Renesas HZU10GTRF-E

Overview

HZU10GTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 10.0 V at I_Z = 0.5 mA, dynamic resistance Z_ZT = 380 Ω (typ), and ultra-low noise voltage approximately 1/3–1/10 that of the standard HZU series. It operates in surface-mount URP (Ultra small Resin Package) and is used in precision analog front-ends and low-drift reference circuits.

For engineers reviewing the HZU10GTRF-E datasheet, HZU10GTRF-E pinout, HZU10GTRF-E application, or HZU10GTRF-E equivalent, key selection criteria include its semi-logarithmic V_Z–I_Z linearity from 1 nA to 1 mA, temperature coefficient of −0.04 %/°C (≈ −4 mV/°C), and suitability for low-power, high-stability reference designs where noise and thermal drift are critical.

Technical Context

The HZU10GTRF-E belongs to the HZU-LL Series, engineered specifically for hard-knee Zener behavior and reduced noise generation versus legacy HZU parts. Its V_Z–I_Z curve exhibits semi-logarithmic linearity across six decades of current (1 nA to 1 mA), enabling stable operation under micro-current biasing.

It features a temperature coefficient γ_Z ≈ −0.04 %/°C - roughly half that of the base HZU series - and achieves this via epitaxial planar process optimization. The device is rated for P_d = 150 mW at T_a = 25°C and junction temperature up to 150°C, with storage range from −55°C to +150°C.

Key Specifications

Pinout & Package

Package: Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass ≈ 0.004 g. Surface-mount, 2-terminal configuration with cathode-marked lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with BZX84-C10LT1G and MMSZ5240B, the HZU10GTRF-E delivers superior low-noise operation, tighter thermal stability, and verified semi-logarithmic linearity - making it the only option among the three qualified for metrology-grade and low-drift analog signal chains.

Availability

HZU10GTRF-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-drift sensor excitation, and calibration-grade multimeter reference applications requiring stable component supply, long-term parametric consistency, and RoHS-compliant packaging.

Supply support for HZU10GTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and mixed-signal solutions for automotive, industrial, and enterprise applications.

The HZU-LL Series was designed specifically for ultra-low-noise, hard-knee Zener reference applications demanding sub-10 ppm/°C drift and microamp-level operational linearity - targeting metrology, precision instrumentation, and high-fidelity sensor interfaces.

FAQ

What is the nominal Zener voltage and test condition for HZU10GTRF-E?

The nominal Zener voltage of HZU10GTRF-E is 10.0 V, specified at test current I_Z = 0.5 mA. The guaranteed range is 9.5 V to 10.5 V under these conditions, per the Electrical Characteristics table in Renesas document REJ03G1216-0500. This tolerance supports calibration-grade use when paired with trimming or post-calibration compensation. The HZU10GTRF-E maintains this specification across its qualified operating temperature range.

Does HZU10GTRF-E have a documented noise voltage specification?

Yes - the HZU10GTRF-E datasheet explicitly states its noise voltage is "approximately 1/3 to 1/10 lower than the HZU series." While an absolute µV_RMS value is not tabulated, this comparative metric is confirmed in the Features section of REJ03G1216-0500 and reflects measured broadband noise reduction achieved through epitaxial planar process optimization. This makes HZU10GTRF-E distinct from generic Zener diodes lacking low-noise characterization.

What is the package type and mounting style of HZU10GTRF-E?

HZU10GTRF-E uses the Ultra small Resin Package (URP), also designated SC-76A and JEITA code PTSP0002ZA-A. It is a surface-mount, two-terminal device with cathode marked on terminal 1. The package measures 1.55 × 0.80 × 0.45 mm (min–max) and has a typical mass of 0.004 g, enabling high-density placement in space-constrained analog PCB layouts. No through-hole variant exists for the HZU10GTRF-E.

How does the temperature coefficient of HZU10GTRF-E compare to standard Zener diodes?

HZU10GTRF-E has a temperature coefficient γ_Z of approximately −0.04 %/°C (≈ −4 mV/°C), which is about half that of the baseline HZU series and significantly better than typical 10 V Zeners (often −0.06 to −0.10 %/°C). This value is confirmed in Figure 2 of REJ03G1216-0500 and enables drift below 10 ppm/°C in 10 V reference designs - a key differentiator for HZU10GTRF-E in thermally unstable environments.

Is HZU10GTRF-E suitable for low-current biasing applications?

Yes - HZU10GTRF-E is explicitly characterized for operation from I_Z = 1 nA to 1 mA, with semi-logarithmic V_Z–I_Z linearity across this full six-decade range. This enables stable regulation even at nanoampere bias currents, making it ideal for ultra-low-power reset circuits, energy-harvesting sensor nodes, and micropower instrumentation where traditional Zeners fail to maintain defined knee behavior. The HZU10GTRF-E datasheet validates this performance in Figure 1.