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onsemi ESDM3033N2T5G
- Part No.:
- ESDM3033N2T5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
ESDM3033N2T5G.pdf
- Description:
- BIDIRECTIONAL 5V MID-CAP SURGE I
- Quantity:
- Payment:
- Shipping:
Inventory:6,820
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Product details
Overview
ESDM3033N2T5G from onsemi is a bidirectional ESD protection diode designed for low-capacitance, high-speed signal line protection in space-constrained applications. It features a 3.3 V stand-off voltage, 6.0 V clamping voltage at 1 A peak pulse current, 21 pF junction capacitance at 0 V, and IEC 61000-4-2 Level 4 compliance (±30 kV contact/air). It is used to safeguard USB ID lines, SD card interfaces, audio paths, and GPIOs against electrostatic discharge.
For engineers reviewing the ESDM3033N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8.2 V at 8 A, sub-0.37 mm body height, bidirectional operation, 21 pF capacitance at 1 MHz, and X2DFN2 package compatibility with high-density PCB layouts.
Technical Context
The ESDM3033N2T5G implements a silicon avalanche diode structure optimized for fast transient response and low dynamic resistance (0.11 Ω), enabling effective clamping during IEC 61000-4-2 ESD events. Its bidirectional configuration protects both positive and negative transients without polarity dependence.
It operates within a −55 °C to +150 °C junction temperature range and delivers stable performance up to 9.9 A peak pulse current (8/20 µs waveform) while maintaining ≤0.1 µA reverse leakage at 3.3 V. The device's 21 pF capacitance and 0.01 dB insertion loss at 10 MHz support high-fidelity signal integrity in USB and audio applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 3.3 V - Maximum continuous reverse voltage before conduction begins; ensures no interference with 3.3 V logic signaling. |
| Clamping Voltage @ 1 A | 6.0 V - Peak voltage across diode during 1 A ESD pulse; limits stress on protected ICs. |
| Clamping Voltage @ 8 A | 8.2 V - Sustained clamping level under severe 8 A transient; meets IEC 61000-4-2 Level 4 robustness. |
| Junction Capacitance | 21 pF @ 0 V, 1 MHz - Low enough to avoid signal degradation in USB 2.0 and audio band applications. |
| ESD Rating | ±30 kV contact / ±30 kV air per IEC 61000-4-2 Level 4 - Highest system-level ESD immunity class. |
| Leakage Current | 0.1 µA @ 3.3 V - Negligible DC loading on sensitive analog or digital I/O lines. |
| Package | X2DFN2 (Case 714AB) - 1.0 mm × 0.6 mm × 0.37 mm footprint; enables ultra-compact placement near connectors. |
Pinout & Package
ESDM3033N2T5G uses the X2DFN2 surface-mount package (Case 714AB), measuring 1.0 mm × 0.6 mm × 0.37 mm with 0.65 mm pitch and coplanar terminals. It is a 2-terminal bidirectional device with no internal polarity marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Anode/Cathode (bidirectional) | Common connection point for ESD current path; interchangeable with Terminal 2 due to symmetrical structure. |
| Terminal 2 | Anode/Cathode (bidirectional) | Second terminal of the same bidirectional diode junction; forms low-impedance shunt path for ± transients. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD protection | Single-device protection against both positive and negative ESD strikes without external biasing or polarity constraints. |
| Low 21 pF capacitance | Preserves signal rise/fall times and minimizes distortion in high-speed data lines such as USB ID and SD card CMD/DAT. |
| 0.37 mm profile | Enables placement directly adjacent to board-edge connectors and micro-SD slots where vertical clearance is limited. |
| 0.11 Ω dynamic resistance | Ensures rapid voltage clamping and minimal overshoot during sub-nanosecond ESD transients. |
| Pb-free, RoHS-compliant | Meets global environmental regulations and supports lead-free reflow soldering profiles up to 260 °C (10 s). |
Applications
| USB ID Line Protection | SD Card Protection |
|---|---|
Use Scenario: Protecting the USB ID pin in OTG-enabled devices from ESD during cable insertion/removal. IC Role / Device Role: Bidirectional low-capacitance shunt clamp placed between ID pin and ground. Use Value: Prevents latch-up or damage to USB transceiver ICs while adding only 21 pF loading-well below USB 2.0's 15 pF max recommendation. | Use Scenario: Shielding SD card interface pins (CMD, DAT0–DAT3, CLK) from handling ESD in portable media devices. IC Role / Device Role: Per-line ESD suppressor mounted at card slot edge, connected between signal and ground. Use Value: Maintains signal integrity across 25 MHz SD clock with <0.01 dB insertion loss and withstands repeated ±30 kV contact discharges. |
| Audio Line Protection | GPIO Protection |
Use Scenario: Safeguarding stereo headset jack detection and microphone bias lines in smartphones and wearables. IC Role / Device Role: Low-leakage (0.1 µA) bidirectional clamp on analog audio paths. Use Value: Eliminates audible pop/crackle during plug insertion by clamping transients to ≤8.2 V without DC offset or noise injection. | Use Scenario: Hardening general-purpose I/O pins on microcontrollers exposed to user-accessible buttons, LEDs, or sensors. IC Role / Device Role: Standalone ESD guard on each GPIO trace, placed before series resistors or level shifters. Use Value: Provides full IEC Level 4 protection without requiring layout changes or additional components-reducing BOM count and test complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Unidirectional; 5.5 V clamping @ 1 A; 12 pF capacitance; SOT-5X3 package (1.0 × 0.8 mm) | Requires separate anode/cathode routing; lower capacitance but lacks bidirectional symmetry for AC-coupled lines. | Select when lower capacitance is critical and signal polarity is fixed (e.g., power rails or unidirectional buses). |
| SP1001-01UTG | Bidirectional; 3.3 V stand-off; 12 pF capacitance; 0.6 mm × 0.3 mm DFN package | Smaller footprint but rated only to ±15 kV contact (IEC Level 3); lower peak pulse current (6 A). | Choose for ultra-miniature designs where Level 4 ESD is not required and board area is more constrained than robustness. |
Compared with TPD2E001DRYR and SP1001-01UTG, the ESDM3033N2T5G uniquely balances Level 4 ESD immunity, bidirectional operation, and 21 pF capacitance in a 1.0 × 0.6 mm footprint-making it optimal for compact, high-reliability USB and SD interfaces where polarity-agnostic protection is mandatory.
Availability
ESDM3033N2T5G is available at Aetrix Electronics and suitable for USB ID line protection, SD card interface hardening, and audio jack ESD suppression requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for ESDM3033N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ESDM3033N2T5G belongs to onsemi's Micro-Packaged Diodes for ESD Protection product line, engineered specifically for high-density consumer and portable electronics where minimal capacitance, ultra-low profile, and certified IEC Level 4 robustness are essential.
FAQ
What is the maximum operating temperature range for the ESDM3033N2T5G?
The ESDM3033N2T5G has a specified junction and storage temperature range of −55 °C to +150 °C. This wide thermal envelope allows reliable operation in harsh environments such as automotive infotainment modules or industrial handheld scanners. The device maintains its 3.3 V stand-off voltage and ≤8.2 V clamping performance across this full range, as verified in onsemi's characterization testing per the ESDM3033 datasheet Rev. 3.
Does the ESDM3033N2T5G require external biasing to function?
No, the ESDM3033N2T5G does not require external biasing. It is a passive, bidirectional silicon avalanche diode with symmetrical I-V characteristics-meaning it conducts equally for positive and negative transients without polarity-specific connections. This simplifies layout and eliminates risk of incorrect orientation during assembly. The ESDM3033N2T5G functions autonomously whenever voltage across its terminals exceeds the breakdown threshold (~5.1 V).
How does the 21 pF junction capacitance of the ESDM3033N2T5G impact USB 2.0 signal integrity?
The 21 pF junction capacitance of the ESDM3033N2T5G is measured at 0 V and 1 MHz, and remains stable across the USB 2.0 frequency band (up to 480 MHz). While higher than some ultra-low-C alternatives, this value introduces negligible group delay or impedance mismatch when placed at connector edges-verified by onsemi's Figure 6 (capacitance vs. frequency) and Figure 5 (0.01 dB insertion loss at 10 MHz). For most USB ID and VBUS monitoring lines, 21 pF poses no signal integrity risk.
Is the ESDM3033N2T5G compatible with lead-free reflow soldering processes?
Yes, the ESDM3033N2T5G is Pb-free, halogen-free/BFR-free, and RoHS-compliant. Its package supports standard lead-free reflow profiles, including peak temperatures up to 260 °C for 10 seconds, as confirmed in the "Maximum Ratings" table of the official datasheet. The X2DFN2 body exhibits excellent thermal stability during soldering, with no warpage or delamination observed in qualification testing per J-STD-020.
Can the ESDM3033N2T5G be used to protect 5 V logic lines?
No, the ESDM3033N2T5G is not recommended for 5 V logic lines. Its 3.3 V working peak reverse voltage (VRWM) means it begins conducting significantly above ~5.1 V breakdown, risking premature leakage or false triggering on 5 V nominal systems. For 5 V applications, onsemi recommends alternatives like the ESDM3051N2T5G (5.0 V VRWM) or NUP4105MR6T1G. Using ESDM3033N2T5G on 5 V lines may cause excessive standby current or signal distortion.
ESDM3033N2T5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.1V
- Voltage - Clamping (Max) @ Ipp:
- 8.2V
- Current - Peak Pulse (10/1000µs):
- 9.9A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 21pF @ 1MHz (Max)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X2DFN (1x0.6)
ESDM3033N2T5G FAQ
1.How can I place an order for ESDM3033N2T5G through Aetrix?
Please submit a Request for Quotation (RFQ) for ESDM3033N2T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESDM3033N2T5G reliable?
The price and inventory of ESDM3033N2T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESDM3033N2T5G is usually 5 days.
3.What payment methods are accepted for ESDM3033N2T5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESDM3033N2T5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESDM3033N2T5G?
ESDM3033N2T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESDM3033N2T5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESDM3033N2T5G?
For technical support, including ESDM3033N2T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESDM3033N2T5G requirements.
6.How does Aetrix verify that ESDM3033N2T5G is sourced from the original manufacturer or authorized distributors?
All ESDM3033N2T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESDM3033N2T5G meets industry standards.
7.What is the process for return or replacement of ESDM3033N2T5G?
All ESDM3033N2T5G units undergo pre-shipment inspection (PSI). If there is an issue with ESDM3033N2T5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESDM3033N2T5G part is unused and in its original packaging.
Return procedure for ESDM3033N2T5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESDM3033N2T5G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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