Renesas HZD6.2Z4KRF-E

Overview

HZD6.2Z4KRF-E from Renesas Electronics is a silicon planar Zener diode optimized for ESD and transient surge protection on low-capacitance signal lines, with a nominal Zener voltage of 6.2 V (5.9–6.5 V at 5 mA), maximum capacitance of 4.0 pF, dynamic resistance ≤60 Ω, and ESD capability of ±8 kV per IEC 61000-4-2 (150 pF/330 Ω). It is used in high-speed data interface protection such as USB 2.0, HDMI, and LVDS.

For engineers reviewing the HZD6.2Z4KRF-E datasheet, HZD6.2Z4KRF-E pinout, HZD6.2Z4KRF-E application, or HZD6.2Z4KRF-E equivalent, key selection criteria include low-junction-capacitance ESD clamping performance, SFP package compatibility with fine-pitch PCB layouts, thermal derating behavior up to 150°C junction temperature, and compliance with non-repetitive surge power limits per Fig.3.

Technical Context

This Zener diode operates in reverse-bias breakdown mode to clamp transient overvoltages before they damage downstream ICs. Its low 4.0 pF capacitance ensures minimal signal integrity impact on high-frequency lines, while its 60 Ω dynamic resistance enables fast response and stable clamping voltage under ESD pulse conditions.

The device is rated for 150 mW steady-state power dissipation at 25°C ambient, with linear derating above 25°C (see Fig.2), and supports non-repetitive surge reverse power up to 100 W for 10 µs pulses (Fig.3). It is tested per IEC 61000-4-2 with 10 pulses in both forward and reverse directions, using a 150 pF/330 Ω network.

Key Specifications

Pinout & Package

Package: Super Small Flat Package (SFP), surface-mount, 2-pin, polyimide board mountable (dimensions: 1.4 × 1.0 × 0.3 mm, mass = 0.0010 g).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener-based ESD protection applications.

Compared with HZD6.2Z4KRF-E, NSZ6.2A2T5G offers higher power handling but trades off 25% more capacitance and different mechanical form factor, while CMZ5919B provides higher surge energy tolerance but fails to meet high-speed signal line requirements due to excessive capacitance and through-hole mounting.

Availability

HZD6.2Z4KRF-E is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI signal line clamping, and industrial sensor interface protection requiring stable component supply and consistent ESD performance across production batches.

Supply support for HZD6.2Z4KRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

HZD6.2Z4KRF-E belongs to Renesas' legacy Zener diode portfolio designed specifically for low-capacitance, surface-mount ESD protection in high-speed digital interfaces - emphasizing reliability, small footprint, and repeatable clamping behavior.

FAQ

What is the Zener voltage tolerance of HZD6.2Z4KRF-E?

The HZD6.2Z4KRF-E has a Zener voltage range of 5.9 V to 6.5 V when tested at I_Z = 5 mA and T_a = 25°C. This ±0.3 V tolerance ensures reliable clamping alignment with 5 V and 6 V logic rails. The specification is verified per the official Renesas datasheet Rev.2.00 and applies to every unit shipped. HZD6.2Z4KRF-E maintains this voltage window across its qualified operating temperature range.

Does HZD6.2Z4KRF-E support bidirectional ESD protection?

Yes, HZD6.2Z4KRF-E is rated for ±8 kV contact discharge in both forward and reverse directions per IEC 61000-4-2, with failure defined as IR > 3 µA at VR = 5.5 V. Its symmetric Zener structure enables effective clamping regardless of transient polarity. This makes HZD6.2Z4KRF-E suitable for protecting AC-coupled or differential signal lines without additional external components.

What is the maximum allowable ambient temperature for continuous operation of HZD6.2Z4KRF-E?

HZD6.2Z4KRF-E is rated for continuous operation up to +150°C junction temperature. Using the derating curve in Fig.2 of the datasheet, the maximum ambient temperature depends on PCB thermal design: on a standard polyimide board (20 mm × 15 mm × 0.8 mm), full 150 mW dissipation is allowed only up to ~50°C ambient. Above that, power must be linearly reduced. HZD6.2Z4KRF-E remains functional up to T_stg = +150°C even when unpowered.

Can HZD6.2Z4KRF-E be used in place of a TVS diode for USB 2.0 protection?

HZD6.2Z4KRF-E is functionally appropriate for USB 2.0 data line protection due to its 4.0 pF capacitance and ±8 kV ESD rating, matching typical USB 2.0 ESD requirements. Unlike general-purpose TVS diodes, it uses Zener breakdown for precise low-voltage clamping. However, its 150 mW steady-state limit means it is intended for transient suppression only - not for sustained overvoltage. HZD6.2Z4KRF-E should not replace a high-power TVS in power-rail applications.

Is the SFP package of HZD6.2Z4KRF-E compatible with reflow soldering?

Yes, the SFP package of HZD6.2Z4KRF-E is qualified for standard Pb-free reflow profiles (J-STD-020), but Renesas explicitly advises against hand-soldering with a soldering iron due to mechanical stress risk on the ultra-thin package. Reflow is recommended, with peak temperature ≤260°C and time above liquidus ≤60 seconds. The 0.3 mm profile and 0.0010 g mass make HZD6.2Z4KRF-E sensitive to thermal shock - proper oven profiling is essential for yield.