Renesas HZM6.2ZMWATL-E

Overview

HZM6.2ZMWATL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 6.2 V (B3 grade: 6.26–6.53 V at 5 mA), with dynamic resistance of 50 Ω, reverse current ≤2 μA at 4.0 V, and power dissipation up to 200 mW in the MPAK package - commonly used in sensor biasing, ADC reference regulation, and power supply feedback loops.

For engineers reviewing the HZM6.2ZMWATL-E datasheet, HZM6.2ZMWATL-E pinout, HZM6.2ZMWATL-E application, or HZM6.2ZMWATL-E equivalent, key selection criteria include zener voltage tolerance (±2.5% typical), temperature coefficient (≈+0.025 mV/°C near 6.2 V), low leakage performance, surface-mount compatibility, and thermal derating behavior above 25°C ambient.

Technical Context

The HZM6.2ZMWATL-E operates as a two-terminal shunt regulator, maintaining stable output voltage across variable load currents by conducting excess current to ground when input exceeds its zener threshold. Its epitaxial planar construction ensures tight voltage distribution and low noise, critical for precision analog signal chains.

It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, with absolute maximum power dissipation of 200 mW at 25°C ambient - derating linearly to zero at 150°C per Fig.3. The device exhibits a positive temperature coefficient (~+0.025 mV/°C) in the 6.2 V range, enabling predictable drift compensation in temperature-sensitive references.

Key Specifications

Pinout & Package

MPAK package: ultra-compact surface-mount outline measuring 1.0 mm × 1.3 mm × 0.55 mm (L × W × H), optimized for high-density PCB layouts and automated assembly. Terminal 1 is NC (no connection), Terminal 2 is Anode, Terminal 3 is Cathode - polarity must be observed for correct shunt regulation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C6V2 and MMSZ4687, the HZM6.2ZMWATL-E provides the smallest footprint (1.0 mm × 1.3 mm), lowest dynamic resistance (50 Ω), and most favorable temperature coefficient (+0.025 mV/°C) for high-accuracy, space-constrained voltage reference applications - making it optimal for modern sensor nodes and miniaturized industrial controllers.

Availability

HZM6.2ZMWATL-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, microcontroller reference stabilization, optocoupler feedback regulation, and EEPROM voltage clamping requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for HZM6.2ZMWATL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for industrial, automotive, and infrastructure markets - headquartered in Tokyo, Japan.

The HZM-N Series is part of Renesas' discrete Zener portfolio engineered specifically for high-stability voltage reference and shunt regulation in space-constrained, thermally demanding environments - emphasizing tight grading, low noise, and MPAK manufacturability.

FAQ

What is the exact zener voltage range for HZM6.2ZMWATL-E at 5 mA test current?

The HZM6.2ZMWATL-E has a guaranteed zener voltage range of 6.26 V to 6.53 V when tested at I_Z = 5 mA and T_a = 25°C, corresponding to Grade B3 per the R07DS0358EJ0600 datasheet. This 4.2% total spread supports high-accuracy applications without external trimming, and the device maintains this specification across its qualified operating temperature range.

Is Pin 1 of HZM6.2ZMWATL-E electrically connected or unused?

Pin 1 of the HZM6.2ZMWATL-E is explicitly designated NC (No Connection) in the official Renesas datasheet - it is an unbonded terminal with no internal connection. PCB layout must leave Pin 1 unconnected; soldering or routing to this pad may cause mechanical stress or unintended parasitic coupling, compromising long-term reliability.

How does the temperature coefficient of HZM6.2ZMWATL-E affect its performance above 25°C?

The HZM6.2ZMWATL-E exhibits a positive temperature coefficient of approximately +0.025 mV/°C near its 6.2 V operating point, meaning its zener voltage increases linearly with junction temperature. At 85°C junction temperature, the shift is ~1.5 mV - well within the ±27 mV total tolerance band (6.26–6.53 V), ensuring stable operation in industrial environments without active compensation.

Can HZM6.2ZMWATL-E replace standard 6.2 V Zeners like 1N4735A in existing designs?

No - the HZM6.2ZMWATL-E uses a 3-pin MPAK package with Pin 1 (NC), Pin 2 (Anode), and Pin 3 (Cathode), whereas the through-hole 1N4735A is a 2-pin DO-41 device. Direct replacement requires PCB redesign to accommodate the different pin count, footprint (1.0 mm × 1.3 mm), and polarity orientation. Electrical equivalence exists, but mechanical compatibility does not.

What is the maximum allowable reverse voltage before significant leakage occurs in HZM6.2ZMWATL-E?

Per the datasheet's Electrical Characteristics table, the HZM6.2ZMWATL-E guarantees reverse current ≤2 μA when reverse voltage (V_R) is held at 4.0 V. Beyond this, leakage rises nonlinearly - at V_R = 5.5 V, typical leakage exceeds 10 μA. For low-power biasing, operation below 4.0 V ensures minimal current draw; regulation begins near 6.2 V where controlled breakdown occurs.