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onsemi ESD8018MUTAG
- Part No.:
- ESD8018MUTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- -
- Datasheet:
-
ESD8018MUTAG.pdf
- Description:
- TRANSISTOR VOLTAGE SUPPRESSOR DI
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Inventory:983,104
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Product details
Overview
ESD8018MUTAG from onsemi is a low-capacitance, quad-channel ESD protection diode array designed for high-speed differential data lines including V-by-One HS, LVDS, USB 3.1 Type-C, and 10 GbE interfaces. It features 0.32 pF max junction capacitance (I/O to GND), 3.3 V reverse working voltage, 4.8 V clamping voltage at 5 A (8/20 µs), ±17 kV IEC 61000-4-2 contact ESD rating, and UDFN10 3.2×1.2 mm package with flow-through pinout.
For engineers reviewing the ESD8018MUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, latch-up-free operation in LVDS/USB 3.1/V-by-One HS, IEC 61000-4-2 Level 4 compliance, and matched trace routing support via its symmetric I/O–GND–GND–I/O layout.
Technical Context
The ESD8018MUTAG implements a snap-back SCR-based protection structure optimized for high-speed serial interfaces. Its 0.44 Ω dynamic resistance and 1.19 V holding voltage enable fast turn-on and low-voltage clamping during ESD transients up to 5 A (8/20 µs).
Designed specifically for differential signaling, it supports four independent I/O channels referenced to common GND, with no internal channel-to-channel coupling. The device is characterized for RF insertion loss ≤0.451 dB at 5.562 GHz (3rd harmonic of V-by-One HS) and ≤5.0 dB at 15 GHz (4th harmonic of USB 3.1), confirming suitability for multi-Gbps data lanes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 3.3 V - Ensures compatibility with 3.3 V I/O rails without leakage or conduction during normal operation. |
| Junction Capacitance | 0.32 pF max (1 MHz, I/O–GND) - Minimizes signal distortion and impedance mismatch on >5 Gb/s differential links. |
| Clamping Voltage | 4.8 V @ 5 A (8/20 µs) - Limits transient overvoltage to safe levels for downstream 3.3 V logic and PHY receivers. |
| ESD Rating | ±17 kV contact per IEC 61000-4-2 Level 4 - Meets industrial and automotive ESD immunity requirements. |
| Dynamic Resistance | 0.44 Ω (I/O→GND) - Enables rapid voltage clamping with minimal IR drop during high-current ESD events. |
| Operating Temperature | −55 °C to +125 °C - Supports deployment in extended-temperature industrial and automotive environments. |
Pinout & Package
ESD8018MUTAG is housed in a 10-pin UDFN package (Case 517CY, 3.2×1.2 mm, 0.5 mm pitch) with wettable flank terminals for automated optical inspection. The flow-through layout enables symmetrical PCB trace routing for differential pairs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | I/O Channel 1 | Protected high-speed data line input/output; connects directly to connector-facing side of AC coupling capacitor in USB 3.1 layouts. |
| 2 | GND | Common cathode reference; minimum one connection required; placed adjacent to pins 1 and 3 for low-inductance return path. |
| 3 | I/O Channel 2 | Second protected lane; paired with Pin 1 for differential TX/RX routing with matched length and impedance. |
| 4 | I/O Channel 3 | Third protected lane; positioned to align with differential pair routing on V-by-One HS or LVDS interface layouts. |
| 5 | GND | Dedicated ground terminal; enables dual-GND configuration to reduce shared-impedance coupling between channels. |
| 6 | I/O Channel 4 | Fourth protected lane; completes quad-channel protection set for full-lane interfaces like 4-lane V-by-One HS. |
| 7–10 | I/O Channels 5–8 | Not applicable - ESD8018MUTAG has only four I/O channels; pins 7–10 are not assigned per datasheet Figure 1 and pin schematic. |
Key Features
| Feature | Design Value |
|---|---|
| Latch-up free operation | Validated for V-by-One HS, LVDS, DisplayPort, and USB 3.1 SuperSpeed - eliminates risk of destructive DC latch-up during normal signaling. |
| Flow-through package layout | Enables straight-through trace routing with matched lengths across differential pairs - preserves 100 Ω differential impedance and minimizes skew. |
| Ultra-low RF insertion loss | ≤0.451 dB at 5.562 GHz (V-by-One HS 3rd harmonic) - ensures <0.5% signal attenuation in full-HD 240 Hz timing-critical displays. |
| Pb-free, RoHS-compliant construction | Meets J-STD-609 Category 1 moisture sensitivity level (MSL3) and 260 °C reflow tolerance - supports standard SMT assembly processes. |
Applications
| V-by-One HS Display Interface | USB 3.1 Type-C Data Lanes |
|---|---|
Use Scenario: Protecting 8-lane V-by-One HS links between timing controller (TCON) and LCD panel in high-refresh-rate industrial displays. IC Role / Device Role / Timing Role: Per-lane ESD clamp placed immediately after board-edge connector, before AC coupling caps, to suppress ±15 kV air discharge transients. Use Value: 0.32 pF capacitance prevents rise-time degradation of 3.71 GHz fundamental signals, maintaining eye diagram integrity at 240 Hz full-HD. | Use Scenario: Safeguarding TX+/TX− and RX+/RX− differential pairs in USB 3.1 Gen 2 (10 Gb/s) host/device ports with Type-C connectors. IC Role / Device Role / Timing Role: Quad-channel bidirectional clamp installed between AC coupling capacitors and connector, blocking DC path to prevent latch-up. Use Value: 4.8 V clamping at 5 A ensures downstream PHY ICs remain below absolute maximum ratings during IEC 61000-4-2 contact discharge. |
| LVDS Camera Interface | 10 Gigabit Ethernet PHY |
Use Scenario: Shielding 4-lane LVDS video streams from ESD in machine vision cameras operating in factory-floor environments. IC Role / Device Role / Timing Role: Four independent I/O–GND paths protect parallel LVDS clock and data lanes, with GND pins placed to minimize loop inductance. Use Value: 1.19 V holding voltage guarantees no forward conduction during 1.2 V LVDS common-mode swing, preserving DC bias stability. | Use Scenario: Securing SFP+ or XAUI 10 GbE PHY interfaces against ESD in telecom switches and network appliances. IC Role / Device Role / Timing Role: High-frequency transient suppressor placed at board edge, leveraging 0.44 Ω RDYN to clamp sub-10 ns ESD spikes before reaching magnetics or PHY. Use Value: 0.25 pF capacitance at 2.5 GHz ensures <0.1 dB insertion loss - critical for maintaining IEEE 802.3ae jitter and BER compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD8016MUTAG | Same UDFN10 package; 0.25 pF capacitance; 3.3 V VRWM; 4.5 V VC @ 5 A; rated for DisplayPort and USB 3.1. | Optimized for DisplayPort 1.4 (5.4 Gb/s) with tighter 0.25 pF spec; identical latch-up behavior in USB 3.1. | Select ESD8016MUTAG when lower capacitance is prioritized for >5.4 Gb/s links; otherwise ESD8018MUTAG offers broader V-by-One HS validation. |
| TPD4E004DRYR | 4-channel, 0.8 pF typical capacitance; 3.6 V VRWM; 12 V VC @ 4 A; SOT-563 package; higher clamping voltage. | Targeted at general-purpose USB 2.0/LVDS; not validated for latch-up-free operation in USB 3.1 or V-by-One HS. | Use TPD4E004DRYR only in cost-sensitive, lower-speed (<1 Gb/s) designs where 0.8 pF capacitance is acceptable and latch-up risk is mitigated by system-level design. |
Compared with ESD8016MUTAG and TPD4E004DRYR, ESD8018MUTAG delivers the lowest verified clamping voltage (4.8 V) and most comprehensive high-speed interface qualification - including explicit V-by-One HS and USB 3.1 Type-C layout guidance, making it the preferred choice for >5 Gb/s differential systems requiring guaranteed latch-up immunity.
Availability
ESD8018MUTAG is available at Aetrix Electronics and suitable for V-by-One HS display modules, USB 3.1 Type-C docking stations, and 10 GbE networking equipment requiring stable component supply and long-term production continuity.
Supply support for ESD8018MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD8000 series, including ESD8018MUTAG, was engineered specifically for high-speed serial interface protection - balancing ultra-low capacitance, low clamping voltage, and latch-up immunity to meet stringent signal integrity and reliability demands of modern display and data connectivity standards.
FAQ
What is the maximum clamping voltage of ESD8018MUTAG under IEC 61000-4-2 Level 4 ESD stress?
The ESD8018MUTAG exhibits a clamping voltage of 4.8 V at 5 A (8/20 µs pulse), which corresponds to IEC 61000-4-2 Level 4 contact discharge (±8 kV). This value is measured per the test setup defined in Application Note AND8307/D and confirmed in Figures 2–3 of the official datasheet. The 4.8 V clamping ensures downstream 3.3 V ICs remain within safe operating limits during worst-case ESD events. ESD8018MUTAG's low dynamic resistance (0.44 Ω) contributes directly to this performance.
Is ESD8018MUTAG suitable for HDMI 1.4/1.3a TMDS interfaces?
No, ESD8018MUTAG is not recommended for HDMI 1.4/1.3a TMDS applications due to latch-up risk. The datasheet explicitly states "ESD8018 should not be used for HDMI applications" and identifies ESD8040 as the qualified alternative. This limitation arises from load-line intersection analysis showing dual stable operating points under HDMI's electrical conditions. ESD8018MUTAG is validated only for latch-up-free use in V-by-One HS, LVDS, DisplayPort, and USB 3.1 SS. Always consult Table 1 and Figure 18 in the ESD8018MUTAG datasheet for interface-specific guidance.
What is the junction capacitance of ESD8018MUTAG at 5.0 GHz, and why does it matter for USB 3.1?
The junction capacitance of ESD8018MUTAG is 0.25 pF at 5.0 GHz (I/O to GND), as specified in the Electrical Characteristics table. For USB 3.1 Gen 2 (10 Gb/s), the fundamental frequency is 5.0 GHz, and the third harmonic reaches 15 GHz. At 5.0 GHz, 0.25 pF introduces negligible reactance (~127 Ω), minimizing signal reflection and insertion loss - critical for maintaining eye height and jitter budgets. This value is confirmed in Figure 12 and Table 1 of the datasheet, where ESD8018MUTAG shows 0.240 dB loss at 5.0 GHz, supporting clean 10 Gb/s link operation.
Does ESD8018MUTAG require both GND pins (Pins 2 and 5) to be connected for proper operation?
ESD8018MUTAG requires only a minimum of one GND connection (e.g., Pin 2 or Pin 5) for functional ESD protection, as stated in the Pin Configuration note: "Common GND − Only Minimum of 1 GND connection required." However, connecting both GND pins reduces shared-impedance coupling and improves high-frequency current return path inductance - especially beneficial in multi-Gbps layouts. The UDFN10 package provides two dedicated GND terminals to support low-inductance grounding strategies, but single-point grounding meets basic specification compliance. ESD8018MUTAG's performance validation assumes proper PCB layout per Figures 16–17.
What is the lead solder temperature rating for ESD8018MUTAG, and how does it impact reflow profile selection?
The lead solder temperature rating for ESD8018MUTAG is 260 °C for 10 seconds, as specified in the Maximum Ratings table. This Pb-free, RoHS-compliant device is qualified for standard IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. The 260 °C rating aligns with Level 3 moisture sensitivity (MSL3), requiring bake-out if floor life is exceeded. ESD8018MUTAG's thermal robustness supports compatibility with common lead-free reflow ovens without delamination or solder joint voiding - provided the profile adheres to ramp rates and time-above-liquidus limits defined in the onsemi Soldering and Mounting Techniques Reference Manual (SOLDERRM/D).
ESD8018MUTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- -
- Series:
- *
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- -
- Unidirectional Channels:
- -
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- -
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- -
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
ESD8018MUTAG FAQ
1.How can I place an order for ESD8018MUTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8018MUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8018MUTAG reliable?
The price and inventory of ESD8018MUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8018MUTAG is usually 5 days.
3.What payment methods are accepted for ESD8018MUTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8018MUTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8018MUTAG?
ESD8018MUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8018MUTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8018MUTAG?
For technical support, including ESD8018MUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8018MUTAG requirements.
6.How does Aetrix verify that ESD8018MUTAG is sourced from the original manufacturer or authorized distributors?
All ESD8018MUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8018MUTAG meets industry standards.
7.What is the process for return or replacement of ESD8018MUTAG?
All ESD8018MUTAG units undergo pre-shipment inspection (PSI). If there is an issue with ESD8018MUTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8018MUTAG part is unused and in its original packaging.
Return procedure for ESD8018MUTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8018MUTAG Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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