Renesas HZM6.8MFATR-E

Overview

HZM6.8MFATR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 6.86 V to 7.14 V at 5 mA test current, with dynamic resistance of 30 Ω max, power dissipation of 200 mW, and operates within –55°C to +150°C storage temperature range. It is commonly used in voltage regulation for sensor biasing, ADC reference conditioning, and power supply feedback networks.

For engineers reviewing the HZM6.8MFATR-E datasheet, HZM6.8MFATR-E pinout, HZM6.8MFATR-E application, or HZM6.8MFATR-E equivalent, key selection criteria include zener voltage tolerance (±2.5% typical), low dynamic impedance for stable regulation under load variation, MPAK surface-mount package compatibility with high-density PCB layouts, and thermal stability across industrial ambient conditions.

Technical Context

The HZM6.8MFATR-E employs a silicon epitaxial planar junction structure optimized for tight zener voltage control and low temperature coefficient near zero crossing (~0.02 mV/°C at 6.8 V). Its design targets stable DC reference generation rather than transient suppression or surge clamping.

It operates exclusively in reverse-bias breakdown mode with specified test conditions: I_Z = 5 mA, pulse width = 40 ms, and ambient temperature = 25°C. The device exhibits no forward conduction specification - its functionality is strictly defined by reverse zener characteristics and thermal derating per Fig.3.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-terminal plastic package with 1.0 mm × 1.3 mm footprint and 0.55 mm terminal pitch. Designed for reflow soldering and automated placement in high-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar zener voltage stabilization applications.

Compared with BZX84-C6V8LT1G and MMSZ4687T1G, the HZM6.8MFATR-E offers tighter voltage tolerance (±2.5% vs. ±5%), lower dynamic resistance (30 Ω vs. ≥35 Ω), and a dedicated NC pin enabling simplified layout in noise-sensitive analog sections - though it requires MPAK-specific land pattern and stencil design.

Availability

HZM6.8MFATR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, precision analog front-ends, and embedded microcontroller reset circuits requiring stable component supply and long-term manufacturability.

Supply support for HZM6.8MFATR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-stability, low-drift DC voltage regulation in space-constrained and thermally variable environments.

FAQ

What is the exact zener voltage range for HZM6.8MFATR-E at 5 mA?

The HZM6.8MFATR-E has a guaranteed zener voltage range of 6.86 V minimum to 7.14 V maximum when tested at I_Z = 5 mA, Ta = 25°C, per Renesas datasheet R07DS0358EJ0600 Rev.6.00. This corresponds to Grade B3 tolerance (±2.5%) and is verified using 40 ms pulse testing to avoid self-heating effects. The HZM6.8MFATR-E achieves this tight spec through epitaxial planar junction processing and laser-trimmed grading.

Does HZM6.8MFATR-E have a functional pin 1, and what happens if it's connected?

No - pin 1 of the HZM6.8MFATR-E is designated NC (No Connect) and contains no internal electrical connection. Connecting pin 1 to any net risks mechanical stress on the die bond or contamination-induced leakage paths. The HZM6.8MFATR-E datasheet explicitly states "1. NC" in the Pin Arrangement diagram and requires this terminal to remain unconnected in all PCB layouts. Misconnection does not damage the device but may compromise long-term reliability.

Can HZM6.8MFATR-E be used in place of a standard 6.8 V zener like 1N4734A?

No - the HZM6.8MFATR-E is not a direct replacement for through-hole zeners such as the 1N4734A. It uses an MPAK surface-mount package with three terminals (including NC), whereas the 1N4734A is DO-41 with two leads and no NC function. Additionally, the HZM6.8MFATR-E has tighter voltage tolerance (±2.5% vs. ±5%), lower dynamic resistance (30 Ω vs. 5 Ω typical but poorly controlled), and different thermal derating behavior. Substitution requires full layout and schematic revision.

What is the maximum allowable reverse current before regulation degrades in HZM6.8MFATR-E?

The HZM6.8MFATR-E maintains regulation integrity up to its rated test current of 5 mA. Beyond that, voltage deviation remains within spec until approaching the 200 mW power limit - e.g., at 10 mA, V_Z rises by ≤25 mV due to r_d × ΔI. However, sustained operation above 5 mA requires thermal validation: at 75°C ambient, maximum safe I_Z drops to ~3.2 mA per Fig.3 derating curve. The HZM6.8MFATR-E must never exceed 200 mW total dissipation regardless of current level.

Is HZM6.8MFATR-E compliant with RoHS and REACH requirements?

Yes - the HZM6.8MFATR-E meets EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No 1907/2006, as confirmed in Renesas' official environmental compliance documentation. The MPAK package uses lead-free matte tin plating, halogen-free molding compound, and cadmium-/phthalate-free materials. Full substance declarations and test reports for the HZM6.8MFATR-E are available upon request from Aetrix Electronics' regulatory team.