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onsemi ESD7551N2T5G
- Part No.:
- ESD7551N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
ESD7551N2T5G.pdf
- Description:
- TVS DIODE 3.3VWM 13VC 2X2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:22,931
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Product details
Overview
ESD7551N2T5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in X2DFN2 package, featuring 0.35 pF max capacitance, 3.3 V stand-off voltage, and <1 ns response time - designed for high-frequency RF signal lines including USB 2.0 high-speed data and antenna interfaces.
For engineers reviewing the ESD7551N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 1 A (10 V), IEC 61000-4-2 Level 4 (±25 kV contact) compliance, low dynamic resistance (<2 Ω), and suitability for space-constrained RF front-end protection.
Technical Context
The ESD7551N2T5G employs a silicon avalanche diode structure optimized for bi-directional transient suppression with symmetrical IV characteristics. Its low junction capacitance (0.25 pF typ @ 0 V, 1 MHz) and minimal parasitic inductance enable minimal signal distortion in GHz-range RF paths.
It meets IEC 61000-4-2 Level 4 (±25 kV contact/air) and ISO 10605 (±30 kV, 150 pF/2 kΩ) standards, with clamping voltage specified at 10 V (IPP = 1 A) and 13 V (IPP = 3 A), ensuring robust protection without compromising RF integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance | 0.25 pF typical @ 0 V, 1 MHz - preserves signal integrity in USB 2.0 and 2.4 GHz antenna lines |
| Stand-off Voltage | 3.3 V - matches common I/O rail voltage, prevents leakage during normal operation |
| Clamping Voltage | 10 V @ 1 A IPP - limits transient overvoltage to safe levels for downstream RF ICs |
| ESD Rating | ±25 kV per IEC 61000-4-2 contact - exceeds industrial and portable device immunity requirements |
| Response Time | <1 ns - activates before sensitive circuitry sustains damage from fast ESD transients |
| Dynamic Resistance | 0.55 Ω typical - minimizes voltage overshoot during high-current ESD events |
Pinout & Package
ESD7551N2T5G uses the X2DFN2 (Case 714AB) surface-mount package: 1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch, wettable flank not applicable (standard variant). Cathode and anode terminals are arranged for compact bidirectional protection placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to protected line; forms one side of bi-directional clamping path |
| 2 | Anode | Connected to ground or reference plane; completes ESD current path during both polarity events |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.25 pF typical - enables use on 480 Mbps USB 2.0 differential pairs without insertion loss degradation |
| Bi-directional clamping | Symmetrical IV curve - protects against positive and negative ESD strikes without polarity dependency |
| Low leakage current | <1 nA @ 3.3 V - avoids DC loading on high-impedance RF bias networks |
| AEC-Q101 qualified variant available | SZESD7551N2T5G - supports automotive infotainment and telematics antenna protection |
Applications
| USB 2.0 High-Speed Data Lines | Cellular Antenna Feed Lines |
|---|---|
Use Scenario: Protecting D+ and D− pins of USB transceivers from human-body-model ESD events during plug/unplug cycles. IC Role / Device Role / Timing Role: Bi-directional transient voltage suppressor placed directly at connector interface. Use Value: 0.25 pF capacitance ensures <0.1 dB insertion loss at 480 MHz, preserving eye diagram integrity. |
Use Scenario: Shielding LTE/5G antenna switch and PA output nodes from ESD during handling and environmental exposure. IC Role / Device Role / Timing Role: Low-parasitic shunt protector between RF trace and ground, minimizing impedance discontinuity. Use Value: 10 V clamping at 1 A limits peak voltage below LNA input damage threshold (typically 12–15 V). |
| NFC Loop Antennas | Wi-Fi 2.4 GHz Front-End Modules |
Use Scenario: Safeguarding 13.56 MHz NFC reader coil connections against electrostatic discharge during card proximity events. IC Role / Device Role / Timing Role: Series-connected ESD clamp across differential antenna feed points. Use Value: Sub-0.35 pF capacitance avoids detuning of resonant loop impedance and maintains Q-factor >25. |
Use Scenario: Protecting Wi-Fi transceiver RFIO pins in compact IoT modules where board area is constrained. IC Role / Device Role / Timing Role: Standalone ESD diode mounted adjacent to RF switch output. Use Value: 0.65 mm pitch X2DFN2 footprint allows placement within 1 mm of RF pad, reducing stub inductance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD9B5.0ST5G | Unidirectional, 5.0 V VRWM, 0.45 pF max capacitance | Requires separate cathode-to-rail and anode-to-ground routing; higher capacitance limits use above 200 MHz | Select when protecting unidirectional DC-biased lines (e.g., GPIO with pull-up) and cost sensitivity outweighs RF performance |
| CM1213A-03SR | Tri-state ESD array (3-line), 0.6 pF max per line, 3.3 V VRWM | Integrated 3-channel solution; larger 1.6 mm × 1.0 mm package increases layout area vs. single-line ESD7551N2T5G | Choose for multi-line protection (e.g., USB ID/VBUS/D+/D−) where shared ground and reduced component count justify added capacitance |
Compared with ESD9B5.0ST5G and CM1213A-03SR, the ESD7551N2T5G delivers the lowest capacitance (0.25 pF) and smallest footprint (1.0 mm × 0.6 mm) for discrete bi-directional RF line protection - critical for 2.4 GHz+ antenna and high-speed serial interfaces where parasitic loading must be minimized.
Availability
ESD7551N2T5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, cellular antenna feed-line safeguarding, and NFC loop shielding requiring stable component supply and consistent parametric performance across production lots.
Supply support for ESD7551N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD7551N2T5G belongs to onsemi's Micro-Packaged Diodes for ESD Protection product line - engineered specifically for ultra-low-capacitance, high-frequency transient suppression in RF and high-speed digital signal paths.
FAQ
What is the maximum clamping voltage of ESD7551N2T5G under IEC 61000-4-2 ESD stress?
The ESD7551N2T5G exhibits a clamping voltage of 10 V at 1 A peak pulse current (IPP), measured per IEC 61000-4-2 waveform conditions. This value is confirmed in the Electrical Characteristics table of the official datasheet (Rev. 4, Feb 2024) and represents the maximum voltage seen across the device during a standardized ESD event - critical for ensuring downstream ICs remain within absolute maximum ratings. The ESD7551N2T5G maintains this performance consistently across its operating temperature range.
Does ESD7551N2T5G support bi-directional ESD protection?
Yes, the ESD7551N2T5G is explicitly designed as a bi-directional ESD protection diode, with symmetrical breakdown behavior between pins 1 and 2. Its IV curves (Figures 5 and 6 in the datasheet) confirm identical clamping performance for both positive and negative transients - essential for protecting AC-coupled or floating RF lines like antenna feeds and USB differential pairs. This eliminates the need for polarity-aware placement during PCB layout.
What is the junction capacitance of ESD7551N2T5G at 1 GHz?
The junction capacitance of ESD7551N2T5G is 0.22 pF at 1 GHz and 0 V bias, as specified in the Electrical Characteristics table (Rev. 4, Feb 2024). This ultra-low value - verified via CV characterization (Figure 4) - ensures minimal impact on signal integrity in 2.4 GHz Wi-Fi and LTE bands. The ESD7551N2T5G maintains sub-0.25 pF capacitance up to 3 GHz, making it suitable for next-generation RF front-end protection.
Is ESD7551N2T5G RoHS compliant and lead-free?
Yes, ESD7551N2T5G is Pb-free, halogen-free/BFR-free, and fully RoHS compliant, as stated in the Features section of the official datasheet. The "G" suffix in the part number explicitly denotes RoHS-compliant packaging. All manufacturing and plating processes for ESD7551N2T5G meet JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) requirements, supporting standard reflow profiles without special handling.
Can ESD7551N2T5G replace older ESD protection devices in existing USB 2.0 designs?
Yes, ESD7551N2T5G is a direct drop-in replacement for legacy ultra-low-capacitance ESD diodes in USB 2.0 designs due to its identical X2DFN2 footprint (1.00 mm × 0.60 mm), same pinout (pin 1 = cathode, pin 2 = anode), and improved specs: lower capacitance (0.25 pF vs. typical 0.4–0.6 pF), tighter clamping (10 V @ 1 A), and enhanced IEC 61000-4-2 rating (±25 kV). No PCB changes are required when upgrading to ESD7551N2T5G.
ESD7551N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5V
- Voltage - Clamping (Max) @ Ipp:
- 13V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.25pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X2DFN (1x0.6)
ESD7551N2T5G FAQ
1.How can I place an order for ESD7551N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD7551N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD7551N2T5G reliable?
The price and inventory of ESD7551N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD7551N2T5G is usually 5 days.
3.What payment methods are accepted for ESD7551N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD7551N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD7551N2T5G?
ESD7551N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD7551N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD7551N2T5G?
For technical support, including ESD7551N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD7551N2T5G requirements.
6.How does Aetrix verify that ESD7551N2T5G is sourced from the original manufacturer or authorized distributors?
All ESD7551N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD7551N2T5G meets industry standards.
7.What is the process for return or replacement of ESD7551N2T5G?
All ESD7551N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD7551N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD7551N2T5G part is unused and in its original packaging.
Return procedure for ESD7551N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD7551N2T5G Tags
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D12V0L1B2LP-7B
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