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Infineon Technologies IAUA250N04S6N008AUMA1

Part No.:
IAUA250N04S6N008AUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
5-PowerSFN
Datasheet:
AetrixIAUA250N04S6N008AUMA1.pdf
Description:
OPTIMOS POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,950

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Product details

Overview

IAUA250N04S6N008AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-1 package, rated for 40 V VDS, 0.8 mΩ max RDS(on) at 10 V VGS, and 340 A chip-limited continuous drain current. It operates up to 175 °C, qualified per AEC-Q101, and supports high-current motor control and DC-DC conversion in engine management and battery disconnect systems.

For engineers reviewing the IAUA250N04S6N008AUMA1 datasheet, IAUA250N04S6N008AUMA1 pinout, IAUA250N04S6N008AUMA1 application, or IAUA250N04S6N008AUMA1 equivalent, key selection factors include its 0.60 mΩ typical RDS(on) at 100 A/10 V, 100% avalanche testing, MSL3 reflow compatibility, and integrated body diode with 55 ns trr and 62 nC Qrr.

Technical Context

This OptiMOS™ 6 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V/48 V automotive power stages. Its gate threshold voltage (2.2–3.0 V) enables robust TTL/CMOS drive compatibility while maintaining noise immunity.

The MOSFET integrates a co-packaged freewheeling diode with 0.8–1.1 V forward voltage at 125 A and exhibits 51 A single-pulse avalanche current capability. Thermal resistance RthJC is 0.87 K/W, supporting high-power density designs on compact PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V/48 V automotive bus applications
RDS(on), max0.8 mΩ at VGS = 10 V, ID = 100 A - Enables <1 W conduction loss at 250 A in high-efficiency inverters
ID, continuous340 A (chip-limited) - Supports peak load currents in starter-alternator and traction inverter modules
Tj operating range–55 °C to +175 °C - Validated for under-hood environments including engine bay and transmission control units
Avalanche energy EAS250 mJ - Withstands inductive switching transients without external snubbers in motor drives
Qg, total81–109 nC - Enables efficient gate driving with standard 1–2 A gate drivers at ≤100 kHz switching
trr / Qrr55 ns / 62 nC - Reduces reverse recovery losses in synchronous rectification and bidirectional DC-DC converters

Pinout & Package

Package: PG-HSOF-5-1 - Thermally enhanced exposed-drain DSO-style leadless package with 5 terminals, optimized for low-inductance high-current routing and direct heatsink mounting.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D1–D4)Main current path (source of heat)Four parallel drain pads provide low thermal resistance (RthJC = 0.87 K/W) and reduce current crowding
Source (S1–S2)Reference node for gate drive and current sensingDual source terminals minimize source inductance for stable high-speed switching
Gate (G)Control terminal for channel modulationSingle gate pad with 0.9 Ω internal gate resistance ensures controlled turn-on/turn-off dV/dt

Key Features

FeatureDesign Value
AEC-Q101 qualified + extended electrical test coverageValidated beyond standard automotive stress requirements, including 100% avalanche testing per unit
OptiMOS™ 6 trench-superjunction architectureDelivers 20% lower RDS(on) × Qg figure-of-merit vs. prior generation for improved efficiency at 50–100 kHz
MSL3 compliant (260 °C peak reflow)Enables standard SMT assembly without moisture sensitivity concerns or baking requirements
Integrated body diode with low Qrr62 nC reverse recovery charge supports ZVS operation in phase-shifted full-bridge topologies
Green product (RoHS compliant)Meets EU Directive 2011/65/EU with no exemptions required for lead-free soldering compatibility

Applications

Engine Start-Stop System48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current battery disconnect and cranking assist during engine restart cycles.

IC Role / Device Role / Timing Role: Main power switch controlling bidirectional energy flow between 12 V starter battery and 48 V Li-ion auxiliary battery.

Use Value: 340 A continuous rating and 175 °C operation ensure reliability across cold-cranking (-40 °C) and hot-idle (150 °C under-hood) conditions.

Use Scenario: Primary-side synchronous rectifier in dual-active-bridge (DAB) isolated DC-DC converter.

IC Role / Device Role / Timing Role: High-side switching element in 48 V → 12 V power transfer with ZVS capability.

Use Value: Low 0.60 mΩ RDS(on) and 55 ns trr minimize conduction and recovery losses at 100 kHz switching frequency.

Electric Power Steering (EPS) InverterOn-Board Charger (OBC) Input Stage

Use Scenario: Three-phase inverter bridge driving brushless DC motor in steering column actuator.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack configuration handling 200 A peak phase current.

Use Value: Dual-source terminals reduce parasitic inductance, suppressing voltage spikes during 500 V/µs dV/dt events in fault conditions.

Use Scenario: AC-DC front-end PFC switch in bi-directional OBC for EVs.

IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode (CCM) at 65 kHz.

Use Value: 250 mJ single-pulse avalanche energy eliminates need for external clamping in line-voltage surge events (IEC 61000-4-5).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IAUZ40N04S5L027RDS(on) = 2.7 mΩ (higher), 40 V, PG-HSOF-8 package, 120 A IDLower current capacity; suited for auxiliary loads (e.g., HVAC blowers) rather than main traction pathsSelect when board space allows larger footprint and thermal budget permits higher conduction loss
IPB180N04S4-02RDS(on) = 2.0 mΩ, TO-263-7 package, 180 A ID, AEC-Q101 qualifiedHigher RDS(on) and lower current rating; lacks MSL3 reflow rating and 175 °C validationPrefer for legacy designs using through-hole or wave-soldered assemblies where thermal margin is less constrained

Compared with IAUZ40N04S5L027 and IPB180N04S4-02, IAUA250N04S6N008AUMA1 delivers 3× lower RDS(on) and 2× higher current capability in the same PG-HSOF-5-1 footprint, enabling smaller heatsinks and higher power density in next-gen 48 V architectures.

Availability

IAUA250N04S6N008AUMA1 is available at Aetrix Electronics and suitable for engine start-stop systems, 48 V mild hybrid converters, electric power steering inverters, and on-board chargers requiring stable component supply across automotive production lifecycles.

Supply support for IAUA250N04S6N008AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 6 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V and 48 V vehicle electrical architectures.

FAQ

What is the maximum allowable gate-source voltage for IAUA250N04S6N008AUMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –4 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in high-dV/dt environments like motor drives.

Does IAUA250N04S6N008AUMA1 require external gate resistors for stable operation?

Yes - although the device has an internal gate resistance of 0.9 Ω, external gate resistors (typically 2.2–10 Ω) are required to control dI/dt and suppress oscillation during turn-on/turn-off. This is critical in high-current applications to avoid shoot-through in half-bridge configurations and ensure reliable gate driver IC operation.

How is thermal performance validated for this MOSFET in automotive under-hood conditions?

Thermal validation includes junction-to-case resistance measurement (RthJC = 0.87 K/W), transient thermal impedance characterization (ZthJC) up to 100 ms, and 175 °C steady-state operation testing per AEC-Q101. Real-world validation covers thermal cycling from –55 °C to +175 °C over 1,000 cycles and power cycling under 340 A load with 100% duty cycle.

Can IAUA250N04S6N008AUMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient of RDS(on) (increasing with Tj) enables inherent current sharing. Successful paralleling requires matched gate drive layout (equal trace length/inductance), symmetrical source connections, and individual gate resistors. Derating to 85% of total rated current per device is recommended for long-term reliability.

IAUA250N04S6N008AUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 6
Package/Case:
5-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
51A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
0.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:
109 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7088 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
172W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOF-5-1

IAUA250N04S6N008AUMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IAUA250N04S6N008AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IAUA250N04S6N008AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA250N04S6N008AUMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA250N04S6N008AUMA1 transactions.

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IAUA250N04S6N008AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA250N04S6N008AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA250N04S6N008AUMA1?

For technical support, including IAUA250N04S6N008AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA250N04S6N008AUMA1 requirements.

6.How does Aetrix verify that IAUA250N04S6N008AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA250N04S6N008AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA250N04S6N008AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA250N04S6N008AUMA1?

All IAUA250N04S6N008AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA250N04S6N008AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA250N04S6N008AUMA1 part is unused and in its original packaging.

Return procedure for IAUA250N04S6N008AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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