Renesas HZU6.8GTRF-E

Overview

HZU6.8GTRF-E from Renesas Electronics is a silicon planar Zener diode optimized for transient surge absorption in low-power signal lines, featuring a nominal Zener voltage of 6.8 V (min 6.47 V, max 7.14 V at 5 mA), 200 mW power dissipation, and ESD capability of ±30 kV per IEC 1000-4-2 (C = 150 pF, R = 330 Ω). It is housed in an ultra-small URP (SC-76A) surface-mount package and used in USB, audio, and sensor interface protection circuits.

For engineers reviewing the HZU6.8GTRF-E datasheet, HZU6.8GTRF-E pinout, HZU6.8GTRF-E application, or HZU6.8GTRF-E equivalent, key selection criteria include verified Zener voltage tolerance, dynamic resistance ≤30 Ω at 5 mA, ESD robustness, thermal derating above 25°C, and compatibility with automated SMT assembly on polyimide PCBs.

Technical Context

This device operates as a voltage-clamping element in reverse-biased mode, leveraging controlled avalanche breakdown to shunt transient energy away from sensitive downstream circuitry. Its low dynamic resistance (≤30 Ω) ensures minimal clamping voltage overshoot during fast transients.

The HZU6.8GTRF-E is rated for junction temperatures up to 150°C and storage from −55°C to +150°C, with power dissipation derated linearly above 25°C ambient-e.g., ~150 mW at 70°C on a standard polyimide board (20 mm × 15 mm × 0.8 mm).

Key Specifications

Pinout & Package

Package: Ultra-small Resin Package (URP), JEITA code SC-76A, Renesas code PTSP0002ZA-A, mass ≈ 0.004 g. Dimensions: A1 = 0.15–0.45 mm, A2 = 0.75–1.05 mm, b = 1.55–1.85 mm, D = 0.80 mm, E = 0.80 mm, e1 = 2.30 mm, l1 = 2.50 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener-based surge absorption applications.

Compared with SMZJ6.8A and BZX584-C6V8, the HZU6.8GTRF-E offers optimal balance of ultra-compact URP packaging, sub-30 Ω dynamic resistance, and proven IEC 1000-4-2 performance-making it preferred for space-limited, low-energy signal-line protection where thermal budget and board area are critical.

Availability

HZU6.8GTRF-E is available at Aetrix Electronics and suitable for USB interface protection, audio line ESD suppression, and low-voltage microcontroller I/O protection requiring stable component supply across high-mix, low-volume production runs.

Supply support for HZU6.8GTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The HZU-G Series was designed specifically for compact, high-reliability surge absorption in consumer and industrial signal interfaces-emphasizing low-profile packaging, repeatable Zener characteristics, and certified ESD robustness without external biasing.

FAQ

What is the Zener voltage tolerance of HZU6.8GTRF-E at 5 mA test current?

The HZU6.8GTRF-E has a specified Zener voltage range of 6.47 V (minimum) to 7.14 V (maximum) when tested at I_Z = 5 mA and T_a = 25°C. This ±5% tolerance ensures predictable clamping behavior across production lots and supports reliable overvoltage protection in 6.8 V nominal circuits. The HZU6.8GTRF-E maintains this specification under pulse conditions (P_w = 40 ms), as confirmed in Renesas' REJ03G1215-0300 datasheet Rev. 3.00.

Does HZU6.8GTRF-E meet IEC 61000-4-2 ESD immunity requirements?

Yes, the HZU6.8GTRF-E is rated for ±30 kV ESD immunity per IEC 1000-4-2 (the predecessor standard to IEC 61000-4-2), using C = 150 pF and R = 330 Ω in both forward and reverse directions across 10 pulses. This qualification is explicitly stated in the "Electrical Characteristics" table of the official Renesas datasheet. The HZU6.8GTRF-E achieves Level 4 compliance without external components, making it suitable for end-equipment certification.

What is the thermal derating behavior of HZU6.8GTRF-E above 25°C ambient?

The HZU6.8GTRF-E's power dissipation is linearly derated above 25°C ambient temperature, with full 200 mW capability only at T_a ≤ 25°C. On a standard polyimide board (20 mm × 15 mm × 0.8 mm), its P_d drops to approximately 150 mW at 70°C and reaches zero at 150°C. This derating curve is illustrated in Figure 2 of the Renesas datasheet REJ03G1215-0300. Designers must apply this curve when sizing copper pour or adjacent heat sources near the HZU6.8GTRF-E.

Is HZU6.8GTRF-E compatible with lead-free reflow soldering processes?

Yes, the HZU6.8GTRF-E's URP (SC-76A) package and internal construction are qualified for standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds. Renesas specifies compliance with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, meaning floor life is unlimited under dry pack conditions. The HZU6.8GTRF-E requires no special prebake or handling beyond standard MSL-1 SMT practices.

How does the dynamic resistance of HZU6.8GTRF-E affect clamping performance during fast transients?

The HZU6.8GTRF-E exhibits a maximum dynamic resistance (r_d) of 30 Ω at I_Z = 5 mA, directly determining voltage overshoot during rapid current surges. For example, a 1 A transient yields only ~30 V additional clamping voltage (ΔV = I × r_d), keeping total clamped voltage below 10 V-well within safe limits for 3.3 V or 5 V logic interfaces. This r_d value is measured under standardized pulse conditions and is critical for protecting high-speed data lines like USB 2.0, where the HZU6.8GTRF-E is routinely deployed.