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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA120N04S5N014AUMA1

Name: IAUA120N04S5N014AUMA1
Brand: Infineon Technologies
SKU: IAUA120N04S5N014AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA120N04S5N014AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA120N04S5N014AUMA1.pdf

Description:: MOSFET_(20V 40V) PG-HSOF-5

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Product details

Overview

IAUA120N04S5N014AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 5 family, rated for 40 V V_DS, 1.4 mΩ R_DS(on) (max at V_GS = 10 V, I_D = 60 A), and 120 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature, is AEC-Q101 qualified, and features 100% single-pulse avalanche testing.

For engineers reviewing the IAUA120N04S5N014AUMA1 datasheet, IAUA120N04S5N014AUMA1 pinout, IAUA120N04S5N014AUMA1 application, or IAUA120N04S5N014AUMA1 equivalent, key selection criteria include its low R_DS(on) for high-efficiency 12 V/24 V automotive power stages, MSL3 reflow compatibility, and robust thermal performance in engine control units and battery disconnect switches.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in high-current DC-DC conversion and load switching. Its gate threshold voltage (2.2–3.4 V) enables reliable drive with standard 3.3 V or 5 V logic-level controllers, while the 1.10 K/W R_thJC supports high-power density layouts on thermally enhanced PCBs.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 60 A and 25 °C, with 45 ns reverse recovery time and 41 nC Q_rr, enabling efficient synchronous rectification and freewheeling in bidirectional power paths such as 48 V mild-hybrid systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive bus applications with margin against transients.
R_DS(on) max	1.4 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1.7 W conduction loss at 120 A, critical for high-current solenoid drivers.
I_D continuous	120 A at T_C = 25 °C - Chip-limited rating; package-limited per datasheet footnote, supporting high-side battery disconnects.
T_j max	175 °C - Qualified for under-hood environments including transmission control modules and EPS ECUs.
E_AS	120 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive load turn-off in motor drives.
Q_g	62–82 nC - Total gate charge enabling fast switching with moderate gate driver strength (e.g., 2 A peak).

Pinout & Package

Package: PG-HSOF-5-2 - Exposed-drain thermally enhanced surface-mount package with 5 terminals, designed for low-inductance, high-current PCB mounting and direct heatsinking via the drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source connection	Low-side reference node; tied to ground plane in high-side switch configurations.
2 (Gate)	Control input	High-impedance MOSFET gate requiring ESD-safe routing and local decoupling near driver IC.
3 (Drain)	Main current path (high-side)	Exposed metal pad - must be connected to large copper area for thermal dissipation and low-inductance return path.
4 (Source)	Source connection (redundant)	Parallel source terminal to reduce bond wire inductance and improve current sharing in high-frequency PWM.
5 (Drain)	Main current path (high-side)	Second exposed drain terminal - used for dual-side thermal interface or parallel layout in multi-phase designs.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical testing	Validated beyond standard automotive stress requirements, including enhanced HTGB and HTRB screening for long-term reliability in safety-critical ECUs.
100% single-pulse avalanche tested	Each unit undergoes controlled avalanche stress, ensuring guaranteed ruggedness in inductive load switching without external snubbers.
MSL3 rated (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements.
Optimized for 175 °C operation	Enables placement in high-temperature zones (e.g., near engines or inverters) without derating or forced cooling.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

12 V Battery Disconnect Switch

Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with 12 V supply and PWM frequencies up to 2 kHz.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; requires fast turn-on/turn-off (<20 ns delay + rise/fall) and low R_DS(on) to minimize heat generation.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss to <2 W at 120 A, enabling compact thermal design without heatsinks in space-constrained ECU housings.

Use Scenario: Solid-state replacement for mechanical relays in 12 V battery main disconnect circuits, supporting ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: High-side load switch with integrated diagnostics; requires avalanche ruggedness and 175 °C operation for under-hood deployment.

Use Value: 120 mJ E_AS and 100% avalanche testing ensure safe interruption of inductive fault currents during crash events or short-circuit conditions.

Electric Power Steering (EPS) Motor Phase Leg

48 V Mild-Hybrid DC-DC Converter Primary Switch

Use Scenario: Half-bridge high-side switch in 3-phase EPS motor inverter, operating at 10–20 kHz PWM with peak currents >100 A.

IC Role / Device Role / Timing Role: High-current, low-loss power stage element; demands low Q_g (62–82 nC) and tight R_DS(on) tolerance for balanced phase current sharing.

Use Value: 1.10 K/W R_thJC allows direct thermal coupling to aluminum housing, maintaining T_j < 150 °C even at full load in sealed EPS gearboxes.

Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V–12 V DC-DC converter for mild-hybrid vehicles, handling bidirectional power flow up to 5 kW.

IC Role / Device Role / Timing Role: Low-V_DS (40 V) high-efficiency switch with fast body diode (t_rr = 45 ns, Q_rr = 41 nC) for ZVS operation and reduced switching loss.

Use Value: Body diode V_SD = 0.8–1.1 V at 60 A enables <0.5 W conduction loss during reverse conduction, improving overall converter efficiency by ≥0.8% at 3 kW.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5N022AUMA1	R_DS(on) = 2.2 mΩ (max), lower I_D = 80 A, same PG-HSOF-5-2 package	Better thermal margin at lower current; less suitable for >100 A continuous loads	Select when system peak current ≤ 80 A and cost optimization is prioritized over minimal conduction loss.
IPB180N04S5H5ATMA1	R_DS(on) = 1.8 mΩ (max), higher P_tot = 190 W, TO-263-7 package	Larger footprint, higher thermal mass; suited for industrial-grade designs with manual soldering or heatsink mounting	Choose when board-level reflow is not feasible or when legacy TO-263 layout compatibility is required.

Compared with IAUZ40N04S5N022AUMA1 and IPB180N04S5H5ATMA1, IAUA120N04S5N014AUMA1 delivers the lowest R_DS(on) and highest continuous current in the OptiMOS™ 5 40 V portfolio, making it optimal for space-constrained, high-power automotive modules where thermal resistance and conduction loss are dominant design constraints.

Availability

IAUA120N04S5N014AUMA1 is available at Aetrix Electronics and suitable for engine control units, battery disconnect switches, and electric power steering systems requiring stable component supply across automotive production lifecycles.

Supply support for IAUA120N04S5N014AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-reliability, high-current switching in 12 V, 24 V, and 48 V vehicle electrical architectures.

FAQ

What is the maximum allowable gate-source voltage for IAUA120N04S5N014AUMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause threshold shift. Recommended drive range is 0 V to 10 V for standard enhancement-mode operation with sufficient noise margin.

Does IAUA120N04S5N014AUMA1 require a gate resistor for stability?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen parasitic oscillations caused by gate-drain capacitance and PCB trace inductance. The datasheet recommends R_G = 3.5 Ω for dynamic characterization; values outside 1–15 Ω may increase switching loss or risk shoot-through in half-bridge configurations.

Is the PG-HSOF-5-2 package compatible with automated optical inspection (AOI)?

Yes - the PG-HSOF-5-2 package uses coplanar, solderable terminals with defined solder mask openings and IPC-compliant footprint geometry. Its exposed drain pad and symmetric pin layout enable reliable AOI detection of solder joint quality, bridging, and tombstoning during SMT line inspection.

Can IAUA120N04S5N014AUMA1 be paralleled with identical units for higher current capacity?

Yes - the device's positive temperature coefficient of R_DS(on) (confirmed in Figure 8 of the datasheet) ensures inherent current sharing when paralleled. Designers must match gate drive impedance, minimize layout asymmetry, and verify thermal coupling to avoid hot-spot formation; typical derating is 15% per additional unit beyond two devices.

IAUA120N04S5N014AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4828 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-2

IAUA120N04S5N014AUMA1 FAQ

1.How can I place an order for IAUA120N04S5N014AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA120N04S5N014AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA120N04S5N014AUMA1 reliable?

The price and inventory of IAUA120N04S5N014AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA120N04S5N014AUMA1 is usually 5 days.

3.What payment methods are accepted for IAUA120N04S5N014AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA120N04S5N014AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA120N04S5N014AUMA1?

IAUA120N04S5N014AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA120N04S5N014AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA120N04S5N014AUMA1?

For technical support, including IAUA120N04S5N014AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA120N04S5N014AUMA1 requirements.

6.How does Aetrix verify that IAUA120N04S5N014AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA120N04S5N014AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA120N04S5N014AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA120N04S5N014AUMA1?

All IAUA120N04S5N014AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA120N04S5N014AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA120N04S5N014AUMA1 part is unused and in its original packaging.

Return procedure for IAUA120N04S5N014AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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