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Renesas HZB6.8MWATL-E
- Part No.:
- HZB6.8MWATL-E
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
HZB6.8MWATL-E.pdf
- Description:
- TVS DIODE 3.5VWM 3CMPAK
- Quantity:
- Payment:
- Shipping:
Inventory:42,000
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Product details
Overview
HZB6.8MWATL-E from Renesas Electronics is a dual-element silicon planar Zener diode in CMPAK package, designed for bidirectional surge absorption with 6.8 V nominal Zener voltage, 200 mW total power dissipation, and 30 kV ESD capability (IEC 61000-4-2 level). It serves as a low-capacitance (130 pF), fast-response transient voltage suppressor in signal-line protection circuits.
For engineers reviewing the HZB6.8MWATL-E datasheet, HZB6.8MWATL-E pinout, HZB6.8MWATL-E application, or HZB6.8MWATL-E equivalent, key selection criteria include its dual-cathode/anode configuration, 6.47–7.0 V Zener tolerance at 5 mA, sub-30 Ω dynamic resistance, and suitability for high-density SMT layouts requiring robust ESD immunity without adding discrete TVS arrays.
Technical Context
The HZB6.8MWATL-E integrates two identical Zener elements monolithically in a single CMPAK package, enabling symmetrical clamping in both forward and reverse directions. Its design supports pulse-based surge suppression per IEC 61000-4-2 with failure criterion defined as IR > 2 µA at VR = 3.5 V.
Electrical behavior is characterized at Ta = 25°C with 40 ms Zener current pulses; thermal derating follows Fig.2, limiting usable power to ~100 mW at 75°C ambient. The device operates within −55°C to +150°C storage range and 150°C maximum junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.47–7.0 V at IZ = 5 mA; ensures precise clamping threshold for 5 V logic and USB signal lines. |
| Total Power Dissipation (Pd) | 200 mW (two devices); supports sustained low-energy transients without thermal runaway. |
| ESD Capability | 30 kV per IEC 61000-4-2 (C = 150 pF, R = 330 Ω); eliminates need for external ESD diodes on sensitive interfaces. |
| Capacitance (C) | 130 pF at VR = 0 V, f = 1 MHz; preserves signal integrity on high-speed data lines up to ~10 Mbps. |
| Dynamic Resistance (rd) | ≤30 Ω at IZ = 5 mA; enables sharp voltage regulation during fast-rising transients. |
| Reverse Current (IR) | ≤2 µA at VR = 3.5 V; guarantees minimal leakage in standby mode for battery-powered systems. |
Pinout & Package
CMPAK (PTSP0003ZB-A) is a 3-terminal surface-mount package measuring 2.0 × 1.25 × 0.9 mm (max), optimized for automated placement and high PCB density. Its compact footprint and low mass (0.006 g) support reflow-compatible assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Device A) | First Zener element cathode; connects to protected line for unidirectional clamping path. |
| 2 | Cathode (Device B) | Second Zener element cathode; enables dual-cathode configuration for bidirectional protection topology. |
| 3 | Anode (Common) | Shared anode node; ties both Zener elements to reference ground or bias rail for symmetrical clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-monolithic Zener structure | Enables matched electrical characteristics between two elements for balanced bidirectional clamping performance. |
| CMPAK surface-mount package | Reduces board space by >40% vs. SO-8 or SOT-23-6 alternatives while maintaining thermal reliability. |
| 130 pF capacitance at 0 V | Minimizes signal distortion on USB 2.0, I²C, and UART lines without requiring series impedance tuning. |
| 30 kV contact ESD rating | Meets Level 4 IEC 61000-4-2 without external shielding or layout guard rings. |
Applications
| USB 2.0 Data Line Protection | I²C Bus Interface Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of embedded USB peripherals from ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point. Use Value: 130 pF capacitance avoids signal rise-time degradation; 6.8 V clamping prevents damage to 3.3 V PHY transceivers. | Use Scenario: Safeguarding SDA/SCL lines in industrial sensor nodes exposed to cable discharge events. IC Role / Device Role / Timing Role: Low-leakage shunt protector tied between bus and ground with common-anode configuration. Use Value: ≤2 µA IR at 3.5 V ensures no measurable pull-down on 10 kΩ pull-up resistors; dual-element symmetry maintains bus DC balance. |
| RS-232 Transceiver ESD Clamp | Automotive Body Control Module Inputs |
Use Scenario: Clamping TX/RX pins of ±12 V RS-232 transceivers against human-body-model discharges. IC Role / Device Role / Timing Role: Secondary-level surge absorber positioned after primary LC filtering stage. Use Value: 30 kV ESD rating exceeds IEC 61000-4-2 requirement; 200 mW Pd handles repetitive 40 ms surges without degradation. | Use Scenario: Protecting 5 V microcontroller GPIOs connected to door switch or seat position sensors. IC Role / Device Role / Timing Role: Input-stage Zener clamp referenced to chassis ground in 12 V automotive subsystems. Use Value: −55°C to +150°C operating range matches under-hood thermal requirements; monolithic dual structure eliminates matching drift over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener-based surge absorption applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSZ6.8M3T5G | Single-element SOD-523 package; 6.46–7.14 V VZ range; 100 mW Pd; 120 pF C. | Lacks dual-device architecture; requires two units for bidirectional protection. | Prefer when board area allows discrete placement and cost sensitivity outweighs assembly efficiency. |
| TPD2E001DRYR | Two-channel ESD array in SOT-553; 0.75 pF per channel; 12 kV HBM; no Zener regulation. | Ultra-low capacitance but no DC clamping function; relies on system-level voltage limits. | Select only when protecting high-speed analog or RF lines where <1 pF is mandatory and Zener action is unnecessary. |
Compared with NSZ6.8M3T5G and TPD2E001DRYR, the HZB6.8MWATL-E uniquely delivers integrated dual-Zener clamping in one CMPAK footprint, combining 6.8 V precision regulation, 30 kV ESD immunity, and 130 pF signal loading-enabling simplified layout and guaranteed bidirectional protection without component count increase.
Availability
HZB6.8MWATL-E is available at Aetrix Electronics and suitable for USB interface protection, I²C bus safeguarding, and RS-232 transceiver ESD mitigation requiring stable component supply across automotive, industrial, and consumer electronics programs.
Supply support for HZB6.8MWATL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and mixed-signal solutions for automotive, industrial, and IoT applications.
The HZB6.8MWATL-E belongs to Renesas' legacy Zener surge absorber family, engineered specifically for high-reliability, low-footprint transient suppression in space-constrained digital interfaces.
FAQ
What is the Zener voltage tolerance of HZB6.8MWATL-E at 5 mA test current?
The HZB6.8MWATL-E has a specified Zener voltage range of 6.47 V to 7.0 V at IZ = 5 mA and 40 ms pulse conditions. This 7.7% tolerance ensures reliable clamping for 5 V and 3.3 V logic domains while accommodating process variation across manufacturing lots. The value is measured per individual device within the dual-element structure, and both elements exhibit matched characteristics due to monolithic integration.
Does HZB6.8MWATL-E support bidirectional ESD protection out of the box?
Yes, the HZB6.8MWATL-E provides inherent bidirectional protection via its dual-cathode/common-anode pinout (Pins 1 & 2 = cathodes, Pin 3 = shared anode). When installed with Pin 3 grounded, it clamps positive transients to ground through one Zener and negative transients to ground through the other-no external components or polarity reversal needed. This configuration meets IEC 61000-4-2 requirements in both forward and reverse directions.
What is the maximum ambient temperature at which HZB6.8MWATL-E can safely dissipate its full 200 mW rating?
The HZB6.8MWATL-E achieves its full 200 mW total power dissipation rating only at Ta = 25°C. As shown in Fig.2 of the datasheet, thermal derating begins linearly above 25°C, reducing usable power to approximately 100 mW at 75°C ambient. At 100°C ambient, dissipation drops to ~50 mW. Designers must apply this curve when sizing PCB copper area or selecting adjacent heat-generating components.
Can HZB6.8MWATL-E replace discrete 6.8 V Zener diodes in existing designs?
Yes, the HZB6.8MWATL-E can replace two discrete 6.8 V Zeners in bidirectional protection schemes, provided the PCB layout accommodates the 3-pin CMPAK footprint and the common-anode connection aligns with system grounding strategy. Its matched dual-element structure eliminates inter-device parameter variation seen in discrete pairs, improving consistency in clamping symmetry and temperature drift-critical for high-volume manufacturing.
Is HZB6.8MWATL-E compliant with RoHS and lead-free reflow standards?
Yes, HZB6.8MWATL-E is RoHS-compliant and qualified for lead-free reflow soldering per J-STD-020. The CMPAK package uses matte tin plating and meets JEDEC MSL Level 1 requirements. Renesas confirms compliance with EU Directive 2011/65/EU and subsequent amendments, and the device carries the "RoHS" marking on its laser code (68M) per standard traceability practice.
HZB6.8MWATL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- SC-70, SOT-323
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V
- Voltage - Breakdown (Min):
- 6.47V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 130pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-CMPAK
HZB6.8MWATL-E FAQ
1.How can I place an order for HZB6.8MWATL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZB6.8MWATL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZB6.8MWATL-E reliable?
The price and inventory of HZB6.8MWATL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZB6.8MWATL-E is usually 5 days.
3.What payment methods are accepted for HZB6.8MWATL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZB6.8MWATL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZB6.8MWATL-E?
HZB6.8MWATL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZB6.8MWATL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZB6.8MWATL-E?
For technical support, including HZB6.8MWATL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZB6.8MWATL-E requirements.
6.How does Aetrix verify that HZB6.8MWATL-E is sourced from the original manufacturer or authorized distributors?
All HZB6.8MWATL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZB6.8MWATL-E meets industry standards.
7.What is the process for return or replacement of HZB6.8MWATL-E?
All HZB6.8MWATL-E units undergo pre-shipment inspection (PSI). If there is an issue with HZB6.8MWATL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZB6.8MWATL-E part is unused and in its original packaging.
Return procedure for HZB6.8MWATL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZB6.8MWATL-E Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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