Renesas HZM6.8ZMFATR-E

Overview

HZM6.8ZMFATR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 6.86–7.14 V at 5 mA, dynamic resistance of 30 Ω max, power dissipation of 200 mW, and MPAK surface-mount package for high-density PCB layouts.

For engineers reviewing the HZM6.8ZMFATR-E datasheet, HZM6.8ZMFATR-E pinout, HZM6.8ZMFATR-E application, or HZM6.8ZMFATR-E equivalent, key selection criteria include zener voltage tolerance (±2.2% at grade B3), temperature coefficient (≈+0.035 mV/°C), reverse leakage (<2 µA at 5.5 V), junction temperature limit (150°C), and compatibility with automated SMT assembly on standard FR-4 boards.

Technical Context

The HZM6.8ZMFATR-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds its zener threshold. It uses epitaxial planar construction for tight voltage distribution and low noise performance.

Designed for DC biasing and precision reference applications, it exhibits a positive temperature coefficient near 6.8 V (≈+0.035 mV/°C), enabling predictable drift behavior in temperature-sensitive circuits. Its MPAK package supports thermal dissipation up to 200 mW at 25°C ambient, derating linearly above that point per Fig.3.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A, Renesas code MPAK(D)V), 3-pin surface-mount package with 1.0 mm × 1.3 mm footprint, 0.55 mm terminal pitch, and 0.35–0.5 mm lead width. NC pin enables dual-diode layout flexibility without functional impact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ4689T1G and BZX84-C6V8, the HZM6.8ZMFATR-E delivers tighter voltage control (±2.2% vs. ±5%), lower dynamic impedance (30 Ω vs. 40–60 Ω), and MPAK package compatibility for high-density industrial PCBs - making it optimal for 12-bit+ analog systems requiring long-term stability.

Availability

HZM6.8ZMFATR-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, portable device clamping, PLC analog outputs, and automotive body control modules requiring stable component supply, consistent lot-to-lot parametric performance, and RoHS-compliant packaging.

Supply support for HZM6.8ZMFATR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and enterprise applications.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-accuracy, low-noise DC stabilization in space-constrained industrial and instrumentation systems - emphasizing grade-specific V_Z consistency and thermal predictability.

FAQ

What is the exact zener voltage range specified for HZM6.8ZMFATR-E at 5 mA test current?

The HZM6.8ZMFATR-E has a guaranteed zener voltage range of 6.86 V to 7.14 V when tested at I_Z = 5 mA and T_a = 25°C, corresponding to Grade B3 tolerance per Renesas datasheet R07DS0358EJ0600. This ±2.2% window ensures precise regulation without post-production trimming. The HZM6.8ZMFATR-E achieves this specification using epitaxial planar process control and laser adjustment during manufacturing.

Does HZM6.8ZMFATR-E have a functional third pin, and what is its purpose?

No - Pin 1 of the HZM6.8ZMFATR-E is designated NC (No Connect) and is electrically isolated with no internal bond wire. Its presence maintains mechanical symmetry and layout compatibility across the HZM-N series, allowing standardized PCB footprints for multiple voltage grades. The active terminals are Pin 2 (Anode) and Pin 3 (Cathode); the NC pin simplifies variant management without affecting HZM6.8ZMFATR-E electrical operation.

What is the maximum reverse leakage current for HZM6.8ZMFATR-E, and at what voltage is it measured?

The maximum reverse leakage current for HZM6.8ZMFATR-E is 2 µA, measured at V_R = 5.5 V and T_a = 25°C. This low leakage ensures minimal parasitic loading in high-impedance bias networks and reference dividers. Because the HZM6.8ZMFATR-E operates as a shunt regulator, keeping I_R low directly improves power efficiency and stability in battery-powered or low-quiescent-current applications.

How does the temperature coefficient of HZM6.8ZMFATR-E affect its performance in a 0°C to 70°C operating range?

The HZM6.8ZMFATR-E exhibits a temperature coefficient of approximately +0.035 mV/°C near 6.8 V, resulting in a total drift of about ±2.5 mV across a 70°C span (0°C to 70°C). This translates to ±0.037% change in nominal voltage - well within 12-bit (0.024%) and acceptable for most industrial reference designs. The HZM6.8ZMFATR-E datasheet confirms this behavior via Fig.2, showing predictable positive drift without inflection points in this range.

Is HZM6.8ZMFATR-E compatible with lead-free reflow soldering processes, and what is its MSL rating?

Yes - the HZM6.8ZMFATR-E is qualified for lead-free reflow soldering per J-STD-020, with a Moisture Sensitivity Level (MSL) of 1 (unlimited floor life at ≤30°C/85% RH). Its MPAK package uses matte tin plating and passes JEDEC-standard thermal cycling tests. The HZM6.8ZMFATR-E's maximum peak reflow temperature is 260°C for 30 seconds, fully compatible with standard Pb-free profiles used in industrial and automotive PCB assembly lines.