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onsemi ESD8351HT1G
- Part No.:
- ESD8351HT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
ESD8351HT1G.pdf
- Description:
- TVS DIODE 3.3VWM 11.2VC SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:6,880
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Product details
Overview
ESD8351HT1G from onsemi is a low-capacitance bidirectional ESD protection diode in SOD-323 package, designed for high-speed data lines including USB 2.0 and eSATA. It provides ±15 kV IEC 61000-4-2 contact ESD protection, 0.55 pF typical junction capacitance at 1 MHz, 3.3 V reverse working voltage, and clamps to 8.2 V at 5 A peak pulse current.
For engineers reviewing the ESD8351HT1G datasheet, pinout, applications, or equivalent options, this device is selected for ultra-low signal distortion in 480 Mbps USB 2.0 interfaces, where sub-0.6 pF capacitance and latch-up–free operation are critical for signal integrity and system reliability.
Technical Context
The ESD8351HT1G uses a snap-back SCR-based structure optimized for fast turn-on and low clamping voltage during ESD transients. Its bidirectional configuration protects both polarities of differential or single-ended high-speed lines without polarity constraints.
It meets IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact) and ISO 10605 (±30 kV), with dynamic resistance of 0.62 Ω (Pin1→Pin2) enabling stable clamping under 8/20 µs surge conditions. The device is AEC-Q101 qualified and Pb-free, RoHS-compliant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 3.3 V - Matches USB 2.0 I/O rail voltage, ensuring no leakage or conduction during normal operation. |
| Junction Capacitance | 0.55 pF max @ 1 MHz - Minimizes signal attenuation and timing skew on 480 Mbps USB 2.0 data lines. |
| Clamping Voltage | 8.2 V @ 5 A, 8/20 µs - Limits transient overvoltage to safe levels below IC damage thresholds. |
| ESD Rating | ±15 kV contact per IEC 61000-4-2 - Provides robust system-level ESD immunity without external circuitry. |
| Dynamic Resistance | 0.62 Ω (Pin1→Pin2) - Ensures predictable voltage drop and consistent clamping behavior across surge events. |
| Operating Temperature | −55 °C to +125 °C - Supports industrial and automotive environments where thermal stability is required. |
Pinout & Package
SOD-323 package (Case 477), 1.70 mm × 1.25 mm × 0.85 mm body size, surface-mount, with cathode band marking on Pin 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Connected to protected I/O line; forms anode-cathode pair with Pin 2 for bidirectional clamping path to GND. |
| Pin 2 | Anode | Connected to GND; completes ESD current path during positive or negative transients on the I/O line. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD protection | Enables single-device protection of AC-coupled or differential signals without polarity assignment. |
| Ultra-low 0.55 pF capacitance | Maintains signal rise/fall times and impedance matching on USB 2.0 D+/D− lines. |
| Latch-up–free operation for USB 2.0 | Validated via load-line analysis per Application Note AND9116/D for HS/FS/LS modes. |
| AEC-Q101 qualification | Confirms reliability for automotive infotainment and telematics interfaces exposed to harsh ESD environments. |
Applications
| USB 2.0 Interface Protection | eSATA Data Line Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of a USB 2.0 host controller against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point. Use Value: 0.55 pF capacitance prevents signal degradation at 480 Mbps, while ±15 kV contact rating ensures compliance with IEC 61000-4-2 Level 4. | Use Scenario: Shielding eSATA TX/RX pairs from ESD during cable mating in external storage enclosures. IC Role / Device Role / Timing Role: Low-capacitance clamp between differential signal and chassis ground. Use Value: Clamping voltage ≤8.2 V at 5 A limits stress on SATA PHY receivers, preserving eye diagram integrity. |
| Industrial Control Panel I/O | Automotive Infotainment USB Port |
Use Scenario: Guarding front-panel USB ports on PLC HMIs exposed to operator-handling ESD. IC Role / Device Role / Timing Role: Primary ESD shunt on each I/O line before EMI filter and transceiver. Use Value: −55 °C to +125 °C operating range supports wide ambient temperature deployment without derating. | Use Scenario: Protecting USB 2.0 ports in vehicle head units subject to AEC-Q101 environmental stress testing. IC Role / Device Role / Timing Role: AEC-Q101–qualified discrete protector integrated into automotive-grade PCB layout. Use Value: SZ-prefix variant (SZESD8351HT1G) enables PPAP-compliant supply chain traceability and site-specific control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD8004MUT5G | Lower capacitance (0.40 pF), X3DFN2 package (0.62×0.32 mm), higher VHOLD (1.25 V) | Optimized for USB 3.0 SS and DisplayPort; not validated for USB 2.0 latch-up margin per Table 1 | Select when footprint space is constrained and USB 2.0 compatibility is secondary to ultra-low capacitance. |
| ESD8104MUT5G | Higher breakdown voltage (min 5.8 V), same X3DFN2 package, designed for HDMI TMDS latch-up immunity | Required for HDMI 1.4/1.3a; unsuitable for USB 2.0 due to excessive VBR and different load-line behavior | Choose only for HDMI applications; avoid for USB 2.0 where ESD8351HT1G's latch-up–free validation applies. |
Compared with ESD8004MUT5G and ESD8104MUT5G, the ESD8351HT1G delivers verified latch-up–free operation for USB 2.0 HS/FS/LS modes within its specified 3.3 V VRWM and 0.55 pF capacitance envelope-making it the only one of the three qualified for direct use in legacy USB 2.0 designs without load-line revalidation.
Availability
ESD8351HT1G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial HMI I/O shielding, and automotive infotainment port hardening requiring stable component supply and long-term lifecycle support.
Supply support for ESD8351HT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions.
The ESD8351 Series belongs to onsemi's 8000-series ESD protection portfolio, engineered specifically for latch-up–free, ultra-low-capacitance protection of high-speed serial interfaces including USB, eSATA, and DisplayPort.
FAQ
What is the maximum junction capacitance of ESD8351HT1G and why does it matter for USB 2.0?
The ESD8351HT1G has a maximum junction capacitance of 0.55 pF at 1 MHz. This ultra-low value is critical for USB 2.0 because it minimizes signal distortion, preserves edge rates, and maintains impedance integrity on 480 Mbps differential D+/D− lines-ensuring full compliance with USB 2.0 electrical specifications without requiring layout compensation.
Is ESD8351HT1G suitable for HDMI applications?
No, ESD8351HT1G is not suitable for HDMI applications. Per onsemi Application Note AND9116/D and Figure 7, the ESD8351HT1G exhibits potential latch-up behavior under HDMI 1.4/1.3a TMDS load conditions. For HDMI, onsemi recommends ESD8104 or ESD8040-devices explicitly designed and validated for latch-up immunity in that interface.
What ESD standards does ESD8351HT1G meet, and at what test levels?
The ESD8351HT1G meets IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact), ISO 10605 (±30 kV), and is AEC-Q101 qualified. These ratings are confirmed in the Maximum Ratings table and Electrical Characteristics section of the official datasheet (Rev. 13, November 2025), with clamping performance validated using TLP and IEC waveform testing.
What is the package type and marking convention for ESD8351HT1G?
The ESD8351HT1G uses the SOD-323 package (Case 477), with dimensions 1.70 mm × 1.25 mm × 0.85 mm. Marking consists of a two-character device code followed by a date code (e.g., "AE" + "M"), with Pin 1 identified by a cathode band. The "G" suffix denotes Pb-free and RoHS compliance.
Does ESD8351HT1G require external bias or control circuitry to operate?
No, ESD8351HT1G is a passive, bidirectional TVS diode requiring no external bias, power, or control signals. It operates solely based on voltage threshold behavior: conducting only during ESD transients exceeding its breakdown voltage (5.5–7.8 V), while presenting <500 nA leakage at 3.3 V VRWM during normal operation-making it fully transparent to the protected circuit.
ESD8351HT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.37pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
ESD8351HT1G FAQ
1.How can I place an order for ESD8351HT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8351HT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8351HT1G reliable?
The price and inventory of ESD8351HT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8351HT1G is usually 5 days.
3.What payment methods are accepted for ESD8351HT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8351HT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8351HT1G?
ESD8351HT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8351HT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8351HT1G?
For technical support, including ESD8351HT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8351HT1G requirements.
6.How does Aetrix verify that ESD8351HT1G is sourced from the original manufacturer or authorized distributors?
All ESD8351HT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8351HT1G meets industry standards.
7.What is the process for return or replacement of ESD8351HT1G?
All ESD8351HT1G units undergo pre-shipment inspection (PSI). If there is an issue with ESD8351HT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8351HT1G part is unused and in its original packaging.
Return procedure for ESD8351HT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8351HT1G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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