onsemi ESD8351MUT5G

Overview

ESD8351MUT5G from onsemi is a low-capacitance bidirectional ESD protection diode in X3DFN2 package, designed for high-speed data lines including USB 2.0 and eSATA. It delivers 0.40 pF typical junction capacitance at 2.5 GHz, ±15 kV IEC 61000-4-2 contact ESD rating, and 8.2 V clamping voltage at 5 A peak pulse current, protecting voltage-sensitive interfaces without signal integrity degradation.

For engineers reviewing the ESD8351MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low RF capacitance, latch-up-free operation in USB 2.0 HS/FS and DisplayPort, AEC-Q101 qualification for automotive use, and compatibility with 0.35 mm pitch PCB layouts.

Technical Context

The ESD8351MUT5G employs a snap-back SCR-based structure optimized for transient suppression while avoiding latch-up in defined high-speed interfaces. Its dynamic resistance of 0.62 Ω (Pin1→Pin2) and 0.59 Ω (Pin2→Pin1) enables fast voltage clamping during 8/20 µs surges up to 5 A.

It operates across −55 °C to +125 °C junction temperature range and supports IEC 61000-4-2 Level 4 (±15 kV air), ISO 10605 (±30 kV), and IEC 61000-4-5 surge immunity. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Pinout & Package

X3DFN2 package (0.62 mm × 0.32 mm × 0.24 mm, 0.35 mm pitch) with exposed cathode pad for thermal dissipation and ESD path optimization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD8351MUT5G, ESD8004MUT5G trades higher RF capacitance for slightly better clamping, limiting its use to sub-480 Mbps interfaces, while ESD8104MUT5G adds HDMI-specific latch-up margin at the cost of larger footprint and higher cost-making ESD8351MUT5G the optimal balance for USB 2.0, eSATA, and DisplayPort.

Availability

ESD8351MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, eSATA data line hardening, and automotive infotainment port hardening requiring stable component supply and long-term lifecycle support.

Supply support for ESD8351MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and communications markets.

The ESD8351 Series belongs to onsemi's 8000-series ESD protection portfolio, engineered specifically for latch-up-free, ultra-low-capacitance transient suppression on high-speed serial interfaces such as USB, eSATA, and DisplayPort.

FAQ

What is the primary function of the ESD8351MUT5G?

The ESD8351MUT5G is a bidirectional ESD protection diode designed to safeguard high-speed data lines from electrostatic discharge events. It clamps transient voltages to safe levels using a snap-back SCR structure while maintaining ultra-low 0.40 pF capacitance at 2.5 GHz-ensuring signal integrity on USB 2.0 and eSATA interfaces. Its role is strictly transient suppression, not voltage regulation or signal conditioning.

Does the ESD8351MUT5G support automotive applications?

Yes-the ESD8351MUT5G has an automotive-qualified variant, SZESD8351MUT5G*, which is AEC-Q101 qualified and PPAP capable. While the base ESD8351MUT5G is rated for −55 °C to +125 °C junction temperature, the SZ-prefix version undergoes additional site- and process-controlled qualification for automotive infotainment and ADAS interface protection.

Is the ESD8351MUT5G latch-up free for USB 2.0 High-Speed operation?

Yes-per Figure 7 and Table 1 of the datasheet, the ESD8351MUT5G is explicitly validated as latch-up free for USB 2.0 High-Speed (480 Mbps) applications. Its IV characteristics intersect the USB 2.0 HS load line at a single stable operating point, eliminating risk of sustained conduction after ESD events-unlike HDMI applications, where it is not recommended.

What is the package type and dimensions of the ESD8351MUT5G?

The ESD8351MUT5G uses the X3DFN2 package (Case 152AF): 0.62 mm × 0.32 mm × 0.24 mm body size with 0.35 mm lead pitch. It features a two-terminal configuration (Pin 1 = Cathode, Pin 2 = Anode) and an exposed cathode pad for low-inductance grounding-critical for effective ESD energy dissipation in high-frequency layouts.

How does the ESD8351MUT5G compare to the discontinued ESD8351HT1G?

The ESD8351MUT5G replaces the discontinued SOD-323 packaged ESD8351HT1G with superior RF performance: 0.40 pF @ 2.5 GHz versus 0.55 pF max for the HT1G variant. Its X3DFN2 package offers smaller footprint (0.62×0.32 mm vs. 1.70×1.25 mm), tighter pitch, and improved thermal coupling-making ESD8351MUT5G the preferred choice for space-constrained, high-speed PCB designs.