Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division GSOT05-HT3-GS08

Part No.:
GSOT05-HT3-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
3-WDFN
Datasheet:
AetrixGSOT05-HT3-GS08.pdf
Description:
TVS DIODE 5VWM 16VC LLP75-3B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,900

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

GSOT05-HT3-GS08 from Vishay Semiconductors is a single-line bidirectional asymmetrical (BiAs) ESD protection diode in LLP75-3B package, rated for 5 V reverse standoff voltage (VRWM), ±30 kV IEC 61000-4-2 ESD immunity, and 30 A peak pulse current (IPPM), deployed to safeguard high-speed USB 2.0 data lines against transient overvoltage events.

For engineers reviewing the GSOT05-HT3-GS08 datasheet, GSOT05-HT3-GS08 pinout, GSOT05-HT3-GS08 application, or GSOT05-HT3-GS08 equivalent, key selection criteria include its 260–350 pF capacitance at 0 V bias, 12 V max clamping voltage at 30 A, 5 V working voltage compatibility with 3.3 V/5 V logic interfaces, and LLP75-3B footprint suitability for space-constrained PCB layouts.

Technical Context

The GSOT05-HT3-GS08 operates in BiAs-mode: pin 1 is grounded, pin 3 connects to the protected signal line, and pin 2 serves as internal connection point enabling asymmetrical clamping-forward conduction clamps negative transients near 0 V (VF ≤ 4.5 V at 30 A), while reverse breakdown (VBR = 6–6.8 V) handles positive surges with VC ≤ 16 V at full IPPM.

This device implements a monolithic silicon avalanche structure optimized for low-leakage (IR = 10 µA at VR = 5 V) and stable clamping across -40 °C to +125 °C junction temperature, with MSL Level 1 moisture sensitivity and lead-free matte tin (e3) termination compatible with standard reflow profiles up to 260 °C/10 s.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Standoff Voltage (VRWM) 5 V - Maximum continuous DC or RMS signal voltage the device blocks without clamping; matches 5 V logic and USB 2.0 VBUS-tolerant I/O rails.
ESD Immunity ±30 kV contact / ±30 kV air per IEC 61000-4-2 - Ensures robust system-level ESD survivability without external shielding or layout reinforcement.
Peak Pulse Current (IPPM) 30 A (8/20 µs waveform) - Sustains high-energy surges from lightning-induced or cable-discharge events on exposed ports.
Clamping Voltage (VC) ≤16 V at 30 A - Limits transient voltage seen by downstream ICs (e.g., USB transceivers) below absolute maximum ratings.
Capacitance (CD) 260–350 pF at 0 V / 150 pF at 2.5 V, 1 MHz - Balances ESD robustness with signal integrity for <480 Mbps USB 2.0 data rates.
Package LLP75-3B (3-pin, 1.2 × 0.8 × 0.5 mm) - Enables ultra-compact placement adjacent to connectors or IC pads with minimal trace inductance.

Pinout & Package

GSOT05-HT3-GS08 uses the LLP75-3B surface-mount package: 3-terminal, lead-free matte tin (e3) finish, UL 94 V-0 molding compound, MSL Level 1, and 5.1 mg unit weight.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Ground reference Connected directly to system ground plane; establishes return path for clamped transient current.
Pin 2 Internal node (anode/cathode junction) Not externally accessible; electrically ties protection elements between pins 1 and 3 in BiAs configuration.
Pin 3 Signal line input Connects to protected data line (e.g., USB D+ or D−); experiences clamped voltage during ESD events.

Key Features

Feature Design Value
Bidirectional Asymmetrical (BiAs) clamping Clamps negative transients near 0 V (VF ≤ 4.5 V) and positive transients at controlled VC ≤ 16 V - preserves signal symmetry while minimizing forward-voltage overshoot.
Low leakage current IR = 10 µA at VR = 5 V - prevents DC loading of sensitive analog or high-impedance signal paths during normal operation.
High ESD immunity ±30 kV contact/air per IEC 61000-4-2 - exceeds industrial and consumer immunity requirements without additional board-level protection.
Space-efficient LLP75-3B package 1.2 × 0.8 mm footprint - fits within tight spacing constraints next to USB micro-B connectors or high-density BGA ICs.
RoHS-compliant & green compound Lead-free (e3), halogen-free molding compound, UL 94 V-0 rated - meets global environmental compliance mandates without performance trade-offs.

Applications

USB 2.0 Interface Protection Industrial Serial Port ESD Guard

Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against connector hot-plug ESD and cable discharge events.

IC Role / Device Role / Timing Role: Single-line ESD suppressor placed immediately at USB connector, shunting transients before they reach the USB transceiver IC.

Use Value: Maintains signal integrity with 260–350 pF capacitance while clamping surges to ≤16 V - prevents latch-up or damage to 3.3 V tolerant PHY layers.

Use Scenario: Safeguarding RS-232/RS-485 transceiver I/O pins in factory automation controllers exposed to maintenance personnel ESD.

IC Role / Device Role / Timing Role: Point-of-entry transient suppressor on differential bus lines, grounded at chassis via short low-inductance path.

Use Value: Delivers ±30 kV ESD immunity without degrading slew rate or adding jitter - ensures reliable communication under harsh electrostatic environments.

Consumer Audio Data Lines Automotive Infotainment USB Ports

Use Scenario: Shielding I²S or SPDIF digital audio signal traces between codec and processor in portable speakers or soundbars.

IC Role / Device Role / Timing Role: Localized ESD clamp on high-frequency digital audio pairs, minimizing parasitic capacitance impact on edge fidelity.

Use Value: 150 pF capacitance at 2.5 V bias reduces signal rise-time degradation - preserves audio bit accuracy and jitter performance.

Use Scenario: Hardening USB Type-A ports in automotive head units against ESD from passenger interaction in dry cabin conditions.

IC Role / Device Role / Timing Role: AEC-Q200 stress-tested ESD protector mounted at connector interface, operating across -40 °C to +125 °C.

Use Value: Stable 5 V VRWM and MSL Level 1 packaging ensure long-term reliability in thermally cycling vehicle environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar single-line ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ5.0A Unidirectional, DO-214AC package (4.3 × 2.6 mm), higher 600 W peak power, 100 pF typical capacitance Requires external series resistor for bidirectional behavior; unsuitable for high-speed data lines due to larger footprint and layout inductance Prefer GSOT05-HT3-GS08 for USB/data applications; SMAJ5.0A better suited for power rail or low-speed analog protection.
TPD2E001DRYR Two-channel, 0.65 mm pitch X2SON package, 12 pF @ 0 V, 5.5 V VRWM, ±8 kV IEC 61000-4-2 Lower capacitance enables USB 3.0 support but reduced ESD rating limits use to less aggressive ESD environments Choose GSOT05-HT3-GS08 where ±30 kV system-level ESD is mandated; TPD2E001DRYR fits tighter capacitance budgets at lower immunity tiers.

Compared with SMAJ5.0A and TPD2E001DRYR, GSOT05-HT3-GS08 uniquely balances ±30 kV immunity, 5 V VRWM, and sub-350 pF capacitance in a 1.2 mm footprint-making it optimal for cost-sensitive, space-constrained USB 2.0 designs requiring certified industrial-grade ESD resilience.

Availability

GSOT05-HT3-GS08 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial serial port hardening, and automotive infotainment port safeguarding requiring stable component supply and long-lifecycle support.

Supply support for GSOT05-HT3-GS08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for industrial, automotive, and computing markets.

The GSOT-HT3 family was engineered specifically for high-density, high-immunity ESD protection of high-speed data lines-prioritizing low capacitance, precise VRWM matching, and compact LLP packaging for modern portable and embedded systems.

FAQ

What is the primary circuit function of the GSOT05-HT3-GS08?

The GSOT05-HT3-GS08 functions as a single-line bidirectional asymmetrical (BiAs) ESD protection diode. It safeguards signal lines-such as USB 2.0 D+ and D−-by clamping transient voltages to safe levels. Its design routes surge currents from pin 3 to pin 1 (ground) while maintaining high impedance during normal operation, ensuring minimal interference with signal integrity. The GSOT05-HT3-GS08 achieves this using an integrated silicon avalanche structure optimized for fast response and repeatable clamping performance.

Does the GSOT05-HT3-GS08 support IEC 61000-4-2 Level 4 ESD testing?

Yes, the GSOT05-HT3-GS08 is rated for ±30 kV contact discharge and ±30 kV air discharge per IEC 61000-4-2, exceeding Level 4 (±8 kV contact / ±15 kV air). This rating is verified per the Vishay datasheet (Document Number 85822, Rev. 1.8) and applies to the GSOT05-HT3-GS08 in its standard LLP75-3B package with proper PCB grounding. The device maintains functionality after 10 pulses at these levels, making it suitable for industrial and consumer equipment requiring robust system-level ESD resilience.

What is the maximum clamping voltage of the GSOT05-HT3-GS08 under full-rated surge current?

The GSOT05-HT3-GS08 exhibits a maximum reverse clamping voltage (VC) of 16 V when subjected to its full-rated 30 A peak pulse current (8/20 µs waveform), as specified in the Absolute Maximum Ratings table. This value ensures downstream ICs-such as USB transceivers with 5.5 V absolute maximum ratings-are protected from destructive overvoltage. The GSOT05-HT3-GS08 achieves this clamping performance while maintaining low forward clamping (≤4.5 V at 30 A) for negative transients, preserving signal reference integrity.

Can the GSOT05-HT3-GS08 be used on 3.3 V logic lines?

Yes, the GSOT05-HT3-GS08 is compatible with 3.3 V logic systems. Its 5 V reverse standoff voltage (VRWM) provides sufficient margin above 3.3 V nominal rails, and its low leakage current (IR = 10 µA at 5 V) avoids loading sensitive inputs. The device's BiAs architecture ensures symmetrical protection behavior-clamping both positive and negative excursions-without requiring external biasing. Engineers routinely deploy the GSOT05-HT3-GS08 on 3.3 V USB, UART, and I²C lines where ±30 kV ESD immunity is required.

What is the thermal operating range of the GSOT05-HT3-GS08?

The GSOT05-HT3-GS08 supports a junction temperature range of -40 °C to +125 °C, validated per Vishay's datasheet (Document Number 85822). This range covers extended industrial and automotive under-hood environments. The device's LLP75-3B package features MSL Level 1 moisture sensitivity and is qualified for standard lead-free reflow (260 °C/10 s), enabling reliable assembly into high-reliability products. Thermal performance remains stable across this range, with no derating required for VRWM or clamping parameters.

GSOT05-HT3-GS08 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
3-WDFN
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
5V (Min)
Voltage - Breakdown (Min):
6V
Voltage - Clamping (Max) @ Ipp:
16V
Current - Peak Pulse (10/1000µs):
30A (8/20µs)
Power - Peak Pulse:
480W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
260pF @ 1MHz
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LLP75-3B

GSOT05-HT3-GS08 FAQ

1.How can I place an order for GSOT05-HT3-GS08 through Aetrix?

Please submit a Request for Quotation (RFQ) for GSOT05-HT3-GS08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for GSOT05-HT3-GS08 reliable?

The price and inventory of GSOT05-HT3-GS08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GSOT05-HT3-GS08 is usually 5 days.

3.What payment methods are accepted for GSOT05-HT3-GS08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GSOT05-HT3-GS08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for GSOT05-HT3-GS08?

GSOT05-HT3-GS08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your GSOT05-HT3-GS08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for GSOT05-HT3-GS08?

For technical support, including GSOT05-HT3-GS08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GSOT05-HT3-GS08 requirements.

6.How does Aetrix verify that GSOT05-HT3-GS08 is sourced from the original manufacturer or authorized distributors?

All GSOT05-HT3-GS08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GSOT05-HT3-GS08 meets industry standards.

7.What is the process for return or replacement of GSOT05-HT3-GS08?

All GSOT05-HT3-GS08 units undergo pre-shipment inspection (PSI). If there is an issue with GSOT05-HT3-GS08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The GSOT05-HT3-GS08 part is unused and in its original packaging.

Return procedure for GSOT05-HT3-GS08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

GSOT05-HT3-GS08 Tags

  • GSOT05-HT3-GS08
  • GSOT05-HT3-GS08 PDF
  • GSOT05-HT3-GS08 Datasheet
  • GSOT05-HT3-GS08 Specifications
  • GSOT05-HT3-GS08 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division GSOT05-HT3-GS08
  • Buy GSOT05-HT3-GS08
  • GSOT05-HT3-GS08 Price
  • GSOT05-HT3-GS08 Distributor
  • GSOT05-HT3-GS08 Supplier
  • GSOT05-HT3-GS08 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER