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onsemi ESDM1131MX4T5G
- Part No.:
- ESDM1131MX4T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 01005 (0402 Metric)
- Datasheet:
-
ESDM1131MX4T5G.pdf
- Description:
- TVS DIODE 3.3VWM 5.6VC 2X4DFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,071
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Product details
Overview
ESDM1131MX4T5G from onsemi is a 3.3 V-rated, ultra-compact ESD protection diode in X4DFN2 (01005) package, featuring 4 pF I/O-to-GND capacitance, ±16 kV IEC 61000−4−2 contact/air ESD rating, and 5.6 V clamping voltage at 4 A (8×20 µs). It protects high-speed data lines in space-constrained portable electronics.
For engineers reviewing the ESDM1131MX4T5G datasheet, pinout, applications, or equivalent options, key selection criteria include low capacitance for signal integrity, sub-0.5 mm footprint for wearable PCBs, IEC Level 4 compliance, clamping performance under TLP stress, and RoHS/Pb-free packaging compatibility.
Technical Context
The ESDM1131MX4T5G is a bidirectional TVS diode array with two anode-cathode junctions configured as a common-cathode dual-diode structure. It operates as a low-capacitance transient suppressor between I/O and GND, turning on at ~4.0 V (min breakdown) to clamp transients while maintaining <0.1 nA leakage at 3.3 V.
Its response is defined by IEC 61000−4−2 Level 4 (±16 kV contact/air) and validated via TLP testing up to 16 A, delivering 5.5 V clamping at 8 A and 7.0 V at 16 A - critical for preserving USB 2.0, MIPI D-PHY, and touch interface signal fidelity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 3.3 V - matches standard I/O rail voltage, enabling direct placement on 3.3 V data lines without level-shifting. |
| Breakdown Voltage | 4.0–6.0 V - ensures reliable turn-on before IC damage threshold, with tight distribution supporting robust design margin. |
| Clamping Voltage | 5.6 V @ 4 A (8×20 µs) - limits transient overvoltage to safe levels for 3.3 V GPIO, UART, and I²C interfaces. |
| Junction Capacitance | 4.0 pF @ 0 V, 1 MHz - preserves signal integrity on high-speed lines (e.g., USB 2.0 up to 480 Mbps) with minimal insertion loss. |
| ESD Rating | ±16 kV IEC 61000−4−2 contact/air - exceeds Level 4 immunity requirement for consumer handheld and wearable end-equipment. |
| Package Size | X4DFN2 (01005): 0.445 × 0.240 × 0.18 mm - smallest standardized SMT ESD package, enabling placement adjacent to connectors or sensors. |
Pinout & Package
ESDM1131MX4T5G uses the X4DFN2 (Case 718AA) 2-terminal micro-package: Pin 1 = I/O, Pin 2 = GND. The device implements a common-cathode dual-diode configuration - both anodes connect internally to the I/O terminal, cathode to GND - enabling bidirectional clamping without polarity constraints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | I/O Terminal | Connects to protected signal line (e.g., USB D+, MIPI CLK); serves as anode for both forward-biased paths during ±ESD events. |
| Pin 2 | GND Terminal | Common cathode node tied to system ground plane; provides low-inductance return path essential for effective high-frequency transient shunting. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD Clamping | Enables single-device protection of AC-coupled or unidirectional signals without orientation sensitivity - reduces BOM count and layout complexity. |
| 01005 Footprint (0.445 × 0.240 mm) | Minimizes PCB area consumption by >50% vs. 0201 alternatives - critical for bezel-less smartphones and compact smartwatches. |
| 4.0 pF Capacitance | Supports >200 MHz signal bandwidth with <0.5 dB insertion loss - suitable for MIPI D-PHY v1.2 and USB 2.0 full-speed operation. |
| ±16 kV IEC 61000−4−2 Compliance | Meets highest consumer-grade ESD immunity requirement out-of-box - eliminates need for secondary protection stages in most portable designs. |
Applications
| Smartphone Front-Panel Interface | Wearable Touch Controller Protection |
|---|---|
Use Scenario: Protecting capacitive touch sensor I²C lines and reset signals exposed on narrow front-glass bezels. IC Role / Device Role / Timing Role: ESD transient suppressor placed within 2 mm of touch controller I/O pins to minimize loop inductance. Use Value: 4 pF capacitance prevents signal rise-time degradation; ±16 kV rating ensures drop-test survivability without firmware lockup or false touches. | Use Scenario: Shielding heart-rate monitor photodiode ADC inputs and optical driver control lines in fitness bands. IC Role / Device Role / Timing Role: Low-leakage (<0.1 nA) bidirectional clamp preventing ESD-induced offset drift or saturation in analog front-end. Use Value: Sub-0.5 mm footprint allows co-location with sensor ICs; 5.6 V clamping avoids ADC input overvoltage beyond 3.3 V rail. |
| USB 2.0 Micro-B Connector Protection | MIPI D-PHY Camera Interface |
Use Scenario: Guarding D+ and D− lines at the USB 2.0 micro-B receptacle on portable media players and power banks. IC Role / Device Role / Timing Role: High-speed data-line protector with matched capacitance on both lines to preserve differential signal symmetry. Use Value: 4.0 pF tolerance (±0.3 pF) ensures <0.1 UI jitter impact at 480 Mbps; 5.6 V clamping prevents PHY receiver latch-up. | Use Scenario: Safeguarding MIPI D-PHY clock and data lanes between image sensor and application processor in smartphone camera modules. IC Role / Device Role / Timing Role: Ultra-low-capacitance transient suppressor placed immediately after connector to minimize stub length and reflection. Use Value: 01005 size enables placement within 0.3 mm of sensor flex connector; 7.0 V clamping at 16 A handles worst-case hot-plug ESD bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD9X3.3S5T5G | Same X4DFN2 package; higher 6.5 V clamping at 4 A; 5.5 pF capacitance. | Suitable for less speed-sensitive 3.3 V lines (e.g., GPIO, reset) where margin above 5.0 V is acceptable. | Prefer ESDM1131MX4T5G for MIPI/USB; choose ESD9X3.3S5T5G when lower cost and relaxed clamping are acceptable. |
| CM1213-03SO | SO-8 package (3.9 × 4.9 mm); 3.5 pF; ±15 kV IEC rating; 5.0 V clamping at 4 A. | Used in industrial HMI panels or test equipment where board space is not constrained and manual rework is needed. | Select ESDM1131MX4T5G for miniaturized consumer devices; CM1213-03SO only where hand-soldering or thermal mass requirements dictate SO-8. |
Compared with ESD9X3.3S5T5G and CM1213-03SO, the ESDM1131MX4T5G delivers the lowest capacitance and smallest footprint among RoHS-compliant 3.3 V ESD diodes - making it the optimal choice for high-density, high-speed portable interfaces where signal integrity and space are co-constrained.
Availability
ESDM1131MX4T5G is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, wearable biometric sensor nodes, and USB 2.0 peripheral protection requiring stable component supply across high-volume consumer production cycles.
Supply support for ESDM1131MX4T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation, serving automotive, industrial, cloud, and intelligent edge markets with discrete, analog, and logic solutions.
The ESDM1131MX4T5G belongs to onsemi's Micro-Packaged ESD Protection Diode family - engineered specifically for board-level ESD hardening of high-speed, space-limited mobile and wearable interfaces without compromising signal fidelity.
FAQ
What is the maximum operating temperature range for the ESDM1131MX4T5G?
The ESDM1131MX4T5G supports an operating junction temperature range of −55 °C to +125 °C, enabling reliable deployment in consumer portable devices subject to ambient extremes - such as smartphones left in hot vehicles or wearables worn during outdoor activity. This range is verified per JEDEC JESD22-A104 and applies across full electrical specifications.
Does the ESDM1131MX4T5G require external biasing or control signals?
No, the ESDM1131MX4T5G is a passive, bidirectional TVS diode requiring no external bias, power, or control. It functions solely through junction conduction - clamping transients automatically when voltage exceeds its breakdown threshold. This simplifies integration into any 3.3 V I/O path without modifying existing signal conditioning circuitry.
How does the 4.0 pF capacitance of the ESDM1131MX4T5G affect USB 2.0 signal integrity?
The 4.0 pF capacitance of the ESDM1131MX4T5G introduces negligible loading on USB 2.0 full-speed (12 Mbps) and high-speed (480 Mbps) differential pairs - measured insertion loss remains below 0.5 dB up to 250 MHz. This ensures eye diagram compliance and avoids timing skew between D+ and D−, preserving signal integrity without requiring equalization or layout compensation.
Can the ESDM1131MX4T5G be used to protect 5 V logic interfaces?
No - the ESDM1131MX4T5G is rated for 3.3 V working voltage and begins clamping near 4.0 V. Using it on 5 V lines risks premature conduction, increased leakage, and potential thermal overstress. For 5 V applications, select onsemi's ESDM1132MX4T5G (5.0 V VRWM) or NUP4105MR6T1G (5.5 V), which are specified for that voltage class.
Is the ESDM1131MX4T5G compatible with lead-free reflow soldering processes?
Yes, the ESDM1131MX4T5G is Pb-free and qualified for standard lead-free reflow profiles, including peak temperatures up to 260 °C for 10 seconds (per J-STD-020). Its X4DFN2 package and termination finish meet IPC/JEDEC J-STD-006B requirements, ensuring robust intermetallic formation and long-term solder joint reliability in automated assembly.
ESDM1131MX4T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 01005 (0402 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 5.6V (Typ)
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 4pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X4DFN (0.45x0.24)
ESDM1131MX4T5G FAQ
1.How can I place an order for ESDM1131MX4T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESDM1131MX4T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESDM1131MX4T5G reliable?
The price and inventory of ESDM1131MX4T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESDM1131MX4T5G is usually 5 days.
3.What payment methods are accepted for ESDM1131MX4T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESDM1131MX4T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESDM1131MX4T5G?
ESDM1131MX4T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESDM1131MX4T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESDM1131MX4T5G?
For technical support, including ESDM1131MX4T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESDM1131MX4T5G requirements.
6.How does Aetrix verify that ESDM1131MX4T5G is sourced from the original manufacturer or authorized distributors?
All ESDM1131MX4T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESDM1131MX4T5G meets industry standards.
7.What is the process for return or replacement of ESDM1131MX4T5G?
All ESDM1131MX4T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESDM1131MX4T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESDM1131MX4T5G part is unused and in its original packaging.
Return procedure for ESDM1131MX4T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESDM1131MX4T5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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