Renesas HZM6.8ZMWATR-E

Overview

HZM6.8ZMWATR-E from Renesas Electronics is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits. It delivers a nominal zener voltage of 6.86–7.14 V at 5 mA, with dynamic resistance ≤30 Ω, power dissipation up to 200 mW, and operates within –55°C to +150°C junction temperature range - commonly used in voltage regulation for sensor signal conditioning and microcontroller reference supplies.

For engineers reviewing the HZM6.8ZMWATR-E datasheet, HZM6.8ZMWATR-E pinout, HZM6.8ZMWATR-E application, or HZM6.8ZMWATR-E equivalent, key selection criteria include zener voltage tolerance (±2.2% at B3 grade), low dynamic impedance for stable regulation under load variation, MPAK surface-mount package compatibility with high-density PCB layouts, and thermal performance validated up to 150°C junction temperature.

Technical Context

The HZM6.8ZMWATR-E implements a silicon epitaxial planar junction structure optimized for stable reverse-breakdown behavior with minimal voltage drift over temperature. Its zener voltage exhibits a positive temperature coefficient of approximately +0.04 mV/°C near 6.8 V, enabling predictable tracking in compensated reference designs.

Rated for 200 mW power dissipation at 25°C ambient, its derating curve follows a linear reduction to zero at 150°C junction temperature. The device is tested using 40 ms pulse conditions to minimize self-heating during characterization, ensuring published V_Z, I_R, and r_d values reflect steady-state small-signal behavior.

Key Specifications

Pinout & Package

MPAK package: 3-terminal surface-mount plastic package with exposed die pad for thermal enhancement; dimensions 2.7 mm × 1.35 mm × 0.95 mm (L × W × H); weight 0.011 g; RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C6V8LT1G and MMSZ4688T1G, the HZM6.8ZMWATR-E offers tighter voltage tolerance (±2.2% vs. ±5%), lower dynamic resistance (≤30 Ω vs. ≥40 Ω), and superior high-temperature capability (150°C vs. 150°C max but with inferior derating), making it preferred for precision industrial and automotive reference designs where regulation stability under thermal stress is critical.

Availability

HZM6.8ZMWATR-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller reference circuits, and automotive cabin electronics requiring stable component supply with consistent parametric performance across temperature and volume production.

Supply support for HZM6.8ZMWATR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and infrastructure markets.

The HZM-N Series belongs to Renesas' precision discrete portfolio, engineered specifically for stable voltage reference and shunt regulation in space-constrained, thermally demanding applications - emphasizing low dynamic impedance, tight V_Z grading, and high-reliability packaging.

FAQ

What is the zener voltage range of the HZM6.8ZMWATR-E at 5 mA test current?

The HZM6.8ZMWATR-E has a zener voltage range of 6.86 V to 7.14 V when tested at I_Z = 5 mA, corresponding to Grade-B3 specification. This ±2.2% tolerance ensures predictable regulation without post-production trimming in most precision analog designs. The HZM6.8ZMWATR-E achieves this consistency via epitaxial planar junction processing and tight process control during wafer fabrication.

Does the HZM6.8ZMWATR-E have a usable anode connection?

No - Pin 1 of the HZM6.8ZMWATR-E is designated NC (No Connect) and is internally unconnected. Only Pins 2 (Anode) and 3 (Cathode) are electrically active. The HZM6.8ZMWATR-E must be operated in reverse-bias mode with cathode held at higher potential than anode; Pin 1 must remain unconnected or tied to ground only if required by PCB mechanical constraints, never to a signal net.

What is the maximum power dissipation of the HZM6.8ZMWATR-E at 70°C ambient temperature?

At 70°C ambient temperature, the HZM6.8ZMWATR-E supports approximately 140 mW maximum power dissipation, derived from its linear derating curve (200 mW at 25°C → 0 mW at 150°C). This value assumes standard JEDEC 2-layer PCB mounting per Fig.3 in the datasheet. Exceeding this limit risks junction temperature exceeding 150°C, potentially degrading long-term reliability of the HZM6.8ZMWATR-E.

Is the HZM6.8ZMWATR-E RoHS-compliant and halogen-free?

Yes - the HZM6.8ZMWATR-E meets RoHS Directive 2011/65/EU requirements and is manufactured as a halogen-free device per IEC 61249-2-21. Renesas confirms compliance in the product's official datasheet (R07DS0358EJ0600) and material declarations. This ensures the HZM6.8ZMWATR-E is suitable for consumer, industrial, and medical electronics subject to environmental compliance mandates.

How does the temperature coefficient of the HZM6.8ZMWATR-E affect its regulation accuracy over –40°C to +125°C?

The HZM6.8ZMWATR-E exhibits a positive temperature coefficient of approximately +0.04 mV/°C near 6.8 V, resulting in ~3.4 mV total drift over a 85°C span (–40°C to +125°C). This translates to ±0.05% V_Z shift relative to nominal - negligible in most non-critical references but relevant for high-precision systems. For improved stability, the HZM6.8ZMWATR-E is often paired with complementary tempcos in bandgap-derived references.