STMicroelectronics ESDA8P80-1U1M
- Part No.:
- ESDA8P80-1U1M
- Manufacturer:
- STMicroelectronics
- Category:
- TVS Diodes
- Package:
- 2-UDFN
- Datasheet:
-
ESDA8P80-1U1M.pdf
- Description:
- TVS DIODE 6.3VWM 13.2VC 1610
- Quantity:
- Payment:

- Shipping:

Inventory:5,302
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ESDA8P80-1U1M from STMicroelectronics is a unidirectional transient voltage suppressor (TVS) diode designed for I/O or power line ESD and EOS protection in space-constrained applications. It features 6.3 V stand-off voltage, 1.0 µA reverse leakage at VRM, 7.3 V typical breakdown voltage at 1 mA, 13.2 V clamping voltage at 80 A (8/20 µs), and 480 pF line capacitance - optimized for USB Type-C Vbus and USB-PD up to 20 V protection.
For engineers reviewing the ESDA8P80-1U1M datasheet, ESDA8P80-1U1M pinout, ESDA8P80-1U1M application, or ESDA8P80-1U1M equivalent, key selection criteria include clamping performance under 80 A surge, low dynamic resistance (0.06 Ω), thermal stability up to 150 °C junction temperature, and QFN-2L footprint compatibility with high-density PCB layouts.
Technical Context
This TVS diode operates as a single-line unidirectional clamp, with anode-cathode configuration enabling fast turn-on during ESD transients (IEC 61000-4-2 ±30 kV contact/air) and lightning surges (IEC 61000-4-5, 8/20 µs up to 120 A). Its low dynamic resistance (0.06 Ω) ensures minimal voltage overshoot during high-current events.
The device uses silicon avalanche structure with controlled doping and geometry to deliver stable clamping across -55 °C to +150 °C operating junction temperature, with negligible derating up to Tj = 150 °C - critical for automotive and industrial power rail protection where thermal margin is constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VRM) | 6.3 V - maximum continuous reverse voltage before leakage exceeds 1.0 µA; sets safe operating margin below protected line's nominal voltage (e.g., 5 V or 9 V rails). |
| Breakdown Voltage (VBR) | 7.3 V typ. at 1 mA - precise avalanche onset ensures predictable triggering without premature conduction during normal operation. |
| Clamping Voltage (VCL) | 13.2 V at 80 A (8/20 µs) - limits transient overvoltage to safe levels for downstream ICs such as USB-PD controllers or battery management ICs. |
| Dynamic Resistance (RD) | 0.06 Ω - low impedance during surge enables efficient energy shunting and minimizes voltage rise ΔV = RD × IPP. |
| Line Capacitance (CI/O-GND) | 480 pF at 1 MHz - balances ESD robustness with signal integrity for DC-biased lines like USB Vbus, avoiding excessive bandwidth degradation. |
| ESD Rating | ±30 kV contact & air discharge (IEC 61000-4-2 Level 4) - exceeds industrial and medical equipment immunity requirements without external filtering. |
| Surge Rating | 120 A (8/20 µs, IEC 61000-4-5) - supports lightning-induced transients on power inputs in harsh environments including industrial and medical systems. |
Pinout & Package
ESDA8P80-1U1M is housed in a compact QFN-2L package measuring 1.6 mm × 1.0 mm × 0.55 mm (height), with exposed pad for thermal dissipation and solderable terminals on opposite edges. The 75% smaller footprint versus SOD-123FL enables high-density routing in portable and miniaturized designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Connected to protected line (e.g., USB Vbus); conducts during positive transients when cathode is grounded or referenced to lower potential. |
| Pin 2 | Cathode | Connected to ground or low-impedance return path; establishes unidirectional clamping direction and defines reference for stand-off and breakdown behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional Clamping Architecture | Enables precise protection of positive-only power rails (e.g., Vbus) without reverse conduction risk or signal distortion on bidirectional data lines. |
| Low Dynamic Resistance (0.06 Ω) | Reduces clamping voltage overshoot under high-current surges, preserving voltage margin for 5 V–20 V system components. |
| 150 °C Maximum Junction Temperature | Supports operation in thermally demanding environments (e.g., enclosed medical enclosures or industrial power modules) without derating loss. |
| ECOPACK2 ROHS Compliance & MSL Level 1 | Enables lead-free reflow assembly without moisture sensitivity concerns, eliminating bake requirements and supporting automated high-volume manufacturing. |
| 480 pF Line Capacitance | Minimizes impact on DC power rail impedance while maintaining robust ESD immunity - suitable for USB-PD 20 V charging paths. |
Applications
| USB Type-C Vbus Protection | USB-PD Power Delivery Line |
|---|---|
Use Scenario: Protecting the 5–20 V Vbus line in USB Type-C connectors against ESD events during hot-plug and cable handling. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between Vbus and GND, clamping transients before they reach the USB-PD controller or power switch. Use Value: Prevents latch-up or damage to PD controllers (e.g., STUSB4500) by limiting clamping voltage to 13.2 V at 80 A, well below absolute maximum ratings. | Use Scenario: Safeguarding the 20 V power delivery path in portable chargers and power banks compliant with USB-PD 3.0 specification. IC Role / Device Role / Timing Role: Standoff-rated (6.3 V) TVS positioned upstream of buck-boost converters to absorb EOS from adapter mismatches or load dumps. Use Value: Maintains system uptime by surviving ±30 kV ESD strikes and 120 A lightning surges without aging or parameter drift over lifetime. |
| Battery Charger Port Protection | Industrial Power Supply Input |
Use Scenario: Shielding lithium-ion battery charger ports (e.g., in medical wearables or handheld test equipment) from user-induced ESD during connector insertion. IC Role / Device Role / Timing Role: Low-capacitance (480 pF) unidirectional clamp on the input side of linear or switching charger ICs (e.g., STBC08). Use Value: Ensures reliable charging functionality after repeated ±30 kV contact discharges, with no measurable degradation in clamping performance. | Use Scenario: Protecting 12–24 V DC input stages of programmable logic controllers (PLCs) and sensor interface modules against field-installed surge coupling. IC Role / Device Role / Timing Role: High-surge-capable (120 A, 8/20 µs) TVS mounted at board edge, coordinated with upstream MOVs or gas discharge tubes for multi-stage protection. Use Value: Extends mean time between failures (MTBF) by absorbing >700 W peak pulse power without thermal runaway or bond wire failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESDA7P120-1U1M | Lower VRM (5.5 V), higher IPP (120 A), lower RD (0.035 Ω), higher capacitance (800 pF) | Better suited for 5 V logic rails or low-voltage USB 2.0 data lines where tighter clamping and higher surge current are prioritized over capacitance | Select when protecting sub-6 V lines requiring <10 V clamping at 100 A, accepting higher line capacitance trade-off |
| ESDA13P70-1U1M | Higher VRM (12.0 V), lower IPP (70 A), higher RD (0.09 Ω), lower capacitance (390 pF) | Optimized for 12 V power rails (e.g., automotive body electronics or industrial sensors) where lower capacitance and higher standoff are critical | Select for 12 V systems needing <20 V clamping at 70 A and reduced capacitive loading on analog or RF-sensitive circuits |
Compared with ESDA7P120-1U1M and ESDA13P70-1U1M, ESDA8P80-1U1M delivers balanced performance for 6–9 V intermediate rails - offering superior capacitance-to-clamping ratio (480 pF / 13.2 V) and optimal thermal margin for USB-PD and battery charger use cases.
Availability
ESDA8P80-1U1M is available at Aetrix Electronics and suitable for USB Type-C Vbus protection, USB-PD power delivery lines, and battery charger port protection requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for ESDA8P80-1U1M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and protection components for industrial, automotive, and consumer markets.
The ESDAxxPxxx-1U1M series was developed specifically for board-level transient suppression in high-reliability portable and industrial electronics, emphasizing low clamping, thermal stability, and ultra-compact packaging for next-generation power interfaces.
FAQ
What is the maximum continuous reverse voltage rating for ESDA8P80-1U1M?
The maximum continuous reverse voltage (stand-off voltage) is 6.3 V, defined as VRM - the highest DC or RMS voltage that can be continuously applied without exceeding 1.0 µA reverse leakage current. This rating ensures safe operation on 5 V or 9 V power rails while maintaining sufficient margin before avalanche conduction begins.
How does ESDA8P80-1U1M perform under high-temperature operating conditions?
ESDA8P80-1U1M maintains full specified performance from -55 °C to +150 °C junction temperature, with no derating required up to Tj = 150 °C. Its low dynamic resistance (0.06 Ω) and stable clamping voltage (13.2 V at 80 A) remain consistent across this range, validated per JESD22-A108 and IEC 61000-4-5 thermal cycling protocols.
Can ESDA8P80-1U1M be used for bidirectional signal line protection?
No - ESDA8P80-1U1M is strictly unidirectional and must be connected with Pin 1 (anode) to the protected line and Pin 2 (cathode) to ground. For bidirectional data lines (e.g., USB D+/D− or HDMI), a symmetric dual-diode array or dedicated bidirectional TVS (e.g., ESDALYV5-1U1M) is required to prevent forward conduction during negative transients.
Is the QFN-2L package of ESDA8P80-1U1M compatible with standard reflow profiles?
Yes - the device complies with J-STD-020 MSL Level 1 and is qualified for standard lead-free reflow profiles, including ST's recommended 240–245 °C peak temperature profile with ≤60 s above 220 °C. Its ECOPACK2 construction eliminates moisture sensitivity concerns, enabling direct placement without pre-bake.
ESDA8P80-1U1M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Package/Case:
- 2-UDFN
- Series:
- ESDA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.3V
- Voltage - Breakdown (Min):
- 6.9V
- Voltage - Clamping (Max) @ Ipp:
- 13.2V
- Current - Peak Pulse (10/1000µs):
- 80A (8/20µs)
- Power - Peak Pulse:
- 1100W (1.1kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1610
ESDA8P80-1U1M FAQ
1.How can I place an order for ESDA8P80-1U1M through Aetrix?
Please submit a Request for Quotation (RFQ) for ESDA8P80-1U1M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESDA8P80-1U1M reliable?
The price and inventory of ESDA8P80-1U1M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESDA8P80-1U1M is usually 5 days.
3.What payment methods are accepted for ESDA8P80-1U1M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESDA8P80-1U1M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESDA8P80-1U1M?
ESDA8P80-1U1M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESDA8P80-1U1M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESDA8P80-1U1M?
For technical support, including ESDA8P80-1U1M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESDA8P80-1U1M requirements.
6.How does Aetrix verify that ESDA8P80-1U1M is sourced from the original manufacturer or authorized distributors?
All ESDA8P80-1U1M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESDA8P80-1U1M meets industry standards.
7.What is the process for return or replacement of ESDA8P80-1U1M?
All ESDA8P80-1U1M units undergo pre-shipment inspection (PSI). If there is an issue with ESDA8P80-1U1M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESDA8P80-1U1M part is unused and in its original packaging.
Return procedure for ESDA8P80-1U1M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESDA8P80-1U1M Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

