Renesas HZM6.8ZMWATL-E

Overview

HZM6.8ZMWATL-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for voltage stabilization in low-power analog and reference circuits, with a nominal zener voltage of 6.86–7.14 V at 5 mA, dynamic resistance of 30 Ω max, power dissipation of 200 mW, and MPAK surface-mount package. It serves as a precision shunt regulator in power supply feedback loops and sensor biasing networks.

For engineers reviewing the HZM6.8ZMWATL-E datasheet, HZM6.8ZMWATL-E pinout, HZM6.8ZMWATL-E application, or HZM6.8ZMWATL-E equivalent, key selection criteria include zener voltage tolerance (±2.1% at grade B3), temperature coefficient (≈+0.03 mV/°C near 6.8 V), low dynamic impedance, thermal stability up to 150 °C junction temperature, and compatibility with high-density PCB assembly.

Technical Context

The HZM6.8ZMWATL-E operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current above its breakdown threshold. Its epitaxial planar construction ensures tight V_Z distribution and predictable temperature coefficient behavior across ambient temperatures from –55 °C to +150 °C.

Designed for DC voltage reference and overvoltage clamping, it exhibits low dynamic resistance (≤30 Ω at I_Z = 5 mA) and minimal leakage (<2 μA at V_R = 5.0 V), enabling accurate regulation in low-current bias networks and analog front-end protection circuits.

Key Specifications

Pinout & Package

Package: MPAK (JEITA code PLSP0003ZC-A), 3-pin surface-mount package with 1.0 mm × 1.3 mm footprint, 0.55 mm terminal pitch, and 0.16 mm typical lead thickness. Optimized for automated pick-and-place and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C6V8LT1G and MMSZ4687T1G, the HZM6.8ZMWATL-E delivers superior voltage stability (±2.1% vs. ±5%), lower dynamic resistance (30 Ω vs. ≥40 Ω), and smaller MPAK footprint - making it optimal for space-constrained, precision-regulated analog subsystems rather than general-purpose clamping.

Availability

HZM6.8ZMWATL-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB-C power delivery reference design, and automotive cabin control applications requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for HZM6.8ZMWATL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series is part of Renesas' discrete voltage reference portfolio, engineered for high-accuracy, low-drift stabilization in compact surface-mount form factors targeting cost-sensitive yet performance-demanding analog signal chains.

FAQ

What is the zener voltage range and test condition for HZM6.8ZMWATL-E?

The HZM6.8ZMWATL-E has a zener voltage range of 6.86 V to 7.14 V, measured at a test current of 5 mA. This specification corresponds to Grade B3 within the HZM-N Series and reflects tight process control for precision voltage reference applications. The HZM6.8ZMWATL-E maintains this range across ambient temperatures from –55 °C to +125 °C per datasheet characterization.

Does HZM6.8ZMWATL-E have a no-connect pin, and how should it be handled on the PCB?

Yes, Pin 1 of the HZM6.8ZMWATL-E is designated NC (No Connect) and must remain electrically unconnected on the PCB. Routing traces or placing copper pours under or adjacent to Pin 1 is not recommended, as it may introduce parasitic capacitance or thermal imbalance. The HZM6.8ZMWATL-E's MPAK package relies on Pins 2 (Anode) and 3 (Cathode) for full functionality; Pin 1 is structurally present but internally isolated.

What is the maximum power dissipation of HZM6.8ZMWATL-E, and how does it vary with ambient temperature?

The HZM6.8ZMWATL-E has a maximum power dissipation of 200 mW at an ambient temperature of 25 °C. Derating begins linearly above 25 °C, reaching zero dissipation at approximately 150 °C ambient - consistent with its 150 °C maximum junction temperature rating. The HZM6.8ZMWATL-E datasheet provides Fig.3 (Power Dissipation vs. Ambient Temperature) for exact derating curves based on PCB copper area and layout.

How does the temperature coefficient of HZM6.8ZMWATL-E compare to other zener voltages in the HZM-N Series?

The HZM6.8ZMWATL-E exhibits a positive temperature coefficient of approximately +0.03 mV/°C near its 6.8 V operating point, as shown in Fig.2 of the datasheet. This is typical for zeners in the 6–8 V range and contrasts with lower-voltage devices (e.g., HZM3.3N at ≈–0.02 mV/°C) and higher-voltage types (e.g., HZM12N at ≈+0.07 mV/°C). The HZM6.8ZMWATL-E's moderate γ_Z supports stable performance in ambient-temperature-varying applications without active compensation.

Is HZM6.8ZMWATL-E suitable for use in automotive applications, and what quality grade does it carry?

The HZM6.8ZMWATL-E is rated as a "Standard" quality grade device per Renesas' classification, intended for applications including industrial equipment, office electronics, and consumer devices - not for automotive safety-critical or under-hood high-reliability use unless validated per customer-specific AEC-Q101 stress testing. While its 150 °C junction rating and –55 °C to +150 °C storage range meet basic thermal requirements, the HZM6.8ZMWATL-E lacks formal AEC-Q101 qualification and is not approved for automotive powertrain or ADAS systems.