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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA220N08S5N021AUMA1

Name: IAUA220N08S5N021AUMA1
Brand: Infineon Technologies
SKU: IAUA220N08S5N021AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA220N08S5N021AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA220N08S5N021AUMA1.pdf

Description:: MOSFET_(75V 120V( PG-HSOF-5

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Product details

Overview

IAUA220N08S5N021 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-4 package, rated for 80 V V_DS, 2.1 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in engine control units, battery disconnect switches, and 48 V mild-hybrid DC-DC converters.

For engineers reviewing the IAUA220N08S5N021 datasheet, IAUA220N08S5N021 pinout, IAUA220N08S5N021 application, or IAUA220N08S5N021 equivalent, key selection criteria include its 220 A chip-limited continuous drain current, 100% avalanche-tested ruggedness, MSL3 reflow compatibility, and low gate charge (Q_g = 105 nC max) for fast switching in high-efficiency automotive power stages.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current automotive DC applications. Its 2.1 mΩ R_DS(on) enables <1.5 W conduction loss at 100 A, while Q_gd = 28 nC and t_r/t_f = 9/19 ns support efficient 100 kHz+ PWM operation.

The integrated body diode features 69 nC Q_rr and 54 ns t_rr, enabling robust synchronous rectification and freewheeling in bidirectional converters. Thermal design is supported by R_thJC = 0.71 K/W and 275 W P_tot at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V system bus with 2× safety margin against transients
R_DS(on)	2.1 mΩ max at V_GS = 10 V, I_D = 100 A - Enables ≤2.1 W conduction loss at rated current
I_D (chip-limited)	220 A - Allows oversizing for peak load handling without external current sharing
Q_g	105 nC max - Reduces gate drive power and enables fast turn-on with standard 1–2 A drivers
T_j max	175 °C - Permits operation in under-hood environments without derating below 150 °C ambient
E_AS	677 mJ - Withstands single-pulse inductive energy up to 677 mJ without failure
R_thJC	0.71 K/W - Enables direct heatsink mounting for >200 W thermal dissipation capability

Pinout & Package

PG-HSOF-5-4 is a surface-mount, thermally enhanced 5-pin package with exposed drain pad for low-inductance, high-current PCB routing and efficient heat transfer to internal copper planes or external heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power path drain connection	Internally connected to large copper pad; primary thermal and current path to PCB ground plane
2 (Source)	Power return reference node	Low-inductance source return path; critical for stable gate drive referencing in high-dI/dt switching
3 (Gate)	Control input for channel modulation	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and layout parasitics
4 (Source)	Secondary source connection	Redundant source bond for reduced package resistance and improved current sharing across die
5 (Drain)	Secondary drain connection	Additional drain bond supporting parallel current paths and lower overall R_DS(on) and L_PD

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical testing	Validated for automotive life-cycle stress including HTGB, HTRB, and UHAST beyond standard AEC requirements
100% unclamped inductive avalanche tested	Each unit withstands single-pulse E_AS = 677 mJ - eliminates need for external snubbers in inductive loads
MSL3 rated to 260 °C peak reflow	Compatible with standard lead-free SMT assembly without popcorn or delamination risk
OptiMOS™-5 trench-gate superjunction architecture	Delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation for higher efficiency in 48 V systems
Green product (RoHS compliant)	Meets EU RoHS Directive 2011/65/EU and halogen-free per IEC 61249-2-21

Applications

Engine Control Unit (ECU) High-Side Switch

48 V Mild-Hybrid DC-DC Converter Primary Switch

Use Scenario: High-side switching of fuel injector or ignition coil drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12–48 V inductive loads with precise 1–10 ms on-time pulses.

Use Value: 220 A rating allows safe handling of 3× peak inrush currents; 175 °C T_j ensures reliability during sustained high-load operation.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V starter battery and 48 V Li-ion storage.

IC Role / Device Role / Timing Role: High-current, high-frequency (100–300 kHz) main power switch in hard-switched topology.

Use Value: Low 2.1 mΩ R_DS(on) and 105 nC Q_g reduce conduction and switching losses simultaneously, improving conversion efficiency above 96 %.

Electric Power Steering (EPS) Motor Phase Leg

Automotive Battery Disconnect Switch

Use Scenario: Upper/lower switch in 3-phase inverter driving 48 V EPS motor with peak phase current >150 A.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating with <100 ns dead-time constraints and high dI/dt (>5 kA/s).

Use Value: Low Crss (60 pF max) minimizes Miller-induced shoot-through risk; robust 677 mJ E_AS handles motor regeneration spikes.

Use Scenario: Solid-state replacement for mechanical contactor in 48 V battery management system for isolation and fault protection.

IC Role / Device Role / Timing Role: Normally-open, high-reliability power switch enabling controlled connect/disconnect during startup, shutdown, and fault events.

Use Value: AEC-Q101 qualification and 100 % avalanche test ensure fail-safe behavior during load dump or short-circuit events without fuse dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5N027	Higher R_DS(on) (2.7 mΩ), lower I_D (180 A), same V_DS and package	Suitable for lower-current 48 V modules where thermal margin permits higher on-resistance	Select when cost sensitivity outweighs 10 % conduction loss increase and peak current stays below 180 A
IPB180N08S5H5	Same R_DS(on) (2.1 mΩ), but PG-TO263-7 package with higher R_thJA (22.8 K/W vs. 0.71 K/W)	Better suited for through-hole or discrete heatsink mounting rather than compact SMT designs	Choose only if board-level thermal design requires TO-263 footprint and forced-air cooling is available

Compared with IAUZ40N08S5N027 and IPB180N08S5H5, IAUA220N08S5N021 offers the highest current capability and lowest thermal resistance in SMT form factor-critical for space-constrained, high-power-density automotive modules where junction-to-case cooling is essential.

Availability

IAUA220N08S5N021 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid converters, and electric power steering systems requiring stable component supply and long-term automotive-grade availability.

Supply support for IAUA220N08S5N021 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 12 V/48 V vehicle electrical architectures demanding AEC-Q101 reliability and low-loss switching performance.

FAQ

What is the maximum allowable gate-source voltage for IAUA220N08S5N021?

The absolute maximum V_GS is ±20 V, with typical gate drive operating between 0 V (off) and 10 V (fully enhanced). Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping or zener protection to prevent overshoot during fast switching transitions, especially in high-noise automotive environments.

Does IAUA220N08S5N021 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. For 100 kHz switching with 2 A gate driver, a 3.5 Ω resistor is validated in Infineon's reference design (V_DD = 40 V, I_D = 100 A). Lower values (<2 Ω) increase EMI risk; higher values (>10 Ω) degrade switching speed and increase switching losses.

Can IAUA220N08S5N021 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) (2.5 mΩ at −60 °C → 5.5 mΩ at 175 °C) enables inherent current sharing. Successful paralleling requires matched gate drive layout, symmetrical PCB copper pours, and identical source inductance per device to avoid dynamic imbalance during turn-on/turn-off transitions.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is characterized for I_S = 220 A continuous (T_C = 25 °C) and V_SD = 1.2 V max at 100 A and 25 °C. Its 69 nC Q_rr and 54 ns t_rr support efficient synchronous rectification up to 300 kHz, provided gate timing avoids cross-conduction and thermal design accommodates diode conduction losses.

IAUA220N08S5N021AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 220A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7219 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 211W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-4

IAUA220N08S5N021AUMA1 FAQ

1.How can I place an order for IAUA220N08S5N021AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA220N08S5N021AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA220N08S5N021AUMA1 reliable?

The price and inventory of IAUA220N08S5N021AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA220N08S5N021AUMA1 is usually 5 days.

3.What payment methods are accepted for IAUA220N08S5N021AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA220N08S5N021AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA220N08S5N021AUMA1?

IAUA220N08S5N021AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA220N08S5N021AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA220N08S5N021AUMA1?

For technical support, including IAUA220N08S5N021AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA220N08S5N021AUMA1 requirements.

6.How does Aetrix verify that IAUA220N08S5N021AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA220N08S5N021AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA220N08S5N021AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA220N08S5N021AUMA1?

All IAUA220N08S5N021AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA220N08S5N021AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA220N08S5N021AUMA1 part is unused and in its original packaging.

Return procedure for IAUA220N08S5N021AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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