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onsemi ESD8111FCT5G
- Part No.:
- ESD8111FCT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XFBGA, WLCSP
- Datasheet:
-
ESD8111FCT5G.pdf
- Description:
- LOW CAP SCR IN 0201 DSN
- Quantity:
- Payment:
- Shipping:
Inventory:8,680
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Product details
Overview
ESD8111FCT5G from onsemi is an ultra-low-capacitance bidirectional ESD protection diode in a 0.6 mm × 0.3 mm WLCSP2 package, rated for 3.3 V working voltage, 0.2 pF typical junction capacitance (I/O to GND), and ±30 kV IEC 61000−4−2 contact ESD immunity-designed specifically to protect high-speed USB 3.0/3.1 and MHL 2.0 data lines without signal integrity degradation.
For engineers reviewing the ESD8111FCT5G datasheet, pinout, applications, or equivalent options, this device is selected for high-bandwidth interface protection where sub-0.4 pF capacitance, low clamping voltage (8.0 V @ 7.1 A), and minimal insertion loss are critical to maintaining signal fidelity at multi-GHz frequencies.
Technical Context
The ESD8111FCT5G implements a low-leakage silicon avalanche diode structure optimized for fast transient response and minimal parasitic loading. Its bidirectional clamping architecture ensures symmetrical protection for AC-coupled differential pairs, with dynamic resistance of 0.46 Ω enabling tight voltage control during ESD events.
Designed for placement directly at connector interfaces, it operates across −55 °C to +150 °C junction temperature and maintains stable capacitance (<0.4 pF) up to 1 GHz-verified via S21 insertion loss measurements showing <−0.5 dB loss at 5 GHz-making it suitable for 5 Gbps+ serial links.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Voltage | 3.3 V - Matches standard 3.3 V I/O rail; prevents false triggering during normal operation. |
| Junction Capacitance | 0.2 pF typ @ 0 V, 1 MHz - Enables use on >5 Gbps differential lanes without measurable signal distortion. |
| ESD Clamping Voltage | 8.0 V @ 7.1 A (8/20 µs pulse) - Limits downstream IC stress below 9 V during Level 4 IEC contact discharge. |
| IEC 61000−4−2 Rating | ±30 kV contact / ±30 kV air - Exceeds Level 4 requirement (±8 kV contact / ±15 kV air) by wide margin. |
| Breakdown Voltage | 5.5–8.6 V @ 1 mA - Ensures robust overvoltage margin above 3.3 V VRWM while avoiding premature conduction. |
| Dynamic Resistance | 0.46 Ω - Delivers predictable clamping behavior across current range; reduces VC rise under high IPP. |
| Reverse Leakage | 1.0 µA @ 3.3 V - Negligible power drain on battery-powered high-speed ports. |
Pinout & Package
ESD8111FCT5G uses the WLCSP2 (Case 567AV) package: 0.6 mm × 0.3 mm, 0.36 mm pitch, bottom-terminal wafer-level chip-scale construction with solder bumps. This ultra-compact footprint minimizes trace inductance and parasitic capacitance for optimal RF performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | I/O Line Anode/Cathode (Bidirectional) | Connects to protected high-speed data line (e.g., USB 3.1 TX+/RX+); symmetric conduction path enables AC-coupled protection. |
| 2 | GND | Direct low-inductance connection to system ground plane; required for effective ESD current shunting and low-impedance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.2 pF typ (I/O to GND) - Preserves signal integrity on 5–10 Gbps differential interfaces without equalization overhead. |
| Bidirectional ESD clamping | ±30 kV IEC 61000−4−2 contact rating - Protects both positive and negative transients on AC-coupled data lanes without polarity constraints. |
| Low dynamic resistance | 0.46 Ω - Ensures clamping voltage remains tightly bounded across full ESD current range (up to 16 A). |
| Pb-free, RoHS-compliant WLCSP | 0.6 mm × 0.3 mm footprint - Enables placement within 1 mm of USB/MHL connectors; compatible with fine-pitch reflow processes. |
| High-temperature operation | −55 °C to +150 °C TJ - Supports deployment in automotive infotainment and industrial edge computing environments. |
Applications
| USB 3.1 Gen 1 Interface | MHL 2.0 Link Protection |
|---|---|
Use Scenario: Protecting SuperSpeed TX/RX differential pairs in laptop docking stations against user-handling ESD events. IC Role / Device Role: Primary ESD shunt placed between each data lane and chassis ground, immediately adjacent to USB Type-C receptacle. Use Value: 0.2 pF capacitance avoids degrading eye diagram opening at 5 Gbps; ±30 kV rating exceeds IEC Level 4 by 22 kV margin. |
Use Scenario: Safeguarding mobile high-definition link signals routed from smartphone SoC to external display adapter. IC Role / Device Role: Bidirectional transient suppressor on MHL 2.0 D+ and D− lines, operating in AC-coupled configuration. Use Value: Low dynamic resistance (0.46 Ω) limits clamping overshoot to ≤8.0 V during 7.1 A TLP pulses, preserving receiver input tolerance. |
| eSATA Data Port | PCIe Gen 3 Reference Clock |
Use Scenario: External SATA port protection in NAS enclosures exposed to frequent cable insertion/removal. IC Role / Device Role: Standalone ESD clamp on eSATA TX/RX lines, mounted directly at rear-panel connector. Use Value: Sub-0.4 pF max capacitance ensures <−0.3 dB insertion loss at 3 GHz-critical for maintaining SATA III 6 Gbps signal integrity. |
Use Scenario: Protecting 100 MHz PCIe Gen 3 reference clock traces running from motherboard to add-in card slot. IC Role / Device Role: Low-capacitance shunt on differential REFCLK± pair, minimizing jitter contribution. Use Value: 0.2 pF typical capacitance adds <0.05 ps RMS jitter; clamping voltage ≤8.0 V prevents clock buffer latch-up during ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD8101FCT5G | DSN2 (01005) package; 0.2 pF capacitance; ±23 kV IEC contact rating; lower ESD rating than ESD8111FCT5G. | Targeted at cost-sensitive USB 2.0 or lower-speed interfaces where ±23 kV suffices. | Select when board space allows larger 0.435 mm × 0.23 mm footprint and Level 4 ESD immunity is not required. |
| TPD2E001DRYR | Texas Instruments part in 0.8 mm × 0.8 mm X2SON; 0.8 pF capacitance; ±8 kV IEC contact; higher capacitance and lower ESD rating. | Suitable for legacy USB 2.0 or HDMI 1.4 interfaces with relaxed bandwidth requirements. | Choose only if existing layout accommodates larger package and 0.8 pF capacitance is acceptable for <480 Mbps signaling. |
Compared with ESD8101FCT5G and TPD2E001DRYR, the ESD8111FCT5G delivers superior ESD robustness (±30 kV vs. ±23 kV/±8 kV) and smallest form factor (0.6 mm × 0.3 mm), making it the preferred choice for next-generation 5–10 Gbps interfaces where PCB real estate and signal fidelity are constrained.
Availability
ESD8111FCT5G is available at Aetrix Electronics and suitable for USB 3.1, MHL 2.0, and eSATA applications requiring stable component supply, high-volume tape-and-reel delivery, and long-term lifecycle support.
Supply support for ESD8111FCT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESD8111FCT5G belongs to onsemi's ESD81x1 series-engineered specifically for ultra-high-speed data line protection, emphasizing sub-0.4 pF capacitance, bidirectional clamping, and industry-leading ±30 kV ESD immunity.
FAQ
What is the maximum operating temperature for ESD8111FCT5G?
The ESD8111FCT5G supports an operating junction temperature range of −55 °C to +150 °C, enabling reliable deployment in under-hood automotive modules, industrial gateways, and thermally constrained portable devices. This rating is verified per JEDEC JESD22-A104 and applies across full electrical specifications.
Does ESD8111FCT5G require external biasing or control signals?
No, the ESD8111FCT5G is a passive, bidirectional silicon avalanche diode requiring no external power, bias, or enable signals. It operates automatically during ESD transients by clamping voltage when the I/O-to-GND potential exceeds its breakdown threshold (5.5–8.6 V), making it ideal for always-on high-speed interfaces like USB 3.1.
Can ESD8111FCT5G be used on differential pairs without affecting common-mode rejection?
Yes-the ESD8111FCT5G's matched bidirectional characteristics and ultra-low capacitance (0.2 pF typ) ensure balanced impedance loading on differential lanes. Measured S21 insertion loss shows <−0.5 dB imbalance at 5 GHz, preserving CMRR in USB 3.1 Gen 1 and MHL 2.0 implementations when placed symmetrically on both lines.
What is the lead time and packaging format for ESD8111FCT5G?
ESD8111FCT5G ships in Pb-free, RoHS-compliant WLCSP2 packaging on 10,000-unit tape-and-reel format (EIA-481 compliant). Standard lead time is 4–6 weeks; Aetrix Electronics maintains active inventory for rapid fulfillment of prototype and production orders.
How does ESD8111FCT5G compare to TVS diodes with higher power ratings?
Unlike high-power unidirectional TVS diodes, the ESD8111FCT5G prioritizes ultra-low capacitance (0.2 pF) and fast response over surge energy handling. It is optimized for ESD (not lightning or inductive switching), delivering precise clamping at 8.0 V @ 7.1 A-ideal for protecting sensitive SerDes receivers where parasitic loading must be minimized.
ESD8111FCT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XFBGA, WLCSP
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 8V
- Current - Peak Pulse (10/1000µs):
- 7.1A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-WLCSP (0.6x0.3)
ESD8111FCT5G FAQ
1.How can I place an order for ESD8111FCT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8111FCT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8111FCT5G reliable?
The price and inventory of ESD8111FCT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8111FCT5G is usually 5 days.
3.What payment methods are accepted for ESD8111FCT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8111FCT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8111FCT5G?
ESD8111FCT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8111FCT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8111FCT5G?
For technical support, including ESD8111FCT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8111FCT5G requirements.
6.How does Aetrix verify that ESD8111FCT5G is sourced from the original manufacturer or authorized distributors?
All ESD8111FCT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8111FCT5G meets industry standards.
7.What is the process for return or replacement of ESD8111FCT5G?
All ESD8111FCT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD8111FCT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8111FCT5G part is unused and in its original packaging.
Return procedure for ESD8111FCT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8111FCT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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