onsemi ESDM3551N2T5G

Overview

ESDM3551N2T5G from onsemi is a bidirectional TVS diode designed for IEC 61000−4−2 Level 4 ESD protection of voltage-sensitive interfaces, featuring 5.5 V stand-off voltage, 21 pF junction capacitance at 0 V, 6.0 V clamping voltage at 1 A, ±30 kV contact/air ESD rating, and X2DFN2 (0402) package. It protects USB ID lines, SD card interfaces, audio paths, and GPIO in space-constrained portable electronics.

For engineers reviewing the ESDM3551N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8.2 V at 8 A, leakage current ≤0.1 µA at 5.5 V, low 21 pF capacitance for high-speed signal integrity, and AEC−Q101 qualification for automotive-grade reliability.

Technical Context

The ESDM3551N2T5G implements a symmetric bidirectional TVS structure with silicon avalanche clamping, enabling equal protection for positive and negative transients. Its low dynamic resistance (0.11 Ω) and fast TLP response ensure sub-100 ns clamping during IEC 61000−4−2 events.

Designed for placement directly at I/O pads, it operates with no bias required and supports transient suppression across 0–5.5 V DC working range. The device meets ISO 10605 (150 pF/2 kΩ, 330 pF/2 kΩ, 330 pF/330 Ω) and delivers 7.5 V clamping at 16 A TLP, correlating to IEC Level 4 (±8 kV contact).

Key Specifications

Pinout & Package

X2DFN2 (0402) surface-mount package: 1.00 mm × 0.60 mm × 0.37 mm body, 0.65 mm pitch, Pb-free, halogen-free, RoHS compliant. Two-terminal monolithic structure with no internal bias or control pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESDM3551N2T5G, ESD9B5.0ST5G trades AEC−Q101 compliance and higher surge robustness for lower capacitance, while SZESDM3551N2T5G provides identical protection with enhanced automotive supply-chain governance-no layout or schematic changes needed between the three.

Availability

ESDM3551N2T5G is available at Aetrix Electronics and suitable for USB ID line protection, SD card interface hardening, and audio path safeguarding requiring stable component supply across high-volume consumer, industrial, and automotive programs.

Supply support for ESDM3551N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The ESDM3551 series belongs to onsemi's Micro-Packaged ESD Protection Diodes product line, engineered specifically for board-level I/O protection in miniaturized, high-speed electronic systems where space, capacitance, and reliability are critical constraints.

FAQ

What is the maximum working voltage supported by the ESDM3551N2T5G?

The ESDM3551N2T5G has a working peak reverse voltage (VRWM) of 5.5 V, meaning it can continuously block up to 5.5 V DC or peak AC voltage without significant leakage. This makes it suitable for protecting 3.3 V and 5 V logic interfaces, including USB, SD card, and GPIO lines, while maintaining <0.1 µA leakage current at rated voltage. Exceeding 5.5 V risks premature conduction and compromised protection margin.

Does the ESDM3551N2T5G require any external bias or control circuitry?

No, the ESDM3551N2T5G is a passive, bidirectional TVS diode requiring no external bias, power, or control signals. It operates solely based on its intrinsic avalanche breakdown characteristics, clamping transients automatically when voltage exceeds ~5.6 V (VBR min). This simplifies layout, reduces BOM count, and eliminates startup or configuration dependencies in the ESDM3551N2T5G implementation.

Is the ESDM3551N2T5G qualified for automotive applications?

The standard ESDM3551N2T5G is not AEC−Q101 qualified; however, its automotive-grade variant SZESDM3551N2T5G carries full AEC−Q101 certification and PPAP capability. Both share identical electrical parameters and X2DFN2 packaging, but only the SZ-prefixed version meets automotive quality system requirements for temperature cycling, humidity resistance, and process traceability in ESDM3551N2T5G-based vehicle designs.

What is the junction capacitance of the ESDM3551N2T5G and why does it matter?

The ESDM3551N2T5G exhibits 21 pF junction capacitance at 0 V and 1 MHz, measured directly across its terminals. This low value minimizes signal distortion on high-speed lines-such as 48 MHz SD card clocks or 480 Mbps USB 2.0 data-by avoiding excessive RC time constants or insertion loss (>0.01 dB at 10 MHz). Maintaining this capacitance ensures timing margins remain intact in ESDM3551N2T5G-protected interfaces.

How does the ESDM3551N2T5G perform under IEC 61000−4−2 Level 4 ESD testing?

The ESDM3551N2T5G is rated for IEC 61000−4−2 Level 4: ±30 kV contact and ±30 kV air discharge. Its 7.5 V clamping voltage at 16 A TLP current directly correlates to ±8 kV contact performance, ensuring downstream ICs see less than 8.2 V during worst-case 8 A surges. This validated clamping behavior enables pass/fail compliance without additional protection stages in ESDM3551N2T5G-deployed systems.