onsemi ESD7561N2T5G

Overview

ESD7561N2T5G from onsemi is a bi-directional TVS diode in X2DFN2 (SOD882) package, designed for ultra-low-capacitance ESD protection of RF signal paths. It delivers 0.3 pF typical junction capacitance at 0 V/1 MHz, 35 V clamping voltage at 8 A TLP, and ±18 kV IEC 61000-4-2 contact ESD immunity - making it suitable for antenna line and RF switch protection in 5G handsets.

For engineers reviewing the ESD7561N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include RF insertion loss (<0.05 dB @ 1 GHz), capacitance linearity over voltage, low leakage (<1 nA), and compatibility with high-speed USB 2.0/3.0 interfaces requiring minimal signal distortion.

Technical Context

The ESD7561N2T5G is a bi-directional transient voltage suppressor optimized for RF front-end protection. Its symmetrical I-V curve enables equal clamping in both polarities, with breakdown voltage of 16.5 V (min) at 1 mA and clamping voltages of 35 V (8 A) and 39 V (16 A) per TLP testing.

It operates with ultra-low dynamic capacitance (0.3 pF typ @ 0 V, 1 MHz) and maintains linearity across bias voltage - critical for preserving impedance matching and S-parameter integrity in 1–3 GHz antenna and PA signal paths. The device meets IEC 61000-4-2 Level 4 (±18 kV contact), IEC 61000-4-4 (40 A EFT), and ISO 10605 (±23 kV contact) standards.

Key Specifications

Pinout & Package

ESD7561N2T5G is housed in the X2DFN2 (SOD882) package: 1.00 mm × 0.60 mm × 0.37 mm, 0.65 mm pitch, two-terminal surface-mount device with exposed cathode pad for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7561N2T5G, ESD7562N2T5G trades 0.2 pF higher capacitance for marginally improved surge handling, while CM1213-04SO offers multi-line integration at the expense of RF performance - making ESD7561N2T5G the preferred choice for discrete, high-frequency signal line protection where sub-0.4 pF and <0.1 dB loss are mandatory.

Availability

ESD7561N2T5G is available at Aetrix Electronics and suitable for RF front-end design, 5G antenna module production, and high-speed USB peripheral manufacturing requiring stable component supply and full traceability.

Supply support for ESD7561N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.

The ESD7561N2T5G belongs to onsemi's Ultra-Low Capacitance ESD Protection Diode family, engineered specifically for RF signal integrity preservation in next-generation wireless handsets, base stations, and high-speed serial interfaces.

FAQ

What is the maximum working voltage rating for ESD7561N2T5G?

The ESD7561N2T5G has a maximum reverse working voltage (V_RWM) of 16 V, verified per datasheet conditions at T_A = 25°C. This allows safe continuous operation in 12 V and 15 V RF bias rails without leakage-induced distortion. Exceeding 16 V risks premature conduction and signal degradation. The ESD7561N2T5G must be applied within this limit to maintain its specified 0.3 pF capacitance and low insertion loss.

Does ESD7561N2T5G support bidirectional ESD protection?

Yes, ESD7561N2T5G is a bi-directional TVS diode with symmetrical I-V characteristics - confirmed by separate positive and negative TLP curves in the official datasheet. It clamps equally at +16.5 V and −16.5 V (min V_BR), enabling use on AC-coupled RF lines without polarity concerns. This symmetry is essential for protecting differential antenna feeds and balanced NFC loops, and is intrinsic to the ESD7561N2T5G device structure.

What is the insertion loss of ESD7561N2T5G at 2.4 GHz?

The ESD7561N2T5G exhibits 0.12 dB insertion loss at 2.4 GHz, interpolated from the datasheet's measured S21 plot (Figure 3) showing 0.05 dB @ 1 GHz and 0.21 dB @ 3 GHz. This value reflects real-world RF transmission efficiency in Wi-Fi 2.4 GHz band applications. The ESD7561N2T5G's ultra-low capacitance and optimized package parasitics ensure minimal amplitude attenuation - critical for maintaining link budget in compact wireless modules.

Is ESD7561N2T5G RoHS compliant and halogen-free?

Yes, ESD7561N2T5G is Pb-free, halogen-free/BFR-free, and fully RoHS compliant per the manufacturer's declaration in the datasheet (Rev. 0, February 2016). It meets EU Directive 2011/65/EU and subsequent amendments. The "G" suffix in ESD7561N2T5G explicitly denotes lead-free packaging. This compliance applies to the entire device - die, bond wires, mold compound, and X2DFN2 leadframe - with full material declarations available upon request for ESD7561N2T5G.

How does ESD7561N2T5G compare to standard 0402 TVS diodes in RF applications?

Standard 0402 TVS diodes typically exhibit ≥0.8 pF capacitance and >0.5 dB insertion loss at 1 GHz - degrading antenna efficiency and causing passband ripple. In contrast, ESD7561N2T5G achieves 0.3 pF and 0.05 dB at 1 GHz due to its X2DFN2 geometry and optimized junction design. This makes ESD7561N2T5G uniquely suited for RF signal lines where conventional TVS devices would detune matching networks or reduce receiver sensitivity - a distinction validated in onsemi's application notes for cellular front-end protection.