STMicroelectronics ESDALC6V1M3

Overview

ESDALC6V1M3 from STMicroelectronics is a dual unidirectional low-capacitance Transil™ ESD protection array in SOT883 package, designed for high-speed data line protection with 6.1 V min breakdown voltage, 11 pF typical capacitance at 0 V, and 11 kV contact/15 kV air discharge ESD immunity per IEC 61000-4-2 Level 4 - used in cellular handset I/O interfaces.

For engineers reviewing the ESDALC6V1M3 datasheet, ESDALC6V1M3 pinout, ESDALC6V1M3 application, or ESDALC6V1M3 equivalent, key selection criteria include line capacitance impact on signal integrity, clamping voltage under 8/20 µs transients, thermal derating of peak pulse power, and PCB area constraints in ultra-compact mobile designs.

Technical Context

The device integrates two monolithic silicon avalanche diodes in a single SOT883 package, each configured as a grounded-cathode unidirectional TVS with defined stand-off (5 V), breakdown (6.1–7.2 V), and clamping (≤11 V @ 3 A) characteristics. Its low 11 pF junction capacitance enables use on USB 2.0, HDMI, and MIPI D-PHY lines without signal degradation.

It operates across –40 °C to +125 °C junction temperature, with leakage <0.5 µA at 5 V and dynamic impedance <1 Ω, enabling fast response (<1 ns) to ESD events while maintaining low insertion loss and minimal crosstalk (<–90 dB up to 1 GHz) between channels.

Key Specifications

Pinout & Package

ESDALC6V1M3 uses the SOT883 (JEDEC MO-236AA) 3-pin ultra-miniature surface-mount package with exposed die pad not connected internally. Pin 1 and Pin 2 are I/O terminals for Channel 1 and Channel 2 respectively; Pin 3 is common GND for both diodes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD2E001DRYR and ESD9X5.0ST5G, ESDALC6V1M3 delivers superior ESD immunity (11 kV contact) and tighter capacitance control (11 pF) in a single dual-channel package - critical for space-constrained, high-data-rate mobile interfaces where board area and signal fidelity are co-constrained.

Availability

ESDALC6V1M3 is available at Aetrix Electronics and suitable for cellular handset front-panel interfaces, USB 2.0 OTG accessories, HDMI Type-C docking solutions, and MIPI D-PHY camera modules requiring stable component supply and long-term production continuity.

Supply support for ESDALC6V1M3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and protection devices for industrial, automotive, and consumer markets.

ESDALC6V1M3 belongs to ST's Transil™ ESD protection portfolio, engineered specifically for ultra-low-capacitance, high-density board-level transient suppression in portable and high-speed interface applications.

FAQ

What is the maximum recommended PCB trace length between ESDALC6V1M3 and the protected connector?

Trace length should be ≤3 mm from device pin to connector pad to minimize inductance and ensure effective clamping. Longer traces increase voltage overshoot during ESD events due to L·di/dt; measured overshoot exceeds 15 V when trace exceeds 5 mm on standard FR-4 with 3 A 8/20 µs pulse.

Can ESDALC6V1M3 be used for bidirectional signal lines like USB D+/D−?

Yes - its dual unidirectional configuration (anode-to-I/O, cathode-to-GND per channel) provides symmetrical clamping for bidirectional data lines when both channels are used with shared GND. Measured crosstalk is <–90 dB up to 1 GHz, preserving differential signaling integrity.

Does ESDALC6V1M3 require external series resistance for optimal protection?

No external resistor is required for basic ESD compliance. However, a 0–10 Ω series resistor may be added to limit peak current during very high-energy surges (e.g., MIL-STD-883 HBM >2 kV), though this increases total clamping voltage and is unnecessary for IEC 61000-4-2 Level 4 compliance.

How does junction temperature affect clamping voltage performance?

Clamping voltage increases by ~0.04 %/°C above 25 °C due to positive temperature coefficient of silicon avalanche breakdown. At +125 °C, clamping rises ~4% - from 11 V to ~11.4 V @ 3 A - remaining safely below 12 V absolute maximum for most 5 V tolerant interfaces.