in either orientation due to its bi-directional design. Polarity assignment is provided for traceability only - the ESD7501MUT5G clamps symmetrically between Pin 1 and Pin 2 regardless of installation direction, eliminating orientation-dependent assembly errors.
ESD7501MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 11.5V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 0.45pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.62x0.32)
ESD7501MUT5G FAQ
1.How can I place an order for ESD7501MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7501MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7501MUT5G reliable?
The price and inventory of ESD7501MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7501MUT5G is usually 5 days.
3.What payment methods are accepted for ESD7501MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7501MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7501MUT5G?
ESD7501MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7501MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7501MUT5G?
For technical support, including ESD7501MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7501MUT5G requirements.
6.How does Aetrix verify that ESD7501MUT5G is sourced from the original manufacturer or authorized distributors?
All ESD7501MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7501MUT5G meets industry standards.
7.What is the process for return or replacement of ESD7501MUT5G?
All ESD7501MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7501MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7501MUT5G part is unused and in its original packaging.
Return procedure for ESD7501MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7501MUT5G Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

