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Vishay General Semiconductor - Diodes Division GMF05C-HS3-GS08
- Part No.:
- GMF05C-HS3-GS08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 6-WFDFN Exposed Pad
- Datasheet:
-
GMF05C-HS3-GS08.pdf
- Description:
- TVS DIODE 5VWM 12.5VC LLP75-6A
- Quantity:
- Payment:
- Shipping:
Inventory:3,542
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Product details
Overview
GMF05C-HS3-GS08 from Vishay Semiconductors is a 5-line bidirectional asymmetrical (BiAs) ESD protection diode array in LLP75-6A package, rated for 5 V reverse working voltage (VRWM), ±30 kV IEC 61000-4-2 ESD immunity, and 12 A peak pulse current per line. It protects high-speed data lines such as USB 2.0, HDMI, and SD card interfaces against electrostatic discharge and surge transients.
For engineers reviewing the GMF05C-HS3-GS08 datasheet, GMF05C-HS3-GS08 pinout, GMF05C-HS3-GS08 application, or GMF05C-HS3-GS08 equivalent, key selection criteria include clamping voltage at 12 A (12.5 V), low leakage (<1 µA), 150 pF capacitance at 0 V, and LLP75-6A footprint compatibility with space-constrained portable electronics designs.
Technical Context
The GMF05C-HS3-GS08 implements BiAs-mode protection: pin 2 serves as common ground, while pins 1 and 3–6 connect to five independent signal lines. Each protection path features asymmetrical clamping-reverse breakdown at 6–8 V and forward clamping at 1.5 V (1 A) / 5.5 V (12 A)-enabling tight suppression of both positive and negative transients near ground potential.
Its electrical behavior is defined by discrete Zener-like junctions per channel, not integrated TVS structures. The device supports parallel connection of channels to scale surge handling (e.g., doubling IPPM to 24 A), though this increases total capacitance and leakage proportionally-critical for high-frequency signal integrity in USB or MIPI applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Protection Lines | 5 independent signal/data lines protected simultaneously |
| VRWM | 5 V - maximum continuous operating voltage before leakage rises above 1 µA |
| VBR (min/typ/max) | 6 / 7 / 8 V - reverse breakdown threshold defining turn-on point for transient shunting |
| VC @ 12 A | 12.5 V - clamping voltage during 8/20 µs surge, limiting downstream IC stress |
| CD @ 0 V / 1 MHz | 126–150 pF - signal-line loading affecting impedance matching and bandwidth in >100 MHz interfaces |
| ESD Rating | ±30 kV contact / ±30 kV air per IEC 61000-4-2 - exceeds Level 4 system-level ESD immunity requirements |
| IPP (per line) | 12 A per line per IEC 61000-4-5 - handles lightning-induced surges in industrial and automotive port interfaces |
Pinout & Package
Package: LLP75-6A - ultra-compact leadless plastic package (1.6 mm × 1.6 mm × 0.55 mm), MSL level 1, RoHS-compliant, UL 94 V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Signal Line 1 (L1) | Protected I/O path; connects to first data line (e.g., USB D+) |
| Pin 2 | Ground (GND) | Common cathode/anode reference for all 5 protection paths; must be low-inductance PCB connection |
| Pin 3 | Signal Line 2 (L2) | Protected I/O path; connects to second data line (e.g., USB D−) |
| Pin 4 | Signal Line 3 (L3) | Protected I/O path; used for auxiliary signals like SD card CMD or HDMI CEC |
| Pin 5 | Signal Line 4 (L4) | Protected I/O path; supports third high-speed interface lane |
| Pin 6 | Signal Line 5 (L5) | Protected I/O path; enables full 5-line coverage for multi-lane buses (e.g., eMMC, MIPI D-PHY) |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional Asymmetrical (BiAs) Clamping | Enables sub-2 V forward clamping and <13 V reverse clamping-preserves signal swing while suppressing transients across full rail range |
| Low Capacitance (150 pF max) | Maintains signal integrity up to ~300 MHz; suitable for USB 2.0 (480 Mbps) and SDIO without degrading eye diagram |
| Ultra-Compact LLP75-6A Footprint | 1.6 mm × 1.6 mm area saves >60% board space vs. SOT-23-6; ideal for smartphones, wearables, and compact IoT modules |
| ±30 kV ESD Immunity | Exceeds IEC 61000-4-2 Level 4-eliminates need for secondary board-level ESD protection in consumer handheld designs |
| Lead-Free & RoHS Compliant | Meets EU Directive 2011/65/EU and WEEE 2002/96/EC; compatible with standard Pb-free reflow profiles (260 °C/10 s) |
Applications
| USB 2.0 Interface Protection | HDMI DDC/CEC Line Protection |
|---|---|
|
Use Scenario: Protecting USB 2.0 D+ and D− lines on host controllers and peripheral devices against user-handling ESD events. IC Role / Device Role / Timing Role: Discrete ESD clamp placed directly at connector, providing low-inductance path to ground before transients reach PHY IC. Use Value: Prevents latch-up or gate oxide damage in USB transceivers by clamping ±30 kV discharges to ≤12.5 V within nanoseconds. |
Use Scenario: Safeguarding HDMI DDC (I²C) and CEC control lines from ESD during cable insertion in TVs, set-top boxes, and AV receivers. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor preserving 100 kHz I²C timing margins while blocking fast transients. Use Value: Maintains reliable hot-plug detection and EDID communication by limiting leakage to <1 µA and capacitance to 150 pF. |
| SD Card Interface Protection | eMMC Signal Line Protection |
|
Use Scenario: Shielding SD card slot data lines (CMD, CLK, DAT0–DAT3) in tablets and digital cameras from finger-contact ESD. IC Role / Device Role / Timing Role: Per-line transient voltage suppressor placed adjacent to SD connector, minimizing trace inductance. Use Value: Ensures robust boot and file transfer by holding clamping voltage below 12.5 V at 12 A surge, preventing controller reset or corruption. |
Use Scenario: Protecting eMMC bus signals (CLK, CMD, DAT0–DAT7) in mobile SoC designs where layout density limits discrete TVS placement. IC Role / Device Role / Timing Role: Integrated 5-line ESD array replacing multiple discrete diodes-reducing BOM count and routing complexity. Use Value: Delivers consistent 5 V VRWM and 150 pF capacitance across all 8 data lanes when used in dual-array configuration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4201MR6T1G | 6-line unidirectional array; 5.5 V VRWM; 12 A IPP; 180 pF capacitance | Requires external bias for bidirectional operation; higher capacitance limits use in >200 MHz interfaces | Preferred for cost-sensitive industrial controls where USB speed is not required |
| Infineon ESD204-B1-W02 | 4-line bidirectional array; 5.5 V VRWM; 8 A IPP; 120 pF capacitance; WLCSP-10 package | Smaller 1.0 mm × 1.5 mm footprint but fewer lines; lower surge rating reduces margin in harsh environments | Selected for ultra-dense wearable designs needing minimal area and moderate ESD robustness |
Compared with NUP4201MR6T1G and ESD204-B1-W02, the GMF05C-HS3-GS08 uniquely delivers true 5-line BiAs clamping in a 1.6 mm × 1.6 mm footprint with verified 12 A surge capability-making it optimal for compact, high-reliability USB and SD interfaces requiring balanced positive/negative transient suppression.
Availability
GMF05C-HS3-GS08 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI control line safeguarding, and SD/eMMC bus shielding requiring stable component supply across consumer electronics, industrial HMI, and medical handheld device production.
Supply support for GMF05C-HS3-GS08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in power management, sensing, and circuit protection components with emphasis on reliability and precision.
The GMF05C-HS3-GS08 belongs to Vishay's ESD-Protection Diode Array product line, engineered specifically for high-density, high-speed data interface protection in portable and battery-powered electronics.
FAQ
What is the maximum continuous operating voltage for GMF05C-HS3-GS08?
The GMF05C-HS3-GS08 has a maximum reverse working voltage (VRWM) of 5 V, meaning it can safely block up to 5 V DC or steady-state AC signals without significant leakage current. This rating ensures compatibility with standard 3.3 V and 5 V logic interfaces while maintaining <1 µA reverse leakage at rated voltage-critical for low-power sensor and microcontroller I/O protection.
How does GMF05C-HS3-GS08 achieve bidirectional asymmetrical (BiAs) clamping?
The GMF05C-HS3-GS08 achieves BiAs clamping through internal Zener-diode-based structures per channel that conduct differently in forward versus reverse bias. In reverse, clamping begins at ~6–8 V breakdown; in forward, conduction starts near 1.5 V, enabling tighter suppression of negative transients close to ground. This asymmetry allows precise voltage window control without external biasing components.
Can GMF05C-HS3-GS08 be used for HDMI TMDS lines?
No, GMF05C-HS3-GS08 is not recommended for HDMI TMDS differential pairs due to its 150 pF capacitance, which would degrade signal integrity above ~100 MHz. It is validated for HDMI DDC (I²C) and CEC control lines only. For TMDS protection, lower-capacitance arrays such as Vishay's VC060305X500DP or dedicated high-speed ESD solutions are required.
What is the thermal limit for GMF05C-HS3-GS08 during reflow soldering?
The GMF05C-HS3-GS08 is qualified for lead-free reflow with a peak temperature of 260 °C for 10 seconds at the terminals, per J-STD-020 MSL level 1. Its LLP75-6A package uses UL 94 V-0 flame-retardant molding compound and requires no pre-baking prior to assembly-simplifying manufacturing for high-volume portable electronics production.
Does GMF05C-HS3-GS08 support parallel connection of channels to increase surge rating?
Yes, GMF05C-HS3-GS08 channels can be paralleled to increase peak pulse current handling-for example, using two devices yields 24 A total IPPM and doubles capacitance to 300 pF. However, this configuration requires matched PCB layout symmetry and increases total leakage current proportionally, so system-level validation of signal integrity and thermal rise is essential.
GMF05C-HS3-GS08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 6-WFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Min)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- 12.5V
- Current - Peak Pulse (10/1000µs):
- 12A (8/20µs)
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 126pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LLP75-6A
GMF05C-HS3-GS08 FAQ
1.How can I place an order for GMF05C-HS3-GS08 through Aetrix?
Please submit a Request for Quotation (RFQ) for GMF05C-HS3-GS08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GMF05C-HS3-GS08 reliable?
The price and inventory of GMF05C-HS3-GS08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GMF05C-HS3-GS08 is usually 5 days.
3.What payment methods are accepted for GMF05C-HS3-GS08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GMF05C-HS3-GS08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GMF05C-HS3-GS08?
GMF05C-HS3-GS08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GMF05C-HS3-GS08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GMF05C-HS3-GS08?
For technical support, including GMF05C-HS3-GS08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GMF05C-HS3-GS08 requirements.
6.How does Aetrix verify that GMF05C-HS3-GS08 is sourced from the original manufacturer or authorized distributors?
All GMF05C-HS3-GS08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GMF05C-HS3-GS08 meets industry standards.
7.What is the process for return or replacement of GMF05C-HS3-GS08?
All GMF05C-HS3-GS08 units undergo pre-shipment inspection (PSI). If there is an issue with GMF05C-HS3-GS08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GMF05C-HS3-GS08 part is unused and in its original packaging.
Return procedure for GMF05C-HS3-GS08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
GMF05C-HS3-GS08 Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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