Renesas HZM3.3WA-JTR-E

Overview

HZM3.3WA-JTR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 3.3 V (min 3.25 V, max 3.50 V at I_Z = 5 mA), with dynamic resistance of 130 Ω, reverse current ≤20 µA at V_R = 1.0 V, and power dissipation up to 200 mW in the MPAK (SC-59A) package - commonly used in voltage regulation for sensor signal conditioning and microcontroller reset circuitry.

For engineers reviewing the HZM3.3WA-JTR-E datasheet, HZM3.3WA-JTR-E pinout, HZM3.3WA-JTR-E application, or HZM3.3WA-JTR-E equivalent, key selection criteria include its tight zener voltage tolerance (±3.0% typical), low temperature coefficient (~+0.02 mV/°C near 3.3 V), surface-mount MPAK footprint compatibility, and suitability for space-constrained industrial and consumer-grade voltage reference designs.

Technical Context

The HZM3.3WA-JTR-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds V_Z. Its epitaxial planar construction ensures consistent breakdown characteristics and low noise performance critical for precision references.

It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, with absolute maximum power dissipation of 200 mW at T_a = 25°C - derating linearly above 25°C per Fig. 3 in the datasheet. The device exhibits a positive temperature coefficient near 3.3 V, enabling predictable drift compensation in multi-diode reference networks.

Key Specifications

Pinout & Package

Package: MPAK (SC-59A), 3-pin surface-mount plastic package per JEITA code PLSP0003ZC-A; dimensions: D = 2.7–3.1 mm, E = 1.35–1.65 mm, L = 0.65 mm, mass = 0.011 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with HZM3.3WA-JTR-E, BZX84-C3V3 offers greater power handling in a widely adopted SOT-23 package but lacks the MPAK's ultra-compact size; MMSZ4685 provides superior surge capability in SOD-123 but requires PCB layout revision and has different thermal resistance - making HZM3.3WA-JTR-E optimal for space-constrained, low-power precision references.

Availability

HZM3.3WA-JTR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reset circuits, portable audio bias networks, and IoT node voltage monitoring requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for HZM3.3WA-JTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog mixed-signal devices, and power management ICs for industrial, automotive, and consumer markets.

HZM3.3WA-JTR-E belongs to the HZM-N Series of silicon epitaxial planar Zener diodes, engineered specifically for high-stability voltage reference and shunt regulation in space-constrained, low-power electronic systems.

FAQ

What is the exact zener voltage range for HZM3.3WA-JTR-E at 5 mA test current?

The HZM3.3WA-JTR-E has a guaranteed zener voltage range of 3.25 V to 3.50 V when tested at I_Z = 5 mA and T_a = 25°C, per the "HZM3.3N" row in the Electrical Characteristics table on page 2 of R07DS0358EJ0600 Rev.6.00. This ±3.0% tolerance reflects the B2 grade specification for the HZM-N Series, and applies directly to the HZM3.3WA-JTR-E ordering variant.

Does HZM3.3WA-JTR-E have a pin 1 connection, and what is its function?

No - pin 1 of the HZM3.3WA-JTR-E is designated NC (No Connect) and is internally unconnected. As shown in the Pin Arrangement diagram on page 1 of the datasheet, only pins 2 (Anode) and 3 (Cathode) are electrically active. Pin 1 must remain unconnected in PCB layout and schematic symbol to avoid unintended coupling or mechanical stress on the die bond wire.

What is the maximum power dissipation of HZM3.3WA-JTR-E and how does it vary with temperature?

The HZM3.3WA-JTR-E has a maximum power dissipation of 200 mW at ambient temperature T_a = 25°C, as specified in the Absolute Maximum Ratings table. Above 25°C, P_d derates linearly - full derating to zero occurs at approximately 150°C, per the "Power Dissipation vs. Ambient Temperature" curve (Fig. 3) on page 5. This requires appropriate PCB copper area for thermal management in sustained operation.

Is HZM3.3WA-JTR-E RoHS compliant and halogen-free?

Yes - HZM3.3WA-JTR-E complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation referenced in the datasheet colophon (page 6). The MPAK package uses lead-free terminations and halogen-free molding compound, meeting JIS C 0950 and IEC 61249-2-21 standards for bromine and chlorine content.

How does the temperature coefficient of HZM3.3WA-JTR-E affect its performance in a 0–70°C operating range?

The HZM3.3WA-JTR-E exhibits a typical temperature coefficient of +0.02 mV/°C near 3.3 V, as shown in Fig. 2 on page 5. Over a 70°C span, this results in ~1.4 mV total drift - less than 0.04% of nominal V_Z. This low drift supports stable reference performance in commercial-grade applications without external compensation, unlike higher-voltage Zeners with stronger curvature.