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Renesas HZU8.2GTRF-E
- Part No.:
- HZU8.2GTRF-E
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- -
- Datasheet:
-
HZU8.2GTRF-E.pdf
- Description:
- TRANS VOLTAGE SUPPRESSOR DIODE
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Inventory:55,000
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Product details
Overview
HZU8.2GTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 8.2 V, dynamic resistance 450 Ω at IZT = 5 mA, and ultra-low noise voltage (~1/3–1/10 of standard HZU series). It operates within −55°C to +150°C storage range and dissipates up to 150 mW at 25°C ambient, packaged in ultra-small URP (SC-76A) surface-mount format.
For engineers reviewing the HZU8.2GTRF-E datasheet, HZU8.2GTRF-E pinout, HZU8.2GTRF-E application, or HZU8.2GTRF-E equivalent, key selection criteria include its semi-logarithmic VZ–IZ linearity from 1 nA to 1 mA, reduced temperature coefficient (~½ that of HZU series), and suitability for precision analog references where noise and thermal drift are critical.
Technical Context
This Zener diode employs epitaxial planar construction to achieve hard-knee breakdown characteristics and stable low-noise operation. Its VZ–IZ curve exhibits semi-logarithmic linearity across six decades of current (1 nA–1 mA), enabling predictable behavior in sub-microamp biasing and high-impedance reference nodes.
Designed for low-drift performance, the HZU8.2GTRF-E delivers a temperature coefficient of approximately −2.0 mV/°C (typical) and supports DC-tested Zener voltage specification with tight tolerance - confirmed by ∆VZ = VZ(0.5 mA) – VZ(0.05 mA) ≤ 1.5 V per datasheet note *3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 8.2 V (nominal, tested at IZ = 5 mA; ensures stable reference point in analog circuits) |
| Dynamic Resistance ZZT | 450 Ω (typical at IZT = 5 mA; determines output impedance and load regulation sensitivity) |
| Reverse Current IR | ≤100 nA at VR = 6.6 V (low leakage enables high-impedance bias networks without error) |
| Power Dissipation Pd | 150 mW (max at Ta = 25°C; defines safe DC operating envelope for PCB thermal design) |
| Junction Temperature Tj | 150°C (absolute max; sets thermal derating boundary for reliability in compact layouts) |
| VZ–IZ Linearity Range | 1 nA to 1 mA (semi-logarithmic linear region; supports ultra-low-current reference and sensing topologies) |
Pinout & Package
Package: Ultra Small Resin Package (URP), JEITA code SC-76A, Renesas code PTSP0002ZA-A, mass ≈ 0.004 g. Surface-mount, 2-terminal configuration with cathode marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node in reverse-bias operation; marked side on package body |
| 2 | Anode | Connected to lower-potential node (typically ground or return path); unmarked terminal |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise voltage generation | ~1/3–1/10 noise vs. standard HZU series - directly reduces RMS noise in precision reference paths |
| Reduced temperature coefficient | ≈½ that of HZU series - improves long-term stability over industrial temperature range |
| Semi-logarithmic VZ–IZ linearity | Valid from 1 nA to 1 mA - enables accurate modeling and use in nanoampere-biased circuits |
| Hard-knee Zener breakdown | Sharp, well-defined knee at rated VZ - minimizes uncertainty in turn-on threshold for clamping and regulation |
Applications
| High-Stability Analog Reference | Precision Sensor Biasing |
|---|---|
Use Scenario: Providing a stable 8.2 V reference for 16-bit ADCs and DACs in data acquisition systems operating across −40°C to +85°C. IC Role / Device Role / Timing Role: Zener voltage reference source establishing absolute scale for analog-to-digital conversion. Use Value: Low 1/f noise and <2.0 mV/°C tempco ensure <±0.02% full-scale drift over temperature, meeting ±0.5 LSB accuracy requirements. | Use Scenario: Biasing bridge-type pressure sensors in automotive engine control modules requiring minimal self-heating and long-term repeatability. IC Role / Device Role / Timing Role: Low-leakage (<100 nA) Zener element supplying excitation voltage to high-impedance sensor elements. Use Value: Sub-100 nA reverse current prevents loading errors in >10 MΩ sensor arms; URP package enables placement near sensing element. |
| Low-Power IoT Reference Node | Industrial Signal Conditioning |
Use Scenario: Generating a stable reference for nanopower comparators and wake-up circuits in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Ultra-low-current Zener reference operating down to 1 nA, enabling microamp-level system sleep modes. Use Value: Valid VZ–IZ linearity at 1 nA allows predictable scaling of reference voltage with programmable current sources, extending battery life. | Use Scenario: Stabilizing op-amp input offset in 4–20 mA transmitter front-ends exposed to 85°C ambient and EMI-rich factory floors. IC Role / Device Role / Timing Role: Hard-knee Zener clamp protecting amplifier inputs while maintaining reference integrity under transient surges. Use Value: Sharp knee and 150 mW power rating allow robust overvoltage protection without reference voltage sag during 1 kV ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C8V2LT1G | Zener voltage tolerance ±5%, higher dynamic resistance (600 Ω typ), no specified low-noise or semi-log linearity data | General-purpose regulation only; unsuitable for sub-µA bias or precision metrology | Select when cost sensitivity outweighs noise/tempco requirements and layout space permits larger SOT-23 |
| MMSZ4689-TP | 8.2 V nominal, but 1000 nA max IR at 6.6 V (10× higher leakage), unspecified tempco and noise performance | Limited to non-critical voltage clamping; not validated for reference-grade linearity | Acceptable for basic overvoltage protection where leakage and drift are non-critical |
Compared with BZX84-C8V2LT1G and MMSZ4689-TP, the HZU8.2GTRF-E provides verified low-noise operation, tighter thermal drift control, and documented semi-logarithmic conformance down to 1 nA - making it uniquely suitable for metrology-grade references where parameter traceability matters.
Availability
HZU8.2GTRF-E is available at Aetrix Electronics and suitable for high-stability analog reference, precision sensor biasing, and low-power IoT reference node applications requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for HZU8.2GTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and precision analog components for industrial, automotive, and infrastructure markets.
The HZU-LL Series is part of Renesas' precision Zener portfolio designed specifically for low-noise, hard-knee voltage reference applications demanding superior thermal stability and wide-current-range linearity in ultra-compact surface-mount packages.
FAQ
What is the nominal Zener voltage and test condition for HZU8.2GTRF-E?
The nominal Zener voltage of HZU8.2GTRF-E is 8.2 V, measured at IZ = 5 mA under DC conditions per the official Renesas datasheet REJ03G1216-0500. This value defines the primary reference point for circuit design and is supported by guaranteed min/max bounds derived from process characterization - ensuring repeatable performance across production lots of HZU8.2GTRF-E.
Does HZU8.2GTRF-E support operation below 1 µA, and what is its behavior there?
Yes, HZU8.2GTRF-E exhibits semi-logarithmic VZ–IZ linearity down to 1 nA, as explicitly confirmed in the datasheet. At 100 nA, its Zener voltage remains within specification, enabling use in ultra-low-power bias networks and nanopower monitoring circuits - a capability not guaranteed for standard Zeners and central to the design value of HZU8.2GTRF-E.
What is the temperature coefficient of HZU8.2GTRF-E, and how does it compare to legacy HZU parts?
HZU8.2GTRF-E has a typical temperature coefficient of −2.0 mV/°C, approximately half that of the original HZU series. This improvement directly reduces thermal drift in reference circuits - for example, limiting VZ shift to <±0.16 V over −40°C to +85°C ambient - a key differentiator confirmed in Figure 2 of the HZU8.2GTRF-E datasheet.
Is HZU8.2GTRF-E RoHS compliant and lead-free?
Yes, HZU8.2GTRF-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the manufacturing specifications stated in the REJ03G1216-0500 datasheet. The URP package uses lead-free solder-compatible terminations and meets JEDEC J-STD-020 moisture sensitivity level 1 - confirming suitability for standard reflow assembly of HZU8.2GTRF-E.
What package type and dimensions does HZU8.2GTRF-E use?
HZU8.2GTRF-E uses the Ultra Small Resin Package (URP), JEITA code SC-76A, Renesas code PTSP0002ZA-A. Its footprint measures 1.10 mm × 0.80 mm (max), height 0.45 mm (max), with 0.65 mm pitch between terminals - enabling high-density placement in space-constrained designs such as wearables and sensor nodes using HZU8.2GTRF-E.
HZU8.2GTRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- -
- Series:
- *
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- -
- Unidirectional Channels:
- -
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- -
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- -
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU8.2GTRF-E FAQ
1.How can I place an order for HZU8.2GTRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU8.2GTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU8.2GTRF-E reliable?
The price and inventory of HZU8.2GTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU8.2GTRF-E is usually 5 days.
3.What payment methods are accepted for HZU8.2GTRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU8.2GTRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU8.2GTRF-E?
HZU8.2GTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU8.2GTRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU8.2GTRF-E?
For technical support, including HZU8.2GTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU8.2GTRF-E requirements.
6.How does Aetrix verify that HZU8.2GTRF-E is sourced from the original manufacturer or authorized distributors?
All HZU8.2GTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU8.2GTRF-E meets industry standards.
7.What is the process for return or replacement of HZU8.2GTRF-E?
All HZU8.2GTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU8.2GTRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU8.2GTRF-E part is unused and in its original packaging.
Return procedure for HZU8.2GTRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZU8.2GTRF-E Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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