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onsemi ESD8472BMUT5G
- Part No.:
- ESD8472BMUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD8472BMUT5G.pdf
- Description:
- LOW CAP TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,276
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Product details
Overview
ESD8472BMUT5G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in a 0201-sized X3DFN2 package (0.60 mm × 0.30 mm), rated for 5.3 V working reverse voltage, 0.2 pF junction capacitance at 1 MHz, and ±8 kV IEC 61000-4-2 contact discharge protection - designed specifically for RF antenna line and high-speed data line protection in space-constrained wireless handsets.
For engineers reviewing the ESD8472BMUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include sub-0.3 pF capacitance linearity over voltage, <1 nA leakage at 5.3 V, clamping voltage ≤15 V at 1 A, dynamic resistance <1 Ω, and compatibility with 8.5 GHz RF signal paths requiring minimal insertion loss (0.25 dB max).
Technical Context
The ESD8472BMUT5G is a silicon-based bi-directional TVS diode configured as a single-channel, two-terminal device with symmetrical clamping behavior. Its low dynamic resistance (<1 Ω) and fast TLP response enable effective transient suppression without distorting high-frequency RF signals up to 8.5 GHz.
It operates as a voltage-clamped shunt protector: under normal bias (≤5.3 V), it presents <1 nA leakage and 0.2 pF capacitance; during ESD events (e.g., ±8 kV IEC 61000-4-2), it clamps within 11–20 V depending on peak current (1–3 A), maintaining signal integrity in antenna feedlines and USB 2.0/3.0 interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance @ 1 MHz | 0.2 pF - enables minimal RF signal distortion in antenna matching networks |
| Working Reverse Voltage | 5.3 V - supports standard 5 V logic and USB power rails without leakage activation |
| Clamping Voltage @ 1 A | 11–15 V - limits transient overvoltage to safe levels for downstream RF switches and PAs |
| ESD Rating | ±8 kV contact / ±8 kV air per IEC 61000-4-2 - meets Level 4 system-level ESD immunity |
| Leakage Current @ 5.3 V | <1 nA - prevents DC loading of sensitive RF front-end bias nodes |
| Dynamic Resistance | <1 Ω - ensures rapid energy shunting with low voltage overshoot during fast transients |
| Insertion Loss @ 8.5 GHz | 0.25 dB - preserves signal amplitude and return loss in GHz-band antenna paths |
Pinout & Package
ESD8472BMUT5G uses the X3DFN2 (Case 152AF) surface-mount package - a 2-terminal, 0.60 mm × 0.30 mm, 0.355 mm pitch micro-DNF footprint compatible with automated placement and reflow. No polarity marking; symmetric bi-directional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bi-directional) | Shared terminal for symmetrical ESD clamping path; no fixed polarity required |
| Terminal 2 | Anode/Cathode (bi-directional) | Paired terminal completing the bidirectional TVS junction; connects across protected line and ground |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | Industry-leading CV stability - maintains ≤0.3 pF variation from 0–5 V, critical for impedance-matched RF paths |
| Ultra-low insertion loss | 0.05 dB @ 1 MHz / 0.25 dB @ 8.5 GHz - avoids gain compression or mismatch in antenna feedlines |
| Small-footprint packaging | 0201DNS (X3DFN2) - saves >50% board area vs. 0402 alternatives while enabling fine-pitch RF layout |
| High ESD robustness | Withstands ≥1000 IEC 61000-4-2 strikes at ±8 kV - supports long-term reliability in consumer handheld environments |
| Pb-free & RoHS compliance | Halogen-free, lead-free terminations - meets global environmental regulations without derating |
Applications
| Antenna Line Protection | RF Front-End Switching |
|---|---|
Use Scenario: Protecting cellular/Wi-Fi/GNSS antenna feedlines from ESD during handling and operation in smartphones and IoT terminals. IC Role / Device Role / Timing Role: Bi-directional shunt TVS diode placed in series with the antenna trace, between RF switch output and antenna connector. Use Value: 0.2 pF capacitance and 0.25 dB loss at 8.5 GHz preserve S11/S21 performance while clamping ±8 kV transients below 15 V. | Use Scenario: Safeguarding RF switches (e.g., SPDT antenna switches) against ESD-induced gate oxide damage during hot-plug or user contact. IC Role / Device Role / Timing Role: Low-capacitance shunt protector mounted directly at switch RF I/O pins, referenced to local ground plane. Use Value: <1 nA leakage avoids DC bias shift; sub-1 Ω dynamic resistance ensures clamping before switch breakdown occurs. |
| USB 2.0 Data Lines | NFC Interface Protection |
Use Scenario: ESD hardening of D+/D− differential pairs in portable USB peripherals and host ports exposed to user interaction. IC Role / Device Role / Timing Role: Dual-line protection using two ESD8472BMUT5G devices (one per line), grounded to chassis or digital ground. Use Value: 0.2 pF capacitance prevents signal edge degradation at 480 Mbps; 5.3 V VRWM avoids false triggering during 3.3 V/5 V signaling. | Use Scenario: Protecting 13.56 MHz NFC transceiver antenna loops and IC pins from electrostatic discharge in payment terminals and wearables. IC Role / Device Role / Timing Role: Series-connected shunt diode across NFC loop terminals or parallel to IC's RFIO pins. Use Value: Capacitance linearity ensures stable 13.56 MHz resonance; ±8 kV rating covers common human-body-model ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance (4× higher), 5.5 V VRWM, SOT-5X3 package (1.0 mm × 0.6 mm) | Higher insertion loss limits use to sub-2 GHz applications; larger footprint reduces routing density | Preferred where cost sensitivity outweighs RF performance; not suitable for 5G/mmWave antenna lines |
| SP1001-01UTG | 0.35 pF capacitance, 5.0 V VRWM, 0201 package, ±12 kV ESD rating | Higher clamping voltage (19 V @ 1 A) risks downstream component stress; wider capacitance spread over voltage | Used when higher ESD margin is prioritized over RF linearity; verify clamping headroom with PA VDSMAX |
Compared with TPD2E001DRYR and SP1001-01UTG, ESD8472BMUT5G delivers superior RF transparency due to its 0.2 pF capacitance and exceptional CV linearity - making it the only option qualified for 8.5 GHz antenna feedline protection in premium mobile designs.
Availability
ESD8472BMUT5G is available at Aetrix Electronics and suitable for RF antenna protection, high-speed USB interface hardening, and NFC circuit safeguarding requiring stable component supply, consistent parametric performance, and full traceability across production lots.
Supply support for ESD8472BMUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation, serving automotive, industrial, cloud, and intelligent power markets with discrete, analog, and sensor solutions.
The ESD8472BMUT5G belongs to onsemi's ultra-low-capacitance ESD protection portfolio, engineered specifically for GHz-range RF signal integrity preservation in miniaturized wireless devices - balancing robust transient suppression with near-transparent RF behavior.
FAQ
What is the package type and dimensions of ESD8472BMUT5G?
ESD8472BMUT5G uses the X3DFN2 package (Case 152AF), also known as 0201DNS, measuring 0.60 mm × 0.30 mm with 0.355 mm pitch. It is a 2-terminal, bottom-terminated micro-DNF package optimized for high-frequency layouts and automated assembly. The device has no polarity marking and supports bi-directional ESD clamping in either orientation.
Does ESD8472BMUT5G support both contact and air-gap ESD testing per IEC 61000-4-2?
Yes, ESD8472BMUT5G is rated for ±8 kV contact discharge and ±8 kV air-gap discharge per IEC 61000-4-2 Level 4. Test data confirms repeatable clamping performance across ≥1000 such strikes without parameter shift. This rating is validated in the official onsemi datasheet (Publication Order Number ESD8472B/D, Rev. P1) and applies to the exact ESD8472BMUT5G variant.
What is the maximum operating frequency where ESD8472BMUT5G maintains acceptable insertion loss?
ESD8472BMUT5G maintains insertion loss ≤0.25 dB up to 8.5 GHz, as measured in the onsemi characterization report (Figure 5). At 1 GHz, loss is only 0.05 dB. This makes ESD8472BMUT5G suitable for 5G sub-6 GHz and Wi-Fi 6E antenna lines, but not for mmWave bands above 10 GHz where parasitic effects dominate.
Can ESD8472BMUT5G be used to protect USB 3.0 SuperSpeed differential pairs?
No - ESD8472BMUT5G is not recommended for USB 3.0 (5 Gbps) differential signaling. Its 0.2 pF capacitance and 0.25 dB loss at 8.5 GHz exceed acceptable limits for 2.5 GHz fundamental harmonics in USB 3.0. It is qualified for USB 2.0 (480 Mbps) and lower-speed interfaces. For USB 3.0, onsemi recommends dedicated high-speed ESD arrays like ESD7L5.0DT5G.
Is ESD8472BMUT5G compliant with RoHS and halogen-free standards?
Yes, ESD8472BMUT5G is Pb-free, halogen-free, and fully RoHS-compliant per EU Directive 2011/65/EU. This is confirmed in the onsemi ordering information table and marked "Pb-Free" in the package description. No exemptions apply, and material declarations are available through onsemi's compliance portal.
ESD8472BMUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 0.15pF @ 1GHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD8472BMUT5G FAQ
1.How can I place an order for ESD8472BMUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8472BMUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8472BMUT5G reliable?
The price and inventory of ESD8472BMUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8472BMUT5G is usually 5 days.
3.What payment methods are accepted for ESD8472BMUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8472BMUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8472BMUT5G?
ESD8472BMUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8472BMUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8472BMUT5G?
For technical support, including ESD8472BMUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8472BMUT5G requirements.
6.How does Aetrix verify that ESD8472BMUT5G is sourced from the original manufacturer or authorized distributors?
All ESD8472BMUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8472BMUT5G meets industry standards.
7.What is the process for return or replacement of ESD8472BMUT5G?
All ESD8472BMUT5G units undergo pre-shipment inspection (PSI). If there is an issue with ESD8472BMUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8472BMUT5G part is unused and in its original packaging.
Return procedure for ESD8472BMUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8472BMUT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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