Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi ESD8116MUTAG

Part No.:
ESD8116MUTAG
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
8-UFDFN
Datasheet:
AetrixESD8116MUTAG.pdf
Description:
ESD8116 - ESD Protection Array,
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,266,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ESD8116MUTAG from onsemi is a unidirectional, low-capacitance ESD protection diode array designed for USB 3.0/3.1 differential data lines. It delivers 0.35 pF max junction capacitance (I/O to GND), ±15 kV IEC 61000−4−2 contact/air ESD rating, and 11.4 V clamping voltage at +16 A TLP current - enabling robust protection without signal integrity degradation in 5–10 Gb/s high-speed interfaces.

For engineers reviewing the ESD8116MUTAG datasheet, pinout, applications, or equivalent options, this device is selected specifically for ultra-low-capacitance transient suppression on SSTX+/SSTX−, SSRX+/SSRX− lanes in USB Type-A and Type-C layouts where matched trace lengths and minimal insertion loss (<0.352 dB at 7.5 GHz) are critical.

Technical Context

The ESD8116MUTAG implements Low Voltage Punch Through (LVPT) technology, enabling fast turn-on below 4.0 V breakdown and optimized soft-failure protection for sub-28 nm chipsets. Its unidirectional configuration supports 3.3 V working peak reverse voltage with 1.0 µA max reverse leakage at VRWM.

Designed for flow-through PCB routing, it features six independent I/O pins (pins 1, 4–8) sharing two common GND terminals (pins 2, 3), minimizing parasitic inductance and preserving differential impedance continuity. Dynamic resistance is specified at 0.36 Ω (I/O→GND) and 0.44 Ω (GND→I/O), ensuring stable clamping across polarity.

Key Specifications

Parameter Value and Actual Design Meaning
Capacitance (I/O to GND) 0.35 pF max - preserves signal integrity up to 10 Gb/s (USB 3.1) with <0.352 dB insertion loss at 7.5 GHz fundamental
Clamping Voltage @ ±16 A +11.4 V / −8.0 V - limits voltage stress during IEC Level 4 ESD events to prevent latch-up or gate oxide damage
Working Peak Reverse Voltage 3.3 V - matches USB 3.x common-mode voltage range and enables direct placement after AC coupling caps
Breakdown Voltage 4.0–5.0 V @ 1 mA - ensures reliable turn-on before IC I/O absolute maximum ratings are exceeded
ESD Rating (IEC 61000−4−2) ±15 kV contact & air - exceeds Level 4 requirement, supporting full-system ESD compliance without additional stages
Dynamic Resistance 0.36 Ω (I/O→GND), 0.44 Ω (GND→I/O) - maintains consistent clamping behavior across polarity and minimizes voltage overshoot
Junction Temperature Range −55 °C to +125 °C - supports operation in industrial and automotive under-hood environments

Pinout & Package

ESD8116MUTAG is housed in an 8-pin UDFN package (Case 517CX), measuring 2.0 mm × 1.2 mm × 0.5 mm with 0.4 mm pitch and wettable flank terminals for automated optical inspection. The flow-through layout places I/O pins on opposing edges to enable straight-line PCB routing between connector and SoC.

Pin/Terminal Circuit Role Design Meaning
Pin 1 I/O Protected signal lane (e.g., SSTX+ or SSRX+); connects directly to connector side of AC coupling cap
Pins 2, 3 GND Common ground return path; minimum one connection required, but both recommended for lower inductance
Pin 4 I/O Second protected lane (e.g., SSTX−); paired with Pin 1 for differential signaling
Pin 5 I/O Third protected lane (e.g., SSRX+); supports multi-lane USB 3.x or DisplayPort applications
Pin 6 I/O Fourth protected lane (e.g., SSRX−); maintains symmetry with Pin 5 for balanced impedance
Pin 7 I/O Fifth protected lane (e.g., AUX+ in DisplayPort); extends protection beyond core USB lanes
Pin 8 I/O Sixth protected lane (e.g., AUX−); completes 3× differential pair coverage in compact footprint

Key Features

Feature Design Value
Ultra-low capacitance array 0.35 pF max per I/O-to-GND path - avoids signal rise-time degradation and eye closure at 10 Gb/s
LVPT silicon technology Sub-4.0 V turn-on with shallow snapback - prioritizes soft-failure prevention over thermal hard-failure mitigation
Flow-through UDFN8 layout Linear I/O pin arrangement (1–4–5–6–7–8) with dual GND - enables impedance-matched, length-matched differential routing
IEC 61000−4−2 Level 4 compliance ±15 kV contact/air rating - satisfies end-equipment immunity requirements without system-level redesign
Pb-free, RoHS-compliant packaging UDFN8 with matte tin terminations - compatible with lead-free reflow profiles (260 °C, 10 s) and halogen-free PCB assembly

Applications

USB 3.0/3.1 Interface Protection DisplayPort 1.2/1.4 Line Protection

Use Scenario: Protecting host and peripheral ports in laptops, docking stations, and external SSDs against repeated ESD events during cable insertion/removal.

IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed between USB Type-A/C connector and AC coupling capacitors on SSTX+/SSTX− and SSRX+/SSRX− lanes.

Use Value: Maintains 5–10 Gb/s eye diagram integrity (Fig. 10–11) while clamping ±15 kV ESD transients to ≤11.4 V - preventing PHY layer lockup or link training failure.

Use Scenario: Securing DisplayPort source (GPU) and sink (monitor) ports against electrostatic discharge in thin-client workstations and digital signage.

IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on main link lanes (LANE 0+/− through LANE 3+/−) and AUX CH+/−, mounted adjacent to receptacle.

Use Value: Delivers <0.47 pF max capacitance and <0.352 dB insertion loss at 7.5 GHz (3rd harmonic of 2.5 GHz DP 1.2), preserving HBR2/HBR3 timing margins.

High-Speed Mobile Docking Industrial USB-C Hub Design

Use Scenario: Enabling ruggedized USB-C docking solutions for field-deployed tablets and medical tablets exposed to frequent handling in clinical or warehouse settings.

IC Role / Device Role / Timing Role: Six-channel ESD array covering all SuperSpeed TX/RX pairs plus CC and SBU lines in hybrid top-mount Type-C connectors (Fig. 14).

Use Value: Dual GND pins (2,3) and 0.4 mm pitch UDFN8 allow compact, symmetric layout - reducing stub length to <1.5 mm and limiting impedance discontinuity to <5%.

Use Scenario: Building long-lifecycle industrial USB-C hubs for factory automation controllers requiring >10-year component availability and extended temperature operation.

IC Role / Device Role / Timing Role: Primary ESD front-end protection on upstream/downstream ports, operating continuously from −40 °C to +85 °C ambient with no derating.

Use Value: −55 °C to +125 °C junction rating and 1.0 µA max leakage at 3.3 V ensure stable clamping performance across thermal cycling and humidity exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
ESD8008MUTAG SCR-based architecture; higher holding voltage (VH ≈ 2.5 V), deeper snapback, lower clamping at >10 A (9.2 V @ +16 A) Better suited for hard-failure prevention in high-current surge scenarios; higher capacitance (0.55 pF) Select when protecting legacy 28 nm or larger geometry PHYs where thermal failure risk dominates; avoid for 10 Gb/s USB 3.1 due to bandwidth limitation.
TPD4E05U06DQAR TI's 4-channel array; 0.5 pF typical capacitance; ±12 kV IEC 61000−4−2 contact rating; different pinout (4 I/O + 2 GND in 6-pin DQFN) Limited to 4 lanes; requires layout redesign for 6-lane USB 3.x; lower ESD rating restricts use to Level 3 systems Consider only for cost-sensitive 4-lane applications (e.g., USB 3.0-only peripherals); not drop-in for ESD8116MUTAG's 6-I/O UDFN8 footprint.

Compared with ESD8116MUTAG, ESD8008MUTAG offers superior high-current clamping but sacrifices bandwidth, while TPD4E05U06DQAR provides vendor diversification at the cost of reduced ESD margin and lane count - making ESD8116MUTAG the optimal balance for new 6-lane, 10 Gb/s designs requiring Level 4 compliance.

Availability

ESD8116MUTAG is available at Aetrix Electronics and suitable for USB 3.1 Gen 2 interface protection, DisplayPort 1.4 line guarding, and industrial USB-C hub designs requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for ESD8116MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The ESD8116MUTAG belongs to onsemi's ESD8100 series of LVPT-based protection devices, engineered specifically to prevent recoverable "soft failures" in high-speed serial interfaces with sub-4 V turn-on and ultra-low capacitance.

FAQ

What is the primary circuit role of the ESD8116MUTAG in a USB 3.1 design?

The ESD8116MUTAG serves as a unidirectional, low-capacitance ESD protection diode array placed on SSTX+/SSTX− and SSRX+/SSRX− differential lanes. Its role is to clamp transient voltages from IEC 61000−4−2 ESD events to ≤11.4 V while adding <0.35 pF capacitance per I/O-to-GND path - thereby preserving signal integrity at 10 Gb/s without degrading eye opening. This function is confirmed in Figures 10–11 and Table 1 of the official ESD8116/D datasheet.

Does the ESD8116MUTAG support bidirectional ESD protection?

No, the ESD8116MUTAG is explicitly a unidirectional device, as stated in the "ELECTRICAL CHARACTERISTICS" section and illustrated in Figure 1 (pin schematic). It is rated for 3.3 V working peak reverse voltage (VRWM) and operates only when the I/O pin is driven positive relative to GND. For bidirectional protection, onsemi recommends alternatives such as the ESD7L5.0DT5G, which uses Zener-based architecture and supports symmetrical ±5.0 V clamping.

How does the UDFN8 package of the ESD8116MUTAG improve high-speed layout?

The UDFN8 package (Case 517CX) uses a flow-through pin arrangement - I/O pins on opposing long edges (1,4–8) and dual GND terminals (2,3) centrally located - enabling straight-line PCB routing between connector and SoC. This minimizes stub length, maintains differential pair symmetry, and reduces parasitic inductance. The 0.4 mm pitch and wettable flanks also support automated optical inspection and reliable solder joint formation per IPC-A-610 Class 2 requirements.

Can the ESD8116MUTAG be used for DisplayPort 1.4 applications?

Yes, the ESD8116MUTAG is validated for DisplayPort 1.4 in the "Typical Applications" section and Figure 12 (RF Insertion Loss). With 0.35 pF max capacitance and <0.352 dB insertion loss at 7.5 GHz (3rd harmonic of DP 1.2's 2.7 GHz fundamental), it meets HBR3 timing budgets. Its six independent I/O channels support full 4-lane main link plus AUX CH+/−, as shown in layout guidance for Type-C connectors (Figure 14).

What is the maximum peak pulse current the ESD8116MUTAG can handle per I/O line?

The ESD8116MUTAG is rated for a maximum peak pulse current (IPP) of ±16 A per I/O line under IEC 61000−4−2 Level 4 equivalent conditions, as specified in the "ELECTRICAL CHARACTERISTICS" table. At this current, clamping voltage is +11.4 V (positive) and −8.0 V (negative), measured using TLP testing per ANSI/ESD STM5.5.1 with Z₀ = 50 Ω, tₚ = 100 ns, and averaging window 30–60 ns.

ESD8116MUTAG Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
8-UFDFN
Series:
-
Packaging:
Bulk
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
6
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
4V
Voltage - Clamping (Max) @ Ipp:
11.4V (Typ)
Current - Peak Pulse (10/1000µs):
16A
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
USB
Capacitance @ Frequency:
0.3pF @ 1MHz
Operating Temperature:
-55°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-UDFN (2x1.2)

ESD8116MUTAG FAQ

1.How can I place an order for ESD8116MUTAG through Aetrix?

Please submit a Request for Quotation (RFQ) for ESD8116MUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ESD8116MUTAG reliable?

The price and inventory of ESD8116MUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8116MUTAG is usually 5 days.

3.What payment methods are accepted for ESD8116MUTAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8116MUTAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ESD8116MUTAG?

ESD8116MUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ESD8116MUTAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ESD8116MUTAG?

For technical support, including ESD8116MUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8116MUTAG requirements.

6.How does Aetrix verify that ESD8116MUTAG is sourced from the original manufacturer or authorized distributors?

All ESD8116MUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8116MUTAG meets industry standards.

7.What is the process for return or replacement of ESD8116MUTAG?

All ESD8116MUTAG units undergo pre-shipment inspection (PSI). If there is an issue with ESD8116MUTAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ESD8116MUTAG part is unused and in its original packaging.

Return procedure for ESD8116MUTAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ESD8116MUTAG Tags

  • ESD8116MUTAG
  • ESD8116MUTAG PDF
  • ESD8116MUTAG Datasheet
  • ESD8116MUTAG Specifications
  • ESD8116MUTAG Images
  • onsemi
  • onsemi ESD8116MUTAG
  • Buy ESD8116MUTAG
  • ESD8116MUTAG Price
  • ESD8116MUTAG Distributor
  • ESD8116MUTAG Supplier
  • ESD8116MUTAG Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER