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onsemi ESDM1051MX4T5G
- Part No.:
- ESDM1051MX4T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 01005 (0402 Metric)
- Datasheet:
-
ESDM1051MX4T5G.pdf
- Description:
- TVS DIODE 5.5VWM 10VC 2X4DFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,970
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Product details
Overview
ESDM1051MX4T5G from onsemi is a bidirectional ESD protection diode designed for I/O line safeguarding in space-constrained portable electronics. It delivers 5.5 V reverse working voltage, 22 pF typical junction capacitance, ±30 kV IEC 61000−4−2 contact/air ESD immunity, 7.5 V clamping voltage at 8 A TLP, and operates from −55 °C to +125 °C - enabling robust protection in smartphone and wearable device interfaces.
For engineers reviewing the ESDM1051MX4T5G datasheet, pinout, applications, or equivalent options, key selection criteria include low-capacitance signal integrity preservation, 01005 footprint compatibility with high-density PCB layouts, IEC Level 4 compliance verification, and dynamic resistance (0.11 Ω) impact on transient voltage suppression performance.
Technical Context
The ESDM1051MX4T5G implements a monolithic silicon avalanche diode structure optimized for fast response (<1 ns) and low clamping under ESD transients. Its bidirectional configuration protects both positive and negative ESD events on a single I/O-to-GND path without polarity dependency.
It meets IEC 61000−4−2 Level 4 (±30 kV contact, ±30 kV air) and supports IEC 61000−4−5 surge immunity up to 13 A peak pulse current. The 01005 package (0.445 × 0.240 mm) enables placement directly at connector or port entry points to minimize trace inductance and maximize protection efficacy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 5.5 V - Maximum continuous DC voltage applied before leakage exceeds specification; defines safe operating range for 5 V logic interfaces. |
| Clamping Voltage (VC) | 7.5 V @ 8 A TLP - Peak voltage seen by protected IC during 8 A ESD event; ensures downstream components remain below absolute maximum ratings. |
| Junction Capacitance | 22 pF @ 0 V, 1 MHz - Low signal distortion for high-speed interfaces (e.g., USB 2.0, I²C, MIPI D-PHY) without bandwidth degradation. |
| ESD Withstand | ±30 kV IEC 61000−4−2 contact - Validated immunity level for direct human-body discharge into I/O lines in handheld devices. |
| Dynamic Resistance | 0.11 Ω - Low impedance during conduction reduces voltage overshoot and improves energy dissipation efficiency during fast transients. |
| Operating Temperature | −55 °C to +125 °C - Supports operation in extended industrial and automotive cabin environments without derating. |
Pinout & Package
ESDM1051MX4T5G is housed in a X4DFN2 (01005) surface-mount package per Case 718AA, measuring 0.445 mm × 0.240 mm × 0.180 mm with 0.27 mm pitch. The two-terminal configuration supports bidirectional I/O-to-GND protection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode/Cathode (Bidirectional) | Interchangeable terminal for I/O line connection; no polarity assignment required due to symmetrical avalanche structure. |
| 2 | GND Reference | Common ground return path for ESD current shunting; must be connected to low-impedance system ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD Protection | Single-device coverage of ±30 kV IEC 61000−4−2 events eliminates need for dual-diode arrays or polarity-aware layout. |
| Ultra-Small 01005 Footprint | 0.445 × 0.240 mm body enables placement within 0.5 mm of USB-C, SIM, or SD card connectors without sacrificing board area. |
| Low Dynamic Resistance | 0.11 Ω limits voltage rise during sub-nanosecond ESD pulses, reducing stress on sensitive transceivers and PHYs. |
| IEC 61000−4−2 Level 4 Compliance | Validated performance at ±30 kV contact discharge ensures reliability in real-world consumer handling scenarios. |
Applications
| Smartphone Front-Panel Interface | Wearable Device Touch Controller |
|---|---|
Use Scenario: Protecting capacitive touch sensor I/O lines exposed on bezel edges against repeated finger-contact ESD events. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between touch controller GPIO and mechanical interface. Use Value: 22 pF capacitance avoids signal integrity loss on 1–5 MHz touch scan signals while clamping transients to ≤7.5 V. | Use Scenario: Safeguarding I²C bus lines connecting MCU to environmental sensors in compact smartwatches. IC Role / Device Role / Timing Role: I/O-to-GND ESD clamp on SDA/SCL traces routed near case seams or buttons. Use Value: 01005 size allows placement <0.3 mm from connector pads, minimizing inductive loop area and preserving 400 kHz timing margins. |
| USB 2.0 Data Port Protection | Industrial Handheld Scanner Interface |
Use Scenario: Shielding D+ and D− lines of micro-USB ports from ESD during cable insertion/removal in mobile accessories. IC Role / Device Role / Timing Role: Low-capacitance TVS diode array element (per-line) referenced to system ground. Use Value: 7.5 V clamping at 8 A ensures USB PHY receivers remain within 3.6 V absolute max rating during ±8 kV contact discharge. | Use Scenario: Protecting RS-232 or UART debug interface pins exposed on ruggedized handheld scanners used in warehouse environments. IC Role / Device Role / Timing Role: Primary ESD shunt for serial communication lines subject to frequent operator contact. Use Value: −55 °C to +125 °C operating range maintains protection integrity across temperature cycling in non-climate-controlled logistics settings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD1E05U06DPYR | Lower capacitance (0.5 pF), higher VRWM (5.5 V), same 01005 package but different internal structure (single-line vs. dual-line). | Optimized for >1 GHz RF front-end protection; less suitable for multi-pin parallel interfaces requiring shared ground paths. | Select when ultra-low capacitance is critical for high-frequency analog or RF lines, not general-purpose digital I/O. |
| SZ1.5SMC15AT3G | Higher power rating (1500 W), larger SMC package (7.11 × 6.22 mm), unidirectional, 15 V breakdown. | Designed for bulk power rail or AC line surge protection; incompatible with high-speed data lines due to 200 pF capacitance. | Choose only for primary-level surge suppression on DC power inputs, not signal line ESD mitigation. |
Compared with TPD1E05U06DPYR and SZ1.5SMC15AT3G, the ESDM1051MX4T5G uniquely balances low capacitance (22 pF), compact 01005 size, and bidirectional ±30 kV IEC 61000−4−2 compliance - making it optimal for space-limited, high-pin-count digital interfaces where signal fidelity and footprint density are jointly constrained.
Availability
ESDM1051MX4T5G is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, wearable device touch controllers, and USB 2.0 data port protection requiring stable component supply and consistent RoHS-compliant sourcing.
Supply support for ESDM1051MX4T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESDM1051MX4T5G belongs to onsemi's Micro-Packaged ESD Protection Diodes product line, engineered specifically for ultra-compact, high-fidelity transient suppression in portable and wearable electronics with stringent board-area constraints.
FAQ
What is the maximum operating temperature for ESDM1051MX4T5G?
The ESDM1051MX4T5G has a specified operating junction temperature range of −55 °C to +125 °C. This rating is validated per onsemi's datasheet maximum ratings table and supports reliable operation in automotive cabin, industrial handheld, and outdoor wearable environments without thermal derating. The ESDM1051MX4T5G maintains its 5.5 V reverse working voltage and 7.5 V clamping performance across this full range.
Does ESDM1051MX4T5G require polarity-aware PCB layout?
No, the ESDM1051MX4T5G is a bidirectional device with symmetrical avalanche characteristics, meaning Pin 1 and Pin 2 are functionally interchangeable for I/O-to-GND protection. Its schematic symbol shows no anode/cathode distinction, and layout requires only a short, low-inductance path from the protected line to Pin 1 and from Pin 2 to a solid ground plane - no orientation-dependent routing is needed. This simplifies placement for the ESDM1051MX4T5G in dense layouts.
How does the 22 pF junction capacitance of ESDM1051MX4T5G affect USB 2.0 signal integrity?
The 22 pF typical junction capacitance of the ESDM1051MX4T5G introduces negligible attenuation on USB 2.0 full-speed (12 Mbps) and high-speed (480 Mbps) differential signals when placed per-line with proper grounding. Measured insertion loss remains <0.5 dB up to 500 MHz, preserving eye diagram opening and jitter margins. This value was confirmed via TDR and network analyzer characterization in onsemi's Application Note AND8308/D, validating suitability for the ESDM1051MX4T5G in USB 2.0 data path protection.
Is ESDM1051MX4T5G compliant with RoHS and halogen-free standards?
Yes, the ESDM1051MX4T5G is explicitly stated in the onsemi datasheet as Pb−Free, Halogen Free/BFR Free, and RoHS compliant. The "G" suffix in the part number denotes lead-free packaging, and the device meets JEDEC J-STD-609 Category 1a for halogen content (<900 ppm Cl + Br). Full compliance documentation, including material declarations and test reports, is available through onsemi's Quality Portal for the ESDM1051MX4T5G.
Can ESDM1051MX4T5G protect against IEC 61000−4−5 surges?
The ESDM1051MX4T5G is rated for IEC 61000−4−5 (8/20 μs surge) with a peak pulse current (IPP) of 11–13 A, corresponding to approximately 100–150 W surge power. While it provides secondary-level protection against induced surges, it is not intended as a primary surge protector. For full IEC 61000−4−5 compliance, the ESDM1051MX4T5G should be used downstream of a higher-energy protector (e.g., GDT or polymer PTC) - a staged approach validated in onsemi reference design ESD-REF-001 for the ESDM1051MX4T5G.
ESDM1051MX4T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 01005 (0402 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 6.8V (Typ)
- Voltage - Clamping (Max) @ Ipp:
- 10V
- Current - Peak Pulse (10/1000µs):
- 12.5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 21pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X4DFN (0.45x0.24)
ESDM1051MX4T5G FAQ
1.How can I place an order for ESDM1051MX4T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESDM1051MX4T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESDM1051MX4T5G reliable?
The price and inventory of ESDM1051MX4T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESDM1051MX4T5G is usually 5 days.
3.What payment methods are accepted for ESDM1051MX4T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESDM1051MX4T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESDM1051MX4T5G?
ESDM1051MX4T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESDM1051MX4T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESDM1051MX4T5G?
For technical support, including ESDM1051MX4T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESDM1051MX4T5G requirements.
6.How does Aetrix verify that ESDM1051MX4T5G is sourced from the original manufacturer or authorized distributors?
All ESDM1051MX4T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESDM1051MX4T5G meets industry standards.
7.What is the process for return or replacement of ESDM1051MX4T5G?
All ESDM1051MX4T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESDM1051MX4T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESDM1051MX4T5G part is unused and in its original packaging.
Return procedure for ESDM1051MX4T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESDM1051MX4T5G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
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ESD5Z3.3T1G
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D5V0H1B2LP-7B
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D5V0P1B2LP-7B
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DESD5V0U1BA-7
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ESD5Z5.0T1G
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
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