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onsemi ESD8106MUTAG
- Part No.:
- ESD8106MUTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 14-UFDFN
- Datasheet:
-
ESD8106MUTAG.pdf
- Description:
- TVS DIODE 3.3VWM 11.4VC 14UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,978
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Product details
Overview
ESD8106MUTAG from onsemi is a unidirectional transient voltage suppressor (TVS) diode array designed specifically for USB 3.0 SuperSpeed differential data line protection. It integrates two matched I/O pairs (D+/D− and SSTX+/SSTX−) with 0.35 pF max junction capacitance, 3.3 V working reverse voltage, and ±15 kV IEC 61000−4−2 contact ESD immunity - enabling low-distortion signal integrity at 5 Gb/s.
For engineers reviewing the ESD8106MUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance per I/O-to-GND path, flow-through UDFN14 layout compatibility, clamping voltage under ±8 kV IEC contact discharge (11.4 V / −8.0 V), and support for USB 3.0 eye diagram compliance with <0.66 dB insertion loss at 2.5 GHz fundamental.
Technical Context
The ESD8106MUTAG implements Low Voltage Punch Through (LVPT) technology, delivering fast turn-on below 4.0 V breakdown and optimized soft-failure protection for sub-28 nm USB 3.0 PHYs. Its unidirectional architecture supports only positive transient suppression relative to GND, requiring external biasing for bidirectional threat coverage.
It features a flow-through PCB routing scheme with pins 1–4 and 6–7 as NC but recommended for trace-matching between differential lanes; internal common GND connects pins 5 and 10. Dynamic resistance is 0.36 Ω (I/O→GND) and 0.44 Ω (GND→I/O), critical for minimizing voltage overshoot during high-di/dt ESD events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (I/O to GND) | 0.35 pF max - preserves USB 3.0 5 Gb/s signal integrity with minimal rise-time degradation |
| Working Reverse Voltage | 3.3 V - matches USB 3.0 VBUS-referenced I/O swing without leakage-induced DC offset |
| Breakdown Voltage | 4.0–5.0 V @ 1 mA - ensures reliable conduction onset before IC damage threshold |
| Clamping Voltage | 11.4 V / −8.0 V @ ±16 A TLP - limits peak stress on downstream PHY during Level 4 ESD |
| ESD Rating | ±15 kV contact / ±15 kV air per IEC 61000−4−2 - exceeds USB-IF compliance requirement |
| Junction Temp Range | −55°C to +125°C - supports industrial and extended-temperature host/port applications |
Pinout & Package
ESD8106MUTAG uses a 14-pin UDFN package (Case 517CQ, 3.5 mm × 1.35 mm, 0.5 mm pitch) with exposed thermal pad and flow-through signal routing. Pins 5 and 10 are internally shorted to common GND; pins 1–4 and 6–7 are NC but must be routed as mirror traces to maintain differential impedance symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7 | No Connect (NC) | Required for PCB trace matching to preserve differential pair length and impedance continuity |
| 5, 10 | Ground | Internally common GND terminal - single PCB connection sufficient per layout guidelines |
| 8, 9, 11, 12, 13, 14 | I/O | Three differential pairs: D+/D−, SSTX+/SSTX−, SSRX+/SSRX− - all referenced to GND |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.35 pF max per I/O-to-GND path - enables full USB 3.0 5 Gb/s eye opening with <0.66 dB loss at 2.5 GHz |
| LVPT technology | Turn-on voltage <4.0 V - protects sensitive 1.0 V/1.2 V PHYs against soft failures before latch-up |
| Flow-through layout | Linear I/O pin arrangement - eliminates stubs and maintains 90 Ω differential impedance across TX/RX lanes |
| IEC 61000−4−2 Level 4 | ±15 kV contact discharge - meets USB-IF mandatory ESD immunity for certified host/device ports |
Applications
| USB 3.0 Host Controller Protection | USB 3.0 Device Port Protection |
|---|---|
Use Scenario: Protecting upstream USB 3.0 controller ICs (e.g., Intel Panther Point, ASMedia ASM1083) on motherboard or docking station PCBs from connector-side ESD. IC Role / Device Role / Timing Role: Unidirectional TVS array placed between AC coupling caps and Type-A receptacle to clamp transients before reaching PHY analog front-end. Use Value: Maintains 5 Gb/s eye diagram integrity (Figure 11) while limiting clamped voltage to ≤11.4 V at 16 A TLP, preventing gate oxide rupture in 22 nm PHYs. | Use Scenario: Securing downstream USB 3.0 device ports (e.g., external SSD enclosures, HD webcams) against repeated hot-plug ESD events. IC Role / Device Role / Timing Role: Differential pair protector on both TX and RX lanes, mounted adjacent to Type-A plug interface per Figure 13 layout guidance. Use Value: Enables >10,000 connect/disconnect cycles with no signal degradation due to 0.35 pF capacitance and matched trace routing support. |
| High-Speed Docking Station Interface | Industrial USB 3.0 Vision Camera Link |
Use Scenario: ESD hardening of multi-lane USB 3.0 expansion docks handling simultaneous video/audio/data streams. IC Role / Device Role / Timing Role: Dual-role protector covering both host-facing and device-facing SuperSpeed lanes within compact UDFN14 footprint. Use Value: Single-component solution reduces BOM count by 50% vs discrete dual-channel arrays while maintaining <100 ps skew between differential pairs. | Use Scenario: Robust USB 3.0 connectivity for factory-floor machine vision cameras subject to cable discharge and static-prone environments. IC Role / Device Role / Timing Role: Front-line ESD guard on camera module PCB, placed directly at micro-B receptacle per Figure 14 routing rules. Use Value: −55°C to +125°C operating range ensures reliability in uncontrolled ambient conditions; UL 94 V−0 rating supports enclosure safety compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD8004MUTAG | SCR-based architecture; higher holding voltage (VH ≈ 3.5 V); 0.5 pF capacitance | Better thermal robustness for hard-failure prevention; less suitable for 5 Gb/s due to higher capacitance | Select when protecting older USB 2.0/3.0 controllers with larger process nodes where clamping speed is secondary to energy handling |
| TPD2EUSB30DRBR | Texas Instruments part; bidirectional; 0.3 pF; 3.6 V VRWM; different pinout (6-pin SON) | Supports bidirectional transients without external bias; incompatible PCB layout due to 6-pin vs 14-pin footprint | Choose for new designs requiring true bidirectional protection and layout flexibility, accepting re-spin for non-flow-through routing |
Compared with ESD8106MUTAG, ESD8004MUTAG offers superior high-current clamping but sacrifices USB 3.0 signal fidelity, while TPD2EUSB30DRBR provides bidirectional operation in a smaller package but requires redesign for pin compatibility and lacks integrated dual-pair flow-through routing.
Availability
ESD8106MUTAG is available at Aetrix Electronics and suitable for USB 3.0 host controllers, industrial vision camera interfaces, and high-speed docking stations requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for ESD8106MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and intelligent power solutions.
The ESD8106MUTAG belongs to onsemi's ESD8100 series of LVPT-based protection devices, engineered specifically to prevent recoverable "soft failures" in advanced-node USB 3.0 PHYs operating below 1.2 V core voltage.
FAQ
What is the primary circuit role of ESD8106MUTAG in a USB 3.0 design?
The ESD8106MUTAG serves as a unidirectional transient voltage suppressor array that protects SuperSpeed differential data lines (D+/D−, SSTX+/SSTX−, SSRX+/SSRX−) from electrostatic discharge. Its role is to clamp ESD-induced overvoltage spikes to safe levels-below the damage threshold of downstream PHY ICs-while introducing negligible signal distortion due to its 0.35 pF capacitance. ESD8106MUTAG achieves this using Low Voltage Punch Through (LVPT) technology optimized for sub-28 nm process geometries.
Does ESD8106MUTAG support bidirectional ESD protection?
No, ESD8106MUTAG is a unidirectional TVS device, meaning it conducts only for positive transients relative to ground. It does not protect against negative-going surges on I/O lines unless externally biased. For full bidirectional protection, designers must either use a complementary negative-bias network or select an alternative like TPD2EUSB30DRBR. The ESD8106MUTAG datasheet explicitly defines its operation as unidirectional, with clamping specified only for +8 A and −8 A TLP pulses under defined test conditions.
What is the significance of the "flow-through" package layout in ESD8106MUTAG?
The flow-through UDFN14 layout of ESD8106MUTAG places input and output pins linearly along opposite edges, enabling straight-through PCB trace routing without stubs or vias. This preserves 90 Ω differential impedance and minimizes skew between SuperSpeed pairs-critical for USB 3.0 5 Gb/s eye diagram compliance. Pins 1–4 and 6–7 are NC but must be mirrored as copper traces to balance parasitic inductance; ESD8106MUTAG's mechanical design thus directly supports signal integrity, not just ESD robustness.
Can ESD8106MUTAG be used for USB 2.0 applications?
Yes, ESD8106MUTAG can protect USB 2.0 D+/D− lines, but it is over-specified for that use case: its ultra-low 0.35 pF capacitance and dual-pair integration add cost and footprint versus dedicated USB 2.0 protectors like ESD9B5.0ST5G. However, ESD8106MUTAG remains functionally compatible-its 3.3 V VRWM, ±15 kV ESD rating, and low clamping voltage provide robust protection. System designers may choose ESD8106MUTAG in mixed-mode ports where future USB 3.0 upgradeability or layout reuse is prioritized.
What thermal and environmental ratings apply to ESD8106MUTAG?
ESD8106MUTAG is rated for junction temperatures from −55°C to +125°C and storage from −55°C to +150°C, supporting industrial and extended-temperature deployments. It carries UL 94 V−0 flammability certification and is Pb-free, halogen-free/BFR-free, and RoHS compliant. The UDFN14 package withstands 260°C lead solder temperature for 10 seconds, qualifying for standard reflow profiles. These ratings are confirmed in the official ESD8106/D datasheet revision P1 and apply directly to the ESD8106MUTAG orderable part.
ESD8106MUTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 14-UFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 6
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 11.4V (Typ)
- Current - Peak Pulse (10/1000µs):
- 16A (100ns)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.3pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-UDFN (3.5x1.35)
ESD8106MUTAG FAQ
1.How can I place an order for ESD8106MUTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8106MUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8106MUTAG reliable?
The price and inventory of ESD8106MUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8106MUTAG is usually 5 days.
3.What payment methods are accepted for ESD8106MUTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8106MUTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8106MUTAG?
ESD8106MUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8106MUTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8106MUTAG?
For technical support, including ESD8106MUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8106MUTAG requirements.
6.How does Aetrix verify that ESD8106MUTAG is sourced from the original manufacturer or authorized distributors?
All ESD8106MUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8106MUTAG meets industry standards.
7.What is the process for return or replacement of ESD8106MUTAG?
All ESD8106MUTAG units undergo pre-shipment inspection (PSI). If there is an issue with ESD8106MUTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8106MUTAG part is unused and in its original packaging.
Return procedure for ESD8106MUTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8106MUTAG Tags
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PESD2V0Y1BSFYL
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