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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA250N04S6N007EAUMA1

Name: IAUA250N04S6N007EAUMA1
Brand: Infineon Technologies
SKU: IAUA250N04S6N007EAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA250N04S6N007EAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA250N04S6N007EAUMA1.pdf

Description:: MOSFET_(20V 40V)

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Product details

Overview

IAUA250N04S6N007EAUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 6 family, rated for 40 V V_DS, 0.7 mΩ max R_DS(on) at 10 V V_GS, and 380 A chip-limited continuous drain current. It operates up to 175 °C junction temperature, qualified per AEC-Q101, and features 100% single-pulse avalanche testing for robustness in high-reliability vehicle subsystems such as 12 V battery disconnect and high-current motor control.

For engineers reviewing the IAUA250N04S6N007EAUMA1 datasheet, IAUA250N04S6N007EAUMA1 pinout, IAUA250N04S6N007EAUMA1 application, or IAUA250N04S6N007EAUMA1 equivalent, key selection criteria include its 0.55 mΩ typical R_DS(on) at 100 A/10 V, 192 W power dissipation at T_C = 25 °C, MSL3 reflow compatibility, and integrated body diode with 1300 A pulsed forward current capability.

Technical Context

This device implements a trench-based silicon MOSFET structure optimized for low conduction loss and fast switching in 12 V automotive power rails. Its gate threshold voltage (2.2–3.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while the 4.2 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The 6444 pF input capacitance and 1944 pF output capacitance-measured at V_DS = 25 V-define its dynamic behavior in high-frequency DC-DC converters and PWM-driven loads. The 94 nC total gate charge and 28 nC gate-to-source charge enable efficient drive with moderate gate driver ICs, minimizing switching losses in high-duty-cycle applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery system overvoltage protection and load dump tolerance
R_DS(on), max	0.7 mΩ at V_GS = 10 V, I_D = 100 A - Enables <100 mW conduction loss at 100 A, critical for thermal management in compact modules
I_D, continuous	380 A chip-limited - Supports high-current battery switching without external current sharing
T_j, max	175 °C - Allows operation in under-hood environments with minimal derating
E_AS	250 mJ - Withstands single-pulse inductive energy without failure in motor drive freewheeling paths
Q_g, total	94 nC - Determines gate driver power requirement and switching speed trade-off in 10–100 kHz applications
V_GS(th)	2.2–3.0 V - Ensures compatibility with microcontroller GPIOs and low-voltage gate drivers

Pinout & Package

IAUA250N04S6N007EAUMA1 uses the PG-HSOF-5-1 package-a thermally enhanced, surface-mount, 5-terminal leadless module with exposed drain pad for low-inductance, high-current PCB mounting. The package supports MSL3 reflow up to 260 °C and delivers 0.78 K/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1–D4)	Main current path (source-connected internally)	Four parallel drain terminals reduce package inductance and improve current sharing in high-di/dt switching
Source (S1–S2)	Reference node for gate drive and current sensing	Dual source pins minimize source inductance, stabilizing gate control and enabling accurate Kelvin sensing
Gate (G)	Control terminal for channel formation	Single gate pin with 1 Ω typical gate resistance; requires low-impedance driver to manage 94 nC charge

Key Features

Feature	Design Value
AEC-Q101 qualification + extended electrical testing	Validated beyond standard automotive stress requirements, including HTGB, HTRB, and UHAST, ensuring field reliability in safety-critical systems
100% single-pulse avalanche tested	Each unit withstands 250 mJ energy at I_D = 55 A, enabling use in unclamped inductive switching without external snubbers
0.55 mΩ typical R_DS(on) at 100 A/10 V	Reduces conduction loss by >25% vs. prior OptiMOS™ 5 generation, directly lowering heatsink size and system cost
Integrated body diode with 1300 A pulsed rating	Supports high-current freewheeling in BLDC motor phases and regenerative braking without discrete diode addition
RoHS-compliant green product	Meets EU Directive 2011/65/EU and automotive ELV requirements, with no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE

Applications

Automotive Battery Disconnect Switch

High-Current DC Motor Driver

Use Scenario: Isolating 12 V battery from chassis electronics during sleep mode or fault conditions.

IC Role / Device Role / Timing Role: High-side power switch controlling main battery feed with fast turn-off (<30 ns fall time) to meet ISO 16750-2 load dump immunity.

Use Value: 0.7 mΩ R_DS(on) limits voltage drop to <265 mV at 380 A, preserving system efficiency and reducing thermal stress on busbars.

Use Scenario: Driving 12 V brushed or BLDC motors in power seats, HVAC blowers, and active suspension actuators.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter half-bridge, handling 250 A peak phase current with 19 ns fall time.

Use Value: 1300 A pulsed diode current rating enables safe freewheeling during PWM dead-time without external diodes or shoot-through risk.

12 V Starter Generator Interface

Automotive DC-DC Converter Primary Switch

Use Scenario: Managing bidirectional power flow between 12 V battery and 48 V starter-generator in mild hybrid architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier and power switch in buck-boost converter stage, operating at 20–50 kHz with 27 ns turn-off delay.

Use Value: 175 °C max junction temperature allows sustained 300 A operation in confined engine bay enclosures without forced cooling.

Use Scenario: Primary-side high-current switch in 12 V to 5 V/3.3 V point-of-load converters for ADAS ECUs and infotainment processors.

IC Role / Device Role / Timing Role: Hard-switched MOSFET with 14 ns rise time and 6444 pF C_iss, optimized for ZVS-capable topologies at 300–500 kHz.

Use Value: 94 nC Q_g enables efficient gate driving with Infineon's 1EDN7512B, reducing driver losses by 35% versus higher-Q alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027	Higher R_DS(on) (2.7 mΩ), lower I_D (120 A), OptiMOS™ 5 generation	Targeted for space-constrained 40 A–80 A auxiliary loads (e.g., lighting, pumps); not rated for >200 A continuous	Select when board area is critical and current demand is ≤120 A; avoid for battery main switch or motor phase legs
IPB180N04S4-02	Same 40 V rating, 2.0 mΩ R_DS(on), TO-263-7 package, AEC-Q101 qualified	Larger footprint and higher thermal resistance (1.2 K/W); suited for legacy designs using through-hole or larger SMD footprints	Prefer for retrofit upgrades where PG-HSOF-5-1 layout change is impractical; expect ~3× higher conduction loss at 250 A

Compared with IAUZ40N04S5L027 and IPB180N04S4-02, IAUA250N04S6N007EAUMA1 delivers 3.8× lower R_DS(on) than the former and 2.9× lower than the latter-directly translating to reduced thermal design burden and higher power density in next-generation 12 V automotive power stages.

Availability

IAUA250N04S6N007EAUMA1 is available at Aetrix Electronics and suitable for automotive battery management, high-current motor control, and 12 V/48 V DC-DC conversion requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUA250N04S6N007EAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 6 Power-Transistor product line, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive power networks-including battery disconnect, motor drives, and hybrid energy interfaces.

FAQ

What is the maximum allowable gate-source voltage for IAUA250N04S6N007EAUMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause parasitic turn-on or junction breakdown. Recommended drive range is 0 V to 10 V for optimal R_DS(on) and reliability.

Does IAUA250N04S6N007EAUMA1 require a gate resistor, and if so, what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 12 V automotive motor drive applications, a 3.5 Ω resistor is used in the reference test circuit (per datasheet Figure 10). Lower values (1–2 Ω) improve switching speed but increase EMI; higher values (5–10 Ω) reduce ringing at the cost of increased switching losses.

Can IAUA250N04S6N007EAUMA1 be used in paralleled configurations?

Yes-the device supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Datasheet Figure 8 confirms R_DS(on) increases with junction temperature, enabling self-balancing. Layout symmetry, matched gate drive paths, and Kelvin source connections are mandatory to ensure equal current distribution across units.

Is the body diode in IAUA250N04S6N007EAUMA1 suitable for synchronous rectification?

No-the integrated body diode has a 0.8–1.1 V forward voltage at 125 A and 60 ns reverse recovery time, making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling and fault clamping only. For synchronous operation, an external Schottky or GaN FET must be used in anti-parallel configuration.

IAUA250N04S6N007EAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 435A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 0.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 151 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9898 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-4

IAUA250N04S6N007EAUMA1 FAQ

1.How can I place an order for IAUA250N04S6N007EAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA250N04S6N007EAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA250N04S6N007EAUMA1 reliable?

The price and inventory of IAUA250N04S6N007EAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA250N04S6N007EAUMA1 is usually 5 days.

3.What payment methods are accepted for IAUA250N04S6N007EAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA250N04S6N007EAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA250N04S6N007EAUMA1?

IAUA250N04S6N007EAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA250N04S6N007EAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA250N04S6N007EAUMA1?

For technical support, including IAUA250N04S6N007EAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA250N04S6N007EAUMA1 requirements.

6.How does Aetrix verify that IAUA250N04S6N007EAUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA250N04S6N007EAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA250N04S6N007EAUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA250N04S6N007EAUMA1?

All IAUA250N04S6N007EAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA250N04S6N007EAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA250N04S6N007EAUMA1 part is unused and in its original packaging.

Return procedure for IAUA250N04S6N007EAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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