onsemi ESD8451N2T5G
- Part No.:
- ESD8451N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
ESD8451N2T5G.pdf
- Description:
- TVS DIODE 3.3VWM 19VC 2XDFN
- Quantity:
- Payment:

- Shipping:

Inventory:4,840
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESD8451N2T5G from onsemi is a low-capacitance bidirectional ESD protection diode in XDFN2 (1.0×0.6 mm) package, designed for high-speed data lines including USB 3.0 and eSATA. It delivers 0.30 pF max junction capacitance at 1 MHz, 17.0 V clamping voltage at 5.0 A (8/20 µs), and meets IEC 61000−4−2 Level 4 (±15 kV contact/air) with AEC−Q101 qualification.
For engineers reviewing the ESD8451N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, dynamic resistance of 0.84 Ω, latch-up-free operation in USB 3.0 SS and DisplayPort, and compatibility with automated SMT assembly due to its 0.65 mm pitch and exposed pad thermal design.
Technical Context
The ESD8451N2T5G employs a snap-back SCR-based structure optimized for transient suppression without latch-up in high-speed serial interfaces. Its 0.20–0.30 pF capacitance range (1 MHz to 2.5 GHz) ensures minimal signal distortion on differential pairs operating up to 5 Gbps.
It operates across −55 °C to +125 °C junction temperature, supports ±15 kV IEC 61000−4−2 ESD immunity, and features 3.3 V working peak voltage with 5.5–8.3 V breakdown voltage (1 mA test current), enabling robust protection of 3.3 V I/O rails without leakage-induced power loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (1 MHz) | 0.20–0.30 pF - preserves signal integrity on USB 3.0 SuperSpeed lanes with <0.1 dB insertion loss up to 5 GHz |
| Clamping Voltage | 17.0 V @ 5.0 A (8/20 µs) - limits transient overvoltage to safe levels for 3.3 V transceivers during ESD events |
| Working Peak Voltage | 3.3 V - matches standard I/O rail voltage, preventing false triggering during normal operation |
| Dynamic Resistance | 0.84 Ω (Pin1↔Pin2) - enables fast turn-on and low-voltage overshoot during sub-nanosecond ESD transients |
| ESD Rating | ±15 kV contact/air per IEC 61000−4−2 Level 4 - exceeds industrial and automotive system-level ESD requirements |
| Junction Temp Range | −55 °C to +125 °C - supports deployment in under-hood automotive modules and industrial edge controllers |
| AEC−Q101 Qualified | Yes - validated for automotive applications requiring PPAP documentation and zero-defect reliability |
Pinout & Package
XDFN2 package (Case 711AM), 1.0 mm × 0.6 mm × 0.3 mm body, 0.65 mm pitch, exposed thermal pad (pin 3 not electrically connected). RoHS-compliant, Pb-free, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (I/O side) | Connects to protected high-speed data line (e.g., USB 3.0 TX+/RX+); bidirectional conduction path |
| Pin 2 | Cathode (GND side) | Connects to system ground plane; provides low-impedance discharge path for ESD transients |
| Exposed Pad | Thermal & Ground Reference | Enhances thermal dissipation and reduces inductance in ESD current path; must be soldered to solid GND copper |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.30 pF max at 1 MHz - avoids signal attenuation and timing skew on 5 Gbps differential links |
| Latch-up free operation | Validated for USB 3.0 SS and DisplayPort per Table 1 - eliminates risk of sustained short-circuit failure after ESD |
| Low dynamic resistance | 0.84 Ω - minimizes clamping voltage overshoot and improves energy handling at high di/dt |
| AEC−Q101 qualification | Automotive-grade reliability with PPAP support - enables use in ADAS camera modules and infotainment USB ports |
| Bi-directional protection | Single device protects both positive and negative ESD transients - reduces BOM count vs. unidirectional solutions |
Applications
| USB 3.0 SuperSpeed Interface | eSATA Data Port |
|---|---|
Use Scenario: Protecting differential TX/RX pairs in external storage enclosures against user-handling ESD. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point. Use Value: 0.30 pF capacitance prevents >0.5 dB insertion loss at 5 GHz, maintaining eye diagram compliance per USB-IF spec. |
Use Scenario: Shielding hot-pluggable eSATA cables from ±15 kV contact discharge in industrial RAID systems. IC Role / Device Role / Timing Role: Low-inductance ESD clamp between data lines and chassis ground. Use Value: 17.0 V clamping voltage ensures eSATA PHY ICs (e.g., ASMedia ASM1083) remain within absolute maximum ratings. |
| MHL 2.0 Mobile Link | DisplayPort Source Port |
Use Scenario: Safeguarding MHL 2.0 video/audio tunneling over micro-USB connectors in smartphones and docks. IC Role / Device Role / Timing Role: Signal-line ESD protector with minimal parasitic loading on 3 Gbps TMDS-equivalent channels. Use Value: 0.25 pF capacitance at 2.5 GHz maintains MHL 2.0 jitter budget (<0.3 UI) under ESD stress. |
Use Scenario: Protecting DisplayPort 1.2 source outputs in laptops and docking stations from cable-discharge events. IC Role / Device Role / Timing Role: High-speed data line protector placed before EMI filter and common-mode choke. Use Value: Latch-up free behavior confirmed per Table 1 - avoids system lockup during repeated ESD exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD8451MUT5G | Higher capacitance (0.30 pF typ), higher clamping voltage (13.7 V @ 3.7 A), X3DFN2 (0.62×0.32 mm) package | Better suited for space-constrained USB 2.0/3.0 layouts where lower clamping voltage outweighs minor capacitance penalty | Select ESD8451MUT5G when board area is critical and 13.7 V clamping suffices for downstream PHY tolerance |
| ESD8006MUT5G | Lower capacitance (0.15 pF), higher working voltage (5.0 V), same X3DFN2 package, rated for HDMI 1.4 | Supports HDMI TMDS lanes and higher-voltage I/Os; includes latch-up mitigation for 3.465 V min VBR | Choose ESD8006MUT5G for multi-protocol ports requiring HDMI + USB coexistence, not for 3.3 V-only designs |
Compared with ESD8451MUT5G and ESD8006MUT5G, the ESD8451N2T5G offers optimal balance of ultra-low capacitance, automotive qualification, and proven latch-up immunity in USB 3.0 SS - making it preferred for cost-sensitive, thermally constrained, and automotive-grade high-speed interface protection.
Availability
ESD8451N2T5G is available at Aetrix Electronics and suitable for USB 3.0 interface protection, automotive infotainment systems, and industrial eSATA storage requiring stable component supply and long-term lifecycle assurance.
Supply support for ESD8451N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and consumer markets.
The ESD8451N2T5G belongs to onsemi's 8000-series ESD protection portfolio, engineered specifically for latch-up-free, ultra-low-capacitance protection of high-speed serial interfaces such as USB 3.0, DisplayPort, and MHL.
FAQ
What is the maximum junction capacitance of the ESD8451N2T5G at 2.5 GHz?
The ESD8451N2T5G has a maximum junction capacitance of 0.25 pF at 2.5 GHz, as specified in the Electrical Characteristics table. This value ensures minimal impact on high-frequency signal integrity in USB 3.0 SuperSpeed and MHL 2.0 applications where bandwidth exceeds 2.5 GHz. The ESD8451N2T5G achieves this via optimized die geometry and low-parasitic packaging.
Is the ESD8451N2T5G qualified for automotive applications?
Yes, the ESD8451N2T5G carries the SZ prefix (SZESD8451N2T5G), confirming AEC−Q101 qualification and PPAP capability. It operates across −55 °C to +125 °C junction temperature and is validated for automotive infotainment USB ports and ADAS camera interfaces. The ESD8451N2T5G meets stringent automotive ESD immunity and reliability requirements without derating.
Does the ESD8451N2T5G support latch-up free operation in USB 3.0 applications?
Yes, the ESD8451N2T5G is explicitly listed in Table 1 of the datasheet as latch-up free for USB 3.0 SuperSpeed (SS) applications. Its SCR-based snap-back structure and 2.05 V holding voltage ensure stable single-point operation under typical USB 3.0 load lines, eliminating risk of sustained short-circuit failure after ESD events. This makes the ESD8451N2T5G suitable for mission-critical USB 3.0 host and device ports.
What is the clamping voltage of the ESD8451N2T5G under IEC 61000−4−2 Level 4 stress?
The ESD8451N2T5G clamps to 17.0 V at 5.0 A (8/20 µs pulse), which corresponds to IEC 61000−4−2 Level 4 (±8 kV contact). This clamping voltage is measured under standardized TLP conditions and ensures protected ICs - such as USB 3.0 PHYs with 18 V absolute maximum ratings - remain within safe operating limits. The ESD8451N2T5G achieves this with 0.84 Ω dynamic resistance.
What package type and dimensions does the ESD8451N2T5G use?
The ESD8451N2T5G uses the XDFN2 package (Case 711AM): 1.0 mm × 0.6 mm body size, 0.65 mm pin pitch, and 0.3 mm height. It features an exposed thermal pad for enhanced grounding and thermal performance. This compact, leadless package supports high-density PCB layouts and reflow-compatible assembly - critical for thin-profile consumer and automotive electronics using the ESD8451N2T5G.
ESD8451N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 19V
- Current - Peak Pulse (10/1000µs):
- 16A (100ns)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-XDFN (1x0.6) (SOD-882)
ESD8451N2T5G FAQ
1.How can I place an order for ESD8451N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8451N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8451N2T5G reliable?
The price and inventory of ESD8451N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8451N2T5G is usually 5 days.
3.What payment methods are accepted for ESD8451N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8451N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8451N2T5G?
ESD8451N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8451N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8451N2T5G?
For technical support, including ESD8451N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8451N2T5G requirements.
6.How does Aetrix verify that ESD8451N2T5G is sourced from the original manufacturer or authorized distributors?
All ESD8451N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8451N2T5G meets industry standards.
7.What is the process for return or replacement of ESD8451N2T5G?
All ESD8451N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD8451N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8451N2T5G part is unused and in its original packaging.
Return procedure for ESD8451N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8451N2T5G Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

