onsemi ESD7571N2T5G

Overview

ESD7571N2T5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in X2DFN2 package, designed for RF signal line protection with 0.35 pF max capacitance, 5.3 V stand-off voltage, and ±8 kV IEC 61000-4-2 contact ESD rating. It serves as primary transient suppression on antenna, USB 2.0/3.0, and NFC signal paths where board space and RF integrity are critical.

For engineers reviewing the ESD7571N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 1 A (13–15 V), dynamic resistance (< 0.8 Ω), junction capacitance linearity over bias, insertion loss < −0.5 dB up to 2.5 GHz, and compatibility with automated optical inspection in high-volume RF module assembly.

Technical Context

The ESD7571N2T5G employs a silicon avalanche diode structure optimized for bi-directional clamping with symmetrical IV characteristics. Its low dynamic resistance (< 0.8 Ω) and fast response time ensure effective voltage limiting during sub-nanosecond ESD transients per IEC 61000-4-2.

Capacitance remains stable across reverse bias (0.24–0.35 pF from 0 V to 5.3 V at 1 MHz), enabling minimal RF signal distortion in antenna front-end and switch path applications. The device meets AEC-Q101 requirements and supports wettable flank variants for enhanced solder-joint inspection.

Key Specifications

Pinout & Package

ESD7571N2T5G is housed in a 1.00 mm × 0.60 mm × 0.37 mm X2DFN2 (Case 714AB) surface-mount package with two terminals. The package features a wettable flank option (in SZ variant) but ESD7571N2T5G uses standard side-wettable leads compatible with reflow and AOI.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD7571N2T5G, the MXWT5G variant offers identical protection performance with enhanced process control for solder-joint inspection, while CM1213A-04SO trades RF fidelity for broader availability and lower unit cost in non-high-frequency designs.

Availability

ESD7571N2T5G is available at Aetrix Electronics and suitable for RF front-end modules, smartphone antenna systems, and high-speed interface protection requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for ESD7571N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The ESD7571N2T5G belongs to onsemi's Micro-Packaged ESD Protection Diode family, engineered specifically for ultra-low-capacitance transient suppression in RF and high-speed digital signal paths.

FAQ

What is the maximum clamping voltage of ESD7571N2T5G under IEC 61000-4-2 conditions?

The ESD7571N2T5G exhibits a clamping voltage of 13–15 V when subjected to a 1 A TLP pulse, which correlates to ±8 kV contact discharge per IEC 61000-4-2. This value is measured across the device terminals during the peak of the ESD event and reflects its ability to limit voltage stress on protected circuitry. The ESD7571N2T5G achieves this with sub-nanosecond response and low dynamic resistance, making it suitable for sensitive RF components.

Does ESD7571N2T5G support bi-directional ESD protection?

Yes, ESD7571N2T5G is a bi-directional ESD protection diode with symmetrical breakdown voltage (7.0 V minimum at 1 mA in both directions) and matched clamping behavior. Its pinout has no anode/cathode designation - either terminal may connect to the protected signal line and the other to ground. This eliminates orientation constraints during PCB layout and simplifies routing in differential or AC-coupled RF paths.

What is the junction capacitance of ESD7571N2T5G at 1 GHz?

The junction capacitance of ESD7571N2T5G is specified as 0.24–0.35 pF at 0 V bias and 1 MHz, and remains stable at 0.24–0.35 pF at 1 GHz per the datasheet CV curves. This frequency-invariant low capacitance enables use in 5G NR sub-6 GHz front-end designs without degrading return loss or group delay. The ESD7571N2T5G's capacitance linearity over voltage further ensures predictable impedance matching across operating conditions.

Is ESD7571N2T5G compliant with automotive qualification standards?

The ESD7571N2T5G itself is not AEC-Q101 qualified; however, the SZESD7571N2T5G variant (same die, marked with "SZ" prefix) is AEC-Q101 qualified and PPAP capable. Both share identical electrical specifications and package dimensions. For automotive applications requiring formal qualification, engineers should specify SZESD7571N2T5G - the ESD7571N2T5G is intended for industrial and consumer-grade RF systems.

Can ESD7571N2T5G be used on USB 3.0 SuperSpeed differential pairs?

Yes, ESD7571N2T5G is suitable for USB 3.0 SuperSpeed (5 Gbps) differential pair protection due to its 0.35 pF max capacitance, low insertion loss (< −0.5 dB at 2.5 GHz), and symmetrical bi-directional clamping. When placed as a shunt device adjacent to the connector, it preserves signal integrity without violating USB 3.0 jitter or eye diagram requirements. Layout must maintain controlled 90 Ω differential impedance and minimize stub length to avoid resonance - the ESD7571N2T5G's compact X2DFN2 footprint supports this constraint.