Infineon Technologies IAUA210N10S5N024AUMA1

Overview

IAUA210N10S5N024AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-4 package, rated for 100 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, and qualified to AEC-Q101 with 175 °C operating temperature. It serves as a high-current switching element in 12 V/24 V automotive power distribution systems including battery disconnect and motor drive half-bridges.

For engineers reviewing the IAUA210N10S5N024AUMA1 datasheet, IAUA210N10S5N024AUMA1 pinout, IAUA210N10S5N024AUMA1 application, or IAUA210N10S5N024AUMA1 equivalent, key selection criteria include its 210 A chip-limited continuous drain current, 100% avalanche-tested ruggedness, MSL3 reflow compatibility up to 260 °C, and integrated body diode with 104 nC Q_rr and 63 ns t_rr.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in automotive DC-DC converters and high-side load switches. Its gate threshold voltage (2.2–3.8 V) enables robust TTL/CMOS-level drive, while the 1.4 Ω typical gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The MOSFET features a thermally enhanced PG-HSOF-5-4 package with exposed drain pad for low 0.63 K/W R_thJC, enabling high-power operation at T_C = 85 °C with 26 A DC current rating. Its 6689 pF C_iss and 41 pF Crss support fast switching at 50 V bus voltages with minimal Miller-induced shoot-through risk.

Key Specifications

Pinout & Package

PG-HSOF-5-4 is a surface-mount, thermally enhanced 5-pin package with exposed drain pad on bottom side for direct PCB thermal coupling. Pin 1 is Source, Pin 2 is Gate, Pin 3 is Source, Pin 4 is Drain (exposed pad), Pin 5 is Source - forming a 3-source/1-gate/1-drain configuration optimized for low-inductance high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IAUZ40N10S5N012 and IPB180N10N5, IAUA210N10S5N024AUMA1 uniquely balances ultra-low R_DS(on), 210 A current headroom, and compact HSOF-5-4 packaging - making it optimal for next-gen 12 V/24 V high-power modules where both current capacity and board-level thermal management are critical.

Availability

IAUA210N10S5N024AUMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUA210N10S5N024AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V–48 V vehicle electrical architectures under extreme thermal and electrical stress.

FAQ

What is the maximum allowable gate-source voltage for IAUA210N10S5N024AUMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of 0 to 15 V. Exceeding 20 V risks permanent gate oxide damage. The device's 2.2–3.8 V V_GS(th) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers when used with appropriate gate resistors to limit dv/dt-induced false triggering.

Does IAUA210N10S5N024AUMA1 require a negative gate voltage for safe turn-off in high-noise automotive environments?

No, it does not require negative gate drive. Its 3.8 V maximum V_GS(th) and 1.4 Ω internal gate resistance provide sufficient noise immunity for 12 V automotive systems. However, a –2 V to 0 V turn-off bias improves immunity in >100 V transient zones (e.g., near alternator outputs) and is supported within the ±20 V rating.

How is the 210 A "chip-limited" current rating determined, and what does it mean for PCB design?

The 210 A rating reflects the silicon die's intrinsic current-handling limit under ideal thermal conditions (T_j ≤ 175 °C, case temperature maintained at 25 °C). In practice, PCB copper area, thermal vias, and airflow determine actual usable current - typically 26 A DC at T_C = 85 °C. Layout must allocate ≥400 mm² of 2 oz copper connected to the exposed drain pad via ≥12 thermal vias.

Can IAUA210N10S5N024AUMA1 be paralleled with identical units without external current-sharing components?

Yes, due to its positive temperature coefficient of R_DS(on) (2.5 mΩ at 25 °C → ~3.5 mΩ at 150 °C), paralleling up to four units is feasible with matched gate drive and symmetrical PCB layout. Thermal coupling between devices must be minimized, and gate traces should be length-matched within 2 mm to avoid dynamic current imbalance during switching transitions.