STMicroelectronics ESDA24P140-1U3M

Overview

ESDA24P140-1U3M from STMicroelectronics is a unidirectional single-line TVS diode designed for high-power ESD and EOS protection on Vbus power lines. It delivers 4500 W peak pulse power (8/20 µs), 140 A peak pulse current, 34 V clamping voltage at 100 A, 22 V stand-off voltage, and 0.2 µA leakage at 25 °C - deployed in USB power rail protection for smartphones and portable devices.

For engineers reviewing the ESDA24P140-1U3M datasheet, ESDA24P140-1U3M pinout, ESDA24P140-1U3M application, or ESDA24P140-1U3M equivalent, key selection criteria include clamping voltage under 140 A stress, QFN-3 package thermal and layout constraints, IEC 61000-4-2 ±30 kV compliance, and low dynamic resistance (0.07 Ω) for fast transient suppression.

Technical Context

This device implements a silicon avalanche diode structure optimized for low-clamping, high-energy transients on DC power rails. Its unidirectional configuration enables asymmetric protection with forward conduction only during negative surges, while its 0.07 Ω dynamic resistance ensures minimal voltage overshoot during 8/20 µs pulses up to 140 A.

The QFN-3 package integrates an exposed thermal pad for enhanced junction-to-PCB heat transfer, supporting continuous operation from –55 °C to +150 °C. Stand-off voltage (22 V) and breakdown voltage (24 V typ.) are tightly specified to avoid false triggering during normal 5 V USB Vbus operation while maintaining robust margin against overvoltage events.

Key Specifications

Pinout & Package

ESDA24P140-1U3M uses a 3-pin QFN package (2.0 × 2.0 mm, 0.55 mm height) with exposed thermal pad. Pin 1 and Pin 2 are internally connected GND terminals; Pin 3 is the Vbus line connection. The package supports automated reflow assembly per JEDEC J-STD-020 and requires controlled stencil opening (90% for leads, 50% for thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Compared with SMAJ24A and TPD2E001DRYR, ESDA24P140-1U3M uniquely combines ultra-compact QFN-3 packaging, 4500 W surge capacity, and unidirectional 22 V stand-off - making it optimal for space-constrained, high-reliability USB Vbus protection where discrete power-line-only suppression is preferred.

Availability

ESDA24P140-1U3M is available at Aetrix Electronics and suitable for USB Vbus protection, smartphone power rail hardening, and industrial USB hub design requiring stable component supply and guaranteed long-term sourcing.

Supply support for ESDA24P140-1U3M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

ESDA24P140-1U3M belongs to ST's ECOPACK®-qualified TVS diode portfolio, engineered specifically for high-density, high-reliability ESD protection in portable and USB-powered electronics.

FAQ

What is the recommended PCB layout for ESDA24P140-1U3M?

Place the device within 3 mm of the protected connector with short, wide traces to minimize inductance. Connect Pins 1 and 2 directly to a solid internal ground plane via multiple thermal vias under the exposed pad. Avoid routing other signals near the Vbus/GND path to prevent coupling. Use the recommended 1.5 × 1.5 mm footprint with 0.45 mm pad width and 0.71 mm center-to-center spacing.

Does ESDA24P140-1U3M protect against both positive and negative ESD events?

No - it is a unidirectional TVS diode, providing clamping only for positive transients on the Vbus line relative to ground. Negative excursions beyond –0.7 V forward bias are suppressed, but it does not provide symmetric ±30 kV protection like a bidirectional device. For full bidirectional protection, a second device or complementary design is required.

Can ESDA24P140-1U3M be used on a 3.3 V rail?

No - its 22 V stand-off voltage and 24 V typical breakdown make it unsuitable for 3.3 V systems. Using it on a 3.3 V rail would cause premature conduction and potential damage. For 3.3 V applications, ST recommends ESDALC6V1-1U2 or similar low-voltage TVS devices with 3.3 V stand-off and appropriate clamping.

What is the thermal performance limit during repeated ESD strikes?

Under IEC 61000-4-2 testing conditions (1 pulse/sec), junction temperature rise remains within safe limits due to short pulse duration (<100 ns). However, sustained repetitive surges (>10 Hz) require thermal derating per Figure 2 in DS12595: at 125 °C ambient, peak pulse power drops to ~3200 W. Ensure adequate copper area and via count beneath the exposed pad for reliable thermal management.