STMicroelectronics ESDA6V1SC5

Overview

ESDA6V1SC5 from STMicroelectronics is a quad unidirectional Transil™ ESD protection array in SOT23-5L package, designed to clamp transient overvoltages on data lines to ±5.25 V (clamping voltage at 18 A), with 6.1 V minimum breakdown voltage, 400 W peak pulse power (8/20 µs), and 190 pF capacitance at 0 V bias - deployed in cellular phone handsets and USB interfaces for IEC 61000-4-2 level 4 compliance.

For engineers reviewing the ESDA6V1SC5 datasheet, ESDA6V1SC5 pinout, ESDA6V1SC5 application, or ESDA6V1SC5 equivalent, key selection criteria include clamping voltage under 18 A stress, leakage current ≤2 µA at 5.25 V, thermal stability across –55 °C to +150 °C junction range, and compatibility with high-density PCB layouts requiring <2 mm² footprint.

Technical Context

The ESDA6V1SC5 integrates four independent unidirectional avalanche diodes in a monolithic silicon structure, each configured as a cathode-to-rail clamp for positive transients and anode-to-ground clamp for negative transients. Its dynamic resistance of 6 Ω ensures low-voltage overshoot during fast ESD events.

It operates within a stand-off voltage window of 5.25 V (VRM), triggers at ≥6.1 V (VBR min), and maintains ≤1 µA leakage up to VRM. The device meets MIL-STD-883E Class 3B HBM and IEC 61000-4-2 ±30 kV air/contact discharge requirements without external biasing.

Key Specifications

Pinout & Package

SOT23-5L (SC-59) package: 2.80–3.05 mm × 1.50–1.75 mm footprint, 1.10 mm height, lead-free ECOPACK® compliant, UL94 V0 epoxy, 260 °C soldering tolerance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESDA6V1SC6, the ESDA6V1SC5 offers smaller footprint and lower cost but lacks dedicated power pin separation; versus TPD2E001DRYR, it delivers higher ESD robustness (30 kV vs. 15 kV) at the expense of bandwidth due to higher capacitance.

Availability

ESDA6V1SC5 is available at Aetrix Electronics and suitable for USB interface protection, mobile handset I/O safeguarding, industrial serial port hardening, and set-top box remote control line conditioning requiring stable component supply across extended temperature ranges.

Supply support for ESDA6V1SC5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and protection devices for industrial, automotive, and consumer markets.

The ESDAxxSCx series targets compact, high-reliability ESD suppression in space-constrained portable and connectivity equipment - emphasizing low clamping voltage, standardized compliance, and drop-in replaceability across voltage grades.

FAQ

What is the maximum recommended trace length between ESDA6V1SC5 and the protected IC?

Trace length should not exceed 5 mm from ESDA6V1SC5 Pin 1/4 to the protected signal pin, and Pin 2/5 must connect directly to the local VCC plane with a dedicated via to minimize inductance. Longer traces increase clamping voltage overshoot during 1 ns rise-time ESD events, risking IC damage despite rated 30 kV immunity.

Can ESDA6V1SC5 protect bidirectional data lines like I²C without signal distortion?

Yes - its unidirectional architecture protects both high-to-low and low-to-high transitions by clamping positive excursions to VCC + 0.7 V and negative excursions to GND – 0.7 V. At 190 pF and ≤2 µA leakage, it maintains I²C timing integrity up to 400 kHz standard mode without pull-up resistor recalibration.

Does ESDA6V1SC5 require external biasing or series resistors for USB D+/D– protection?

No external biasing is needed - the device operates passively. A 27 Ω series resistor is recommended between ESDA6V1SC5 and the USB transceiver to limit diode conduction current during clamping, preventing localized heating. This resistor does not affect USB 2.0 signal integrity due to controlled impedance routing.

How does temperature affect the breakdown voltage of ESDA6V1SC5?

VBR increases linearly with junction temperature at +0.0001 V/°C (αT = 10⁻⁴ /°C). At 125 °C junction, VBR rises by 0.01 V versus 25 °C - negligible for system-level design. Clamping voltage VCL remains stable across –55 °C to +150 °C, verified per Figure 5 in the datasheet.