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Infineon Technologies IAUA180N10S5N029AUMA1

Part No.:
IAUA180N10S5N029AUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
5-PowerSFN
Datasheet:
AetrixIAUA180N10S5N029AUMA1.pdf
Description:
MOSFET_(75V 120V( PG-HSOF-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,926

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Product details

Overview

IAUA180N10S5N029AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-4 package, rated for 100 V VDS, 2.9 mΩ RDS(on) at VGS = 10 V and ID = 90 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It serves as a high-current main switch in 12 V/24 V automotive power distribution systems including battery disconnect and motor control.

For engineers reviewing the IAUA180N10S5N029AUMA1 datasheet, IAUA180N10S5N029AUMA1 pinout, IAUA180N10S5N029AUMA1 application, or IAUA180N10S5N029AUMA1 equivalent, key selection criteria include RDS(on) stability over temperature, single-pulse avalanche energy (EAS = 561 mJ), gate charge (Qg = 81–105 nC), and MSL3 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in automotive DC-DC converters and high-side load switches. Its 2.3–2.9 mΩ RDS(on) range (VGS = 10 V, ID = 90 A) and 1.4 Ω typical gate resistance support robust gate drive design under high dV/dt conditions.

The MOSFET features 100% unclamped inductive switching (UIS) tested to 561 mJ at TC = 25 °C, and reverse diode parameters include VSD = 0.9–1.2 V at IF = 90 A and trr = 62 ns - enabling efficient freewheeling in H-bridge motor drivers without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - supports 24 V automotive systems with ≥2× voltage margin against load dump transients
RDS(on)2.9 mΩ max at VGS = 10 V, ID = 90 A - enables <1.5 W conduction loss at 90 A continuous current
ID (chip-limited)180 A - defines absolute thermal limit under ideal heatsinking; system-level current limited by PCB layout
EAS561 mJ - verified single-pulse avalanche energy ensures reliability during inductive turn-off events
Tj max175 °C - allows operation in engine bay environments without derating below ambient 125 °C
Qg105 nC max - determines gate driver power requirement and switching speed trade-off
PackagePG-HSOF-5-4 - thermally enhanced surface-mount package with exposed drain pad for low RthJC = 0.68 K/W

Pinout & Package

PG-HSOF-5-4 is a 5-pin, thermally optimized surface-mount package with integrated heat slug on the drain side. The package footprint complies with JEDEC MO-274 and supports automated optical inspection (AOI) and high-reliability reflow soldering per MSL3.

Pin/TerminalCircuit RoleDesign Meaning
1 (Drain)Main power path outputInternally connected to exposed metal pad - primary thermal path to PCB copper pour
2 (Source)Power return referenceLow-inductance source connection; used for Kelvin sensing in precision current monitoring designs
3 (Gate)Control inputHigh-impedance MOSFET gate requiring <105 nC total charge for full enhancement
4 (Source)Power return referenceDual-source configuration reduces source inductance and improves switching stability
5 (Drain)Main power path outputSecond drain terminal - parallel path to Pin 1 for lower RDS(on) and improved current sharing

Key Features

FeatureDesign Value
AEC-Q101 qualified + extended electrical testingValidated for automotive life-cycle stress including HTGB, HTRB, and UIS beyond standard AEC requirements
100% UIS avalanche testedEach unit screened for EAS ≥ 561 mJ - eliminates field failure risk from inductive energy spikes
MSL3 rated to 260 °C peak reflowCompatible with lead-free assembly processes without popcorn or delamination risk
Optimized gate charge profileQgd/Qg ratio of ~23% - balances switching speed and voltage overshoot in hard-switched topologies
Robust body diodetrr = 62 ns, Qrr = 99 nC - enables zero-voltage switching (ZVS) assist in resonant converters

Applications

Engine Start-Stop ControlElectric Power Steering (EPS)

Use Scenario: High-current battery isolation during engine cranking to prevent ECU brownout.

IC Role / Device Role / Timing Role: Main high-side power switch controlling 12 V battery feed to auxiliary loads.

Use Value: 180 A chip-limited current and 175 °C rating ensure uninterrupted operation during repeated cold-cranking cycles.

Use Scenario: Bidirectional motor phase switching in 3-phase EPS inverters.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology driving brushless DC motor windings.

Use Value: 2.9 mΩ RDS(on) minimizes conduction loss at 60–90 A peak phase current, reducing thermal stress on motor controller PCB.

48 V Mild Hybrid DC-DC ConverterAutomotive HVAC Blower Motor Driver

Use Scenario: Synchronous rectification in 48 V-to-12 V bidirectional buck-boost converter.

IC Role / Device Role / Timing Role: Secondary-side power MOSFET operating in synchronous rectifier mode with 100 kHz–500 kHz switching.

Use Value: Low Qrr (99 nC) and fast trr (62 ns) reduce reverse recovery losses and enable ZVS transition at light loads.

Use Scenario: PWM-controlled high-current blower motor interface in climate control systems.

IC Role / Device Role / Timing Role: High-side load switch managing up to 150 A stall current in brushed DC motor circuits.

Use Value: 561 mJ avalanche energy withstands back-EMF spikes during abrupt motor shutdown without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IAUZ40N10S5N030AUMA1100 V, 3.0 mΩ RDS(on), 140 A ID, same PG-HSOF-5-4 packageLower current rating; reduced thermal margin in sustained 100+ A operationPreferred where board space is constrained and peak current ≤140 A
IPB180N10S5H029AUMA1100 V, 2.9 mΩ RDS(on), 180 A ID, PG-HSOF-8-2 package (8-pin)Higher pin count enables separate Kelvin source sensing; 0.55 K/W RthJCChosen when ultra-low RthJC and precise current sensing are required

Compared with IAUZ40N10S5N030AUMA1 and IPB180N10S5H029AUMA1, IAUA180N10S5N029AUMA1 delivers identical RDS(on) and current capability in a compact 5-pin thermally optimized package - making it optimal for cost-sensitive, space-constrained 12 V/24 V automotive power modules where dual-source routing suffices.

Availability

IAUA180N10S5N029AUMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, and HVAC blower motor control requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUA180N10S5N029AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V/48 V vehicle subsystems subject to harsh thermal and electrical stress.

FAQ

What is the maximum allowable gate-source voltage for IAUA180N10S5N029AUMA1?

The absolute maximum VGS is ±20 V per the datasheet. Operation above +15 V or below –10 V risks permanent gate oxide damage. For reliable enhancement, VGS should be maintained between 4.7 V (plateau voltage) and 10 V - higher voltages reduce RDS(on) but increase Qg demand and ESD sensitivity.

Does IAUA180N10S5N029AUMA1 require a gate resistor in automotive applications?

Yes - a gate resistor (typically 3.5–10 Ω) is required to dampen ringing, control dV/dt, and limit peak gate current during switching. Infineon's recommended test condition uses RG = 3.5 Ω; values below 2 Ω increase risk of oscillation and shoot-through in bridge configurations.

How does the dual-source pin configuration improve performance?

Pins 2 and 4 are both internally connected to source - this reduces effective source inductance by ~40% versus single-source packages, minimizing voltage overshoot during turn-off and improving current sharing in paralleled devices. It also enables Kelvin source sensing for accurate current measurement without disturbing the main power loop.

Is IAUA180N10S5N029AUMA1 suitable for 48 V mild hybrid systems?

Yes - its 100 V VDS rating provides sufficient margin for 48 V nominal systems experiencing ISO 16750-2 load dump transients up to 65 V. Combined with 175 °C Tj max and 561 mJ EAS, it supports reliable operation in bidirectional DC-DC converters and regenerative braking interfaces.

IAUA180N10S5N029AUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
5-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7673 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
221W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOF-5-4

IAUA180N10S5N029AUMA1 FAQ

1.How can I place an order for IAUA180N10S5N029AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA180N10S5N029AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IAUA180N10S5N029AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA180N10S5N029AUMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA180N10S5N029AUMA1 transactions.

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IAUA180N10S5N029AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA180N10S5N029AUMA1?

For technical support, including IAUA180N10S5N029AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA180N10S5N029AUMA1 requirements.

6.How does Aetrix verify that IAUA180N10S5N029AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA180N10S5N029AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA180N10S5N029AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA180N10S5N029AUMA1?

All IAUA180N10S5N029AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA180N10S5N029AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA180N10S5N029AUMA1 part is unused and in its original packaging.

Return procedure for IAUA180N10S5N029AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IAUA180N10S5N029AUMA1 Tags

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