onsemi ESDM3051MXT5G

Overview

ESDM3051MXT5G from onsemi is a bidirectional ESD protection diode in X3DFN2 package, designed for low-capacitance (21 pF), low-leakage (<0.1 µA), and fast-response transient suppression on 5 V signal lines such as USB ID, SD card, and audio interfaces.

For engineers reviewing the ESDM3051MXT5G datasheet, pinout, applications, or equivalent options, key selection criteria include IEC 61000−4−2 Level 4 compliance (±30 kV contact/air), clamping voltage ≤8.2 V at 8 A, 5.0 V stand-off voltage, and 0.62 mm × 0.32 mm footprint for space-constrained portable designs.

Technical Context

The ESDM3051MXT5G implements a symmetric bidirectional TVS structure with silicon avalanche junctions optimized for sub-10 ns response to ESD transients. Its low dynamic resistance (0.11 Ω) and tight clamping behavior ensure minimal overvoltage exposure to downstream ICs during ±8 kV IEC 61000−4−2 events.

Designed for signal-line protection, it operates with reverse working voltage of 5.0 V and breakdown voltage ≥5.1 V at 1 mA, enabling compatibility with standard 5 V logic and interface rails without false triggering. Junction capacitance remains stable at 21 pF (0 V, 1 MHz), supporting high-speed data integrity up to 10 MHz with only 0.01 dB insertion loss.

Key Specifications

Pinout & Package

ESDM3051MXT5G uses the X3DFN2 (Case 152AF) surface-mount package: ultra-compact 0.62 mm × 0.32 mm body with 0.24 mm height and 0.35 mm pitch. Two-terminal bidirectional configuration requires no polarity orientation during placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD9X5.0ST5G and CM1213A-03SO, the ESDM3051MXT5G offers the smallest footprint and lowest capacitance among single-line 5 V ESD diodes, making it optimal for ultra-dense portable layouts where each 0.1 mm² matters and signal bandwidth exceeds 5 MHz.

Availability

ESDM3051MXT5G is available at Aetrix Electronics and suitable for USB ID line protection, SD card interface hardening, and audio path ESD shielding requiring stable component supply across consumer electronics, medical wearables, and industrial handheld terminals.

Supply support for ESDM3051MXT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and intelligent edge applications.

The ESDM3051MXT5G belongs to onsemi's Micro-Packaged Diodes for ESD Protection product line, engineered specifically for ultra-compact, high-fidelity signal-line transient suppression in space- and performance-constrained portable electronics.

FAQ

What is the maximum operating temperature range for the ESDM3051MXT5G?

The ESDM3051MXT5G supports a junction and storage temperature range of −55 °C to +150 °C, enabling reliable operation in extended-temperature environments such as automotive infotainment modules and industrial handheld scanners where ambient temperatures exceed 85 °C. This thermal robustness is maintained without derating up to its full 5 V stand-off rating.

Does the ESDM3051MXT5G require external biasing or control signals?

No, the ESDM3051MXT5G is a passive bidirectional TVS diode that operates without any external power, bias, or control circuitry. It functions solely based on voltage threshold behavior - conducting only during overvoltage transients above its breakdown voltage (≥5.1 V). This simplifies integration into existing signal paths without modifying host IC firmware or power domains.

How does the ESDM3051MXT5G compare to polymer-based ESD suppressors?

Unlike polymer-based suppressors, the ESDM3051MXT5G delivers deterministic clamping voltage (≤8.2 V @ 8 A), nanosecond response time, and stable 21 pF capacitance across temperature and lifetime. Polymer devices exhibit higher dynamic resistance and variable clamping, making the ESDM3051MXT5G preferable for precision analog and high-speed digital interfaces where voltage overshoot must be tightly bounded.

Can the ESDM3051MXT5G be used on 3.3 V logic lines?

Yes, the ESDM3051MXT5G is compatible with 3.3 V systems because its 5.0 V stand-off voltage provides sufficient margin above the 3.3 V rail, and its <0.1 µA leakage at 5 V ensures negligible current draw even when biased at 3.3 V. Its 21 pF capacitance also avoids signal degradation on typical 3.3 V GPIO or I²C lines operating below 10 MHz.

Is the ESDM3051MXT5G compliant with lead-free assembly standards?

Yes, the ESDM3051MXT5G is Pb-free, halogen-free/BFR-free, and RoHS-compliant. Its X3DFN2 package is rated for lead-free reflow soldering with a maximum lead temperature of 260 °C for 10 seconds, fully supporting modern IPC-J-STD-020-compliant manufacturing processes without risk of delamination or voiding.