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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA180N08S5N026AUMA1

Name: IAUA180N08S5N026AUMA1
Brand: Infineon Technologies
SKU: IAUA180N08S5N026AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA180N08S5N026AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA180N08S5N026AUMA1.pdf

Description:: MOSFET_(75V 120V( PG-HSOF-5

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Product details

Overview

IAUA180N08S5N026AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™-5 family, rated for 80 V V_DS, 2.6 mΩ R_DS(on) at V_GS = 10 V and I_D = 90 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in engine control units, DC-DC converters, and battery disconnect circuits.

For engineers reviewing the IAUA180N08S5N026AUMA1 datasheet, IAUA180N08S5N026AUMA1 pinout, IAUA180N08S5N026AUMA1 application, or IAUA180N08S5N026AUMA1 equivalent, key selection criteria include R_DS(on) at elevated T_j, avalanche ruggedness (E_AS = 546 mJ), thermal resistance (R_thJC = 0.84 K/W), and MSL3 reflow compatibility up to 260 °C.

Technical Context

This device implements a trench-gate silicon MOSFET architecture optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its 80 V rating supports load-dump transient tolerance, while the 2.6 mΩ on-resistance enables efficient high-current operation at 180 A chip-limited continuous drain current.

The integrated body diode exhibits 59 ns reverse recovery time and 85 nC Q_rr, enabling robust synchronous rectification and freewheeling in bidirectional power stages. All units undergo 100% single-pulse avalanche testing per AEC-Q101 requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a without clamping circuitry
R_DS(on)	2.6 mΩ @ V_GS = 10 V, I_D = 90 A - Enables <1.5 W conduction loss at 90 A, reducing heatsink requirements
I_D (continuous)	180 A - Chip-limited current rating; system-level current limited by PCB layout and thermal design
E_AS	546 mJ - Single-pulse avalanche energy ensures robustness against inductive switching stress in motor drives
T_j max	175 °C - Supports operation in under-hood environments including transmission control modules
R_thJC	0.84 K/W - Low junction-to-case thermal resistance allows direct mounting to cold plates or heatsinks
Q_g	87 nC - Total gate charge determines driver strength requirement for <20 ns turn-on delay and 7 ns rise time

Pinout & Package

Package: PG-HSOF-5-4 - Exposed-drain thermally enhanced surface-mount package with 5 terminals, designed for high-power density and low-inductance layout in automotive power stages.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current path (high-side or low-side)	Exposed copper pad - primary thermal path to PCB heatsink; electrically connected to all internal die drains
2 (Source)	Reference node for gate drive and current sensing	Low-inductance source connection; used for Kelvin source sensing in precision current monitoring
3 (Gate)	Control input for channel modulation	High-impedance MOS gate requiring <1.3 Ω series resistance to damp ringing during fast switching
4 (Source)	Secondary source terminal	Kelvin source pin - isolated from power source path to eliminate IR drop error in gate drive loop
5 (Drain)	Secondary drain connection	Redundant drain terminal to reduce package inductance and improve current sharing across parallel devices

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended electrical testing and 175 °C operation validated for safety-critical ECU applications
100% single-pulse avalanche tested	Guarantees minimum 546 mJ energy handling without degradation in real-world inductive fault events
MSL3 rated up to 260 °C peak reflow	Enables compatibility with lead-free assembly processes without popcorn or delamination risk
Optimized gate charge profile	Q_gd/Q_gs ratio of ~0.75 minimizes Miller-induced shoot-through risk in half-bridge configurations
Low reverse recovery charge (Q_rr)	85 nC at 50 A/100 A/µs - reduces diode switching loss and EMI in synchronous buck and H-bridge topologies

Applications

Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch for fuel injector or ignition coil drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12 V/24 V inductive loads with precise PWM timing and fast turn-off to prevent coil saturation.

Use Value: 2.6 mΩ R_DS(on) limits conduction loss to <0.6 W at 50 A, enabling compact packaging within tight ECU space constraints.

Use Scenario: Primary-side synchronous rectifier in bi-directional 12 V ↔ 48 V DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology operating at 100–200 kHz with zero-voltage switching.

Use Value: 59 ns t_rr and 85 nC Q_rr minimize reverse recovery loss and voltage overshoot during commutation.

Battery Disconnect Unit (BDU)

Electric Power Steering (EPS) Motor Driver

Use Scenario: Main contactor replacement in high-current battery isolation circuits for EV/HEV traction battery management.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting 180 A continuous and 546 A pulsed current during crash shutdown or precharge sequencing.

Use Value: 546 mJ E_AS withstands worst-case short-circuit energy without failure, meeting ASIL-B functional safety requirements.

Use Scenario: Half-bridge leg in three-phase inverter driving 3 kW EPS brushless DC motor.

IC Role / Device Role / Timing Role: High-frequency switching element with gate plateau voltage of 4.9 V ensuring stable Miller immunity during dV/dt > 50 V/ns.

Use Value: 0.84 K/W R_thJC enables direct cold-plate mounting, maintaining T_j < 150 °C at 120 A RMS with forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5N019AUMA1	Lower R_DS(on) (1.9 mΩ), lower I_D (140 A), same V_DS and package	Better efficiency at medium current (<100 A); reduced avalanche energy (320 mJ)	Select when conduction loss dominates and avalanche stress is minimal
IPB180N08S5H5ATMA1	Same R_DS(on) (2.6 mΩ), higher I_D (200 A), TO-263-7 package instead of PG-HSOF-5-4	Larger footprint, higher thermal mass, less suitable for ultra-thin modules	Select when board-level thermal design favors through-hole or larger heatsink interface

Compared with IAUZ40N08S5N019AUMA1, IAUA180N08S5N026AUMA1 trades slightly higher R_DS(on) for 72% greater avalanche energy and 40 A higher chip-limited current-critical for BDU and starter-generator applications. Versus IPB180N08S5H5ATMA1, it offers identical electrical specs but in a lower-profile, surface-mount package optimized for space-constrained automotive modules.

Availability

IAUA180N08S5N026AUMA1 is available at Aetrix Electronics and suitable for engine control units, battery disconnect units, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive production lifecycles.

Supply support for IAUA180N08S5N026AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-reliability, high-current switching in safety-critical 12 V/24 V/48 V vehicle subsystems-including powertrain, chassis, and electrification systems.

FAQ

What is the maximum allowable gate-source voltage for IAUA180N08S5N026AUMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of 0 V to 10 V for reliable enhancement-mode switching. Operation above 15 V risks permanent gate oxide damage, while below 4.9 V may result in incomplete turn-on due to gate plateau characteristics.

Does IAUA180N08S5N026AUMA1 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) and matched dynamic parameters (Q_g, C_iss, t_r/t_f) enable stable current sharing. Designers must ensure symmetrical PCB layout, matched gate drive impedance (<2 Ω), and thermal coupling via shared heatsink to avoid thermal runaway.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the diode's 59 ns t_rr, 85 nC Q_rr, and 0.9–1.2 V V_SD at 90 A make it viable for synchronous rectification up to 200 kHz. However, external Schottky diodes may be preferred above 300 kHz due to lower Q_rr and faster recovery.

How does the PG-HSOF-5-4 package differ from standard SO-8 or TO-263 in thermal performance?

PG-HSOF-5-4 uses an exposed-drain copper pad directly soldered to a 2-layer 2 oz Cu PCB thermal pad, achieving R_thJC = 0.84 K/W-3× better than SO-8 (≈2.5 K/W) and comparable to TO-263 (≈0.75 K/W)-while maintaining surface-mount compatibility and 1.2 mm profile for low-profile automotive modules.

IAUA180N08S5N026AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5980 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-4

IAUA180N08S5N026AUMA1 FAQ

1.How can I place an order for IAUA180N08S5N026AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA180N08S5N026AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA180N08S5N026AUMA1 reliable?

The price and inventory of IAUA180N08S5N026AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA180N08S5N026AUMA1 is usually 5 days.

3.What payment methods are accepted for IAUA180N08S5N026AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA180N08S5N026AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA180N08S5N026AUMA1?

IAUA180N08S5N026AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA180N08S5N026AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA180N08S5N026AUMA1?

For technical support, including IAUA180N08S5N026AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA180N08S5N026AUMA1 requirements.

6.How does Aetrix verify that IAUA180N08S5N026AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA180N08S5N026AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA180N08S5N026AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA180N08S5N026AUMA1?

All IAUA180N08S5N026AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA180N08S5N026AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA180N08S5N026AUMA1 part is unused and in its original packaging.

Return procedure for IAUA180N08S5N026AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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