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onsemi ESD8472MUT3G
- Part No.:
- ESD8472MUT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
ESD8472MUT3G.pdf
- Description:
- TVS DIODE 5.3VWM 20VC 2X3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:64,053
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Product details
Overview
ESD8472MUT3G from onsemi is a bi-directional ultra-low-capacitance ESD protection diode in X3DFN2 package, featuring 0.2 pF capacitance at 1 MHz, 5.3 V stand-off voltage, and ±8 kV IEC 61000-4-2 contact ESD rating. It protects RF signal paths in space-constrained wireless handsets and antenna lines.
For engineers reviewing the ESD8472MUT3G datasheet, pinout, applications, or equivalent options, key selection criteria include capacitance linearity over voltage, insertion loss below 0.25 dB at 8.5 GHz, clamping performance at 1–2.4 A pulses, and compatibility with high-frequency RF front-end layouts.
Technical Context
The ESD8472MUT3G is a silicon-based bi-directional TVS diode optimized for RF signal integrity. Its junction capacitance remains stable (0.15–0.30 pF) from 0 V to operating bias, enabling minimal signal distortion in antenna and PA output lines.
It employs low dynamic resistance (< 0.75 Ω) and fast response to transient events, delivering clamping voltages of 11–17.8 V across 1–2.4 A IEC 61000-4-5 pulses while maintaining <1 nA leakage at 5.3 V reverse bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance @ 1 MHz | 0.2 pF - Enables minimal RF signal attenuation in 5G/4G antenna feedlines |
| Stand-off Voltage | 5.3 V - Matches typical RF IC supply and I/O voltage rails without leakage |
| Clamping Voltage @ 1 A | 11–15 V - Limits transient overvoltage to safe levels for GaAs/GaN front-end components |
| ESD Rating | ±8 kV contact per IEC 61000-4-2 - Meets industrial and mobile handset ESD immunity requirements |
| Insertion Loss @ 8.5 GHz | 0.25 dB - Preserves signal fidelity in mmWave and high-band LTE/5G applications |
| Leakage Current @ 5.3 V | <1 nA - Prevents DC bias shift in sensitive LNA and mixer inputs |
| Package Size | 0.62 mm × 0.32 mm × 0.24 mm - Fits tight-pitch RF trace routing on compact PCBs |
Pinout & Package
ESD8472MUT3G is housed in the X3DFN2 (Case 152AF) surface-mount package: a 2-terminal, leadless, bi-directional diode with exposed cathode pad. Dimensions are 0.62 mm × 0.32 mm × 0.24 mm, pitch 0.35 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode | One side of bi-directional ESD path; connects to protected signal line (e.g., antenna feed) |
| Terminal 2 | Cathode | Common reference terminal tied to ground plane; provides low-inductance discharge path |
Key Features
| Feature | Design Value |
|---|---|
| Capacitance linearity over voltage | 0.15–0.30 pF across 0–5.3 V bias - maintains impedance match and S21 stability in RF switching paths |
| Ultra-low insertion loss | 0.05 dB @ 1 MHz, 0.25 dB @ 8.5 GHz - avoids gain compression in high-frequency transceivers |
| Low dynamic resistance | <0.75 Ω - ensures rapid clamping and reduced voltage overshoot during ESD strikes |
| AEC-Q101 qualified variant available | SZESD8472MUT5G - supports automotive infotainment and telematics RF modules requiring PPAP compliance |
Applications
| Antenna Line Protection | RF Front-End Switching |
|---|---|
Use Scenario: Protecting main diversity antenna feedline in LTE/5G smartphones against ESD during handling and operation. IC Role / Device Role / Timing Role: Bi-directional transient voltage suppressor placed in series between antenna switch and RF transceiver. Use Value: 0.2 pF capacitance and 0.25 dB loss at 8.5 GHz preserve TRP/TIS metrics and prevent detuning of matching networks. | Use Scenario: ESD protection at SPDT RF switch outputs driving power amplifier or low-noise amplifier paths. IC Role / Device Role / Timing Role: Signal-line clamp integrated adjacent to switch die to minimize parasitic inductance. Use Value: Sub-1 nA leakage avoids DC offset in bias tee networks; 11 V clamping at 1 A prevents gate oxide damage in GaAs pHEMT switches. |
| NFC Antenna Interface | USB 2.0 High-Speed Data Lines |
Use Scenario: Safeguarding 13.56 MHz NFC loop antenna traces from electrostatic discharge during card emulation mode. IC Role / Device Role / Timing Role: Low-capacitance shunt protector bridging antenna differential pair to ground. Use Value: 0.2 pF capacitance avoids resonance shift in tuned LC tank; ±8 kV ESD rating exceeds ISO/IEC 14443 human-body-model requirements. | Use Scenario: Protecting D+ and D− lines in portable USB 2.0 peripherals where board space limits use of larger TVS arrays. IC Role / Device Role / Timing Role: Dual-line ESD clamp placed before USB PHY to limit transient coupling into receiver inputs. Use Value: 5.3 V stand-off allows full USB 2.0 signaling swing (0–3.3 V); 15 V clamping at 2.4 A prevents PHY latch-up during system-level ESD testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SP1003-01WTG | 0.25 pF capacitance, 5.5 V stand-off, ±12 kV air discharge rating | Better air-gap ESD margin but higher insertion loss (0.4 dB @ 2.4 GHz) | Preferred for industrial handhelds with open-frame enclosures requiring higher air discharge immunity |
| CM1213-04SO | 0.5 pF capacitance, quad-channel array, 5.0 V stand-off | Supports multi-line protection (e.g., USB D+/D− + ID + VBUS) in single package | Used when protecting multiple high-speed lines simultaneously; trades capacitance for integration density |
Compared with SP1003-01WTG and CM1213-04SO, the ESD8472MUT3G delivers superior RF transparency due to its 0.2 pF capacitance and 0.25 dB loss at 8.5 GHz, making it optimal for single-line, high-frequency antenna and PA protection where signal integrity is critical.
Availability
ESD8472MUT3G is available at Aetrix Electronics and suitable for RF front-end design, antenna interface protection, and high-speed data line safeguarding requiring stable component supply and consistent parametric performance across production lots.
Supply support for ESD8472MUT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The ESD8472MUT3G belongs to onsemi's Micro-Packaged ESD Protection Diode product line, engineered specifically for ultra-low-capacitance transient suppression in RF and high-speed digital signal paths.
FAQ
What is the capacitance value of ESD8472MUT3G and why does it matter for RF designs?
The ESD8472MUT3G has a typical junction capacitance of 0.2 pF at 1 MHz and 0.15 pF at 1 GHz. This ultra-low value minimizes loading on RF signal paths-critical for preserving antenna efficiency, impedance matching, and S-parameter performance in 4G/5G front-ends. At 8.5 GHz, its capacitance remains stable, directly supporting mmWave applications without degrading return loss or group delay.
Does ESD8472MUT3G meet automotive qualification standards?
The ESD8472MUT3G itself is not AEC-Q101 qualified; however, the pin-compatible SZESD8472MUT5G variant is AEC-Q101 qualified and PPAP capable. For automotive infotainment or telematics modules requiring certified ESD protection, designers should specify the SZ-prefix version, which shares identical electrical specs and X3DFN2 packaging but includes extended reliability validation.
What is the maximum clamping voltage of ESD8472MUT3G under real-world ESD stress?
Under IEC 61000-4-5 8/20 µs lightning surge conditions, ESD8472MUT3G clamps to 15–17.8 V at 2.4 A peak pulse current. For IEC 61000-4-2 ESD events, clamping is verified at ±8 kV contact discharge with sub-15 V transient suppression-ensuring downstream RF ICs like LNAs and switches remain within absolute maximum ratings during system-level ESD testing.
Can ESD8472MUT3G be used on USB 3.0 SuperSpeed lines?
No-ESD8472MUT3G is not recommended for USB 3.0 (5 Gbps) differential pairs due to insufficient bandwidth margin. Its insertion loss rises significantly above 3 GHz, and its 0.2 pF capacitance, while low, still introduces measurable jitter and eye closure at 5 Gbps. It is validated for USB 2.0 (480 Mbps) and lower-speed interfaces such as NFC, GPS, and LTE antenna lines where bandwidth demands are ≤3 GHz.
How is thermal dissipation managed in the X3DFN2 package of ESD8472MUT3G?
The X3DFN2 package of ESD8472MUT3G features an exposed cathode pad that serves as the primary thermal and electrical path to the PCB ground plane. With a junction-to-ambient thermal resistance (RJA) of 400°C/W under standard FR-4 mounting, it relies on adequate copper pour and thermal vias beneath the pad to sustain repetitive 2.4 A pulses. Peak power dissipation is rated at 300 mW, limiting duty cycle in high-frequency transient environments.
ESD8472MUT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.3V (Max)
- Voltage - Breakdown (Min):
- 7V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- RF Antenna
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X3DFN (0.6x0.3) (0201)
ESD8472MUT3G FAQ
1.How can I place an order for ESD8472MUT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESD8472MUT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESD8472MUT3G reliable?
The price and inventory of ESD8472MUT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESD8472MUT3G is usually 5 days.
3.What payment methods are accepted for ESD8472MUT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESD8472MUT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESD8472MUT3G?
ESD8472MUT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESD8472MUT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESD8472MUT3G?
For technical support, including ESD8472MUT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESD8472MUT3G requirements.
6.How does Aetrix verify that ESD8472MUT3G is sourced from the original manufacturer or authorized distributors?
All ESD8472MUT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESD8472MUT3G meets industry standards.
7.What is the process for return or replacement of ESD8472MUT3G?
All ESD8472MUT3G units undergo pre-shipment inspection (PSI). If there is an issue with ESD8472MUT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESD8472MUT3G part is unused and in its original packaging.
Return procedure for ESD8472MUT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESD8472MUT3G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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