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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA250N08S5N018AUMA1

Name: IAUA250N08S5N018AUMA1
Brand: Infineon Technologies
SKU: IAUA250N08S5N018AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA250N08S5N018AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA250N08S5N018AUMA1.pdf

Description:: MOSFET_(75V 120V( PG-HSOF-5

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Product details

Overview

IAUA250N08S5N018 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™-5 family, rated for 80 V V_DS, 1.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, and qualified to AEC-Q101 with 175 °C maximum junction temperature. It delivers high-current switching in engine control units, electric power steering, and 48 V mild-hybrid DC-DC converters.

For engineers reviewing the IAUA250N08S5N018 datasheet, IAUA250N08S5N018 pinout, IAUA250N08S5N018 application, or IAUA250N08S5N018 equivalent, key selection criteria include its 1.8 mΩ on-resistance at 100 A, 813 mJ single-pulse avalanche energy, MSL3 reflow compatibility, and validated performance under 175 °C continuous operation in automotive power stages.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction loss and fast switching in high-current automotive power conversion. Its gate threshold voltage (2.2–3.8 V) enables robust drive with standard 12 V gate drivers, while the 96–125 nC total gate charge supports efficient PWM control up to 100 kHz in synchronous rectification topologies.

The integrated body diode exhibits 60 ns reverse recovery time and 84 nC Q_rr at 50 A/100 A/µs, enabling reliable freewheeling in inductive loads such as solenoids and motor phases. Thermal resistance R_thJC of 0.63 K/W ensures effective heat transfer to heatsink-mounted PCBs in compact ECU modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V system bus with 2× safety margin against transients in automotive ISO 7637-2 load-dump events.
R_DS(on)	1.8 mΩ @ V_GS=10 V, I_D=100 A - Enables ≤18 W conduction loss at 100 A, critical for thermal management in space-constrained ECUs.
I_D (chip-limited)	250 A - Allows short-duration peak current handling during cranking or motor startup without derating.
E_AS	813 mJ - Withstands single-pulse inductive energy from 125 A turn-off without failure, verified per AEC-Q101 stress test.
T_j(max)	175 °C - Rated for continuous operation in under-hood environments including transmission control modules and battery disconnect units.
Q_g	96–125 nC - Determines gate driver power requirement; compatible with Infineon's 2EDN752x half-bridge drivers for <1 µs switching transitions.
C_iss	6704–8715 pF - Impacts high-frequency gate drive stability and EMI filtering design in >50 kHz DC-DC stages.

Pinout & Package

IAUA250N08S5N018 uses the PG-HSOF-5-4 package: a surface-mount, thermally enhanced 5-pin leadless module with exposed drain pad for direct PCB thermal coupling. The package supports MSL3 reflow up to 260 °C and features solderable side-wettable flanks for automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power source return path	Low-inductance connection to ground plane; shared with pins 2 and 3 for parallel current routing.
2 (Source)	Power source return path	Redundant source terminal to reduce package resistance and improve current sharing in high-I_D layouts.
3 (Source)	Power source return path	Third source pin enabling symmetrical layout for balanced thermal distribution across multi-layer PCBs.
4 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; routed away from power traces to avoid noise coupling.
5 (Drain)	High-side power output	Exposed copper pad connected internally to die drain; must be soldered to large thermal copper area for R_thJC = 0.63 K/W.

Key Features

Feature	Design Value
Extended AEC-Q101 qualification	Validated beyond standard stress levels for 15-year automotive life in under-hood applications.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 813 mJ, ensuring field reliability in inductive switching faults.
Robust 175 °C operation	Enables integration into high-temperature zones (e.g., near exhaust manifolds or inverters) without derating.
Green product (RoHS compliant)	Meets EU Directive 2011/65/EU and JIG-101A requirements for lead-free assembly and hazardous substance restriction.
MSL3 reflow capability	Compatible with standard SMT reflow profiles up to 260 °C peak, eliminating need for special process controls.

Applications

Engine Control Unit (ECU)

Electric Power Steering (EPS)

Use Scenario: High-current fuel injector driver with 12 V supply and 20 A peak load.

IC Role / Device Role / Timing Role: Low-side switch controlling solenoid actuation timing with <1 µs turn-on delay and minimal V_SD drop during freewheeling.

Use Value: 1.8 mΩ R_DS(on) reduces power loss by 42% vs. legacy 3.2 mΩ devices, lowering thermal stress on adjacent microcontroller.

Use Scenario: 48 V motor phase leg in dual-motor EPS with 150 A peak current demand.

IC Role / Device Role / Timing Role: High-current half-bridge switch operating at 20–50 kHz PWM, leveraging 250 A chip-limited rating for torque surge handling.

Use Value: 813 mJ E_AS withstands back-EMF spikes during sudden motor deceleration, eliminating need for external snubbers.

48 V Mild-Hybrid DC-DC Converter

Battery Disconnect Unit (BDU)

Use Scenario: Synchronous rectifier in bidirectional 3 kW buck-boost converter between 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Secondary-side switch with low Q_g/R_DS(on) ratio enabling >97% efficiency at 100 A output.

Use Value: 96–125 nC Q_g allows use of low-power gate drivers (e.g., 2EDN7524), reducing auxiliary supply burden.

Use Scenario: Main contactor replacement in 48 V battery pack with 200 A continuous load and fault interruption.

IC Role / Device Role / Timing Role: Solid-state isolation switch activated during crash detection or overcurrent events.

Use Value: 175 °C T_j(max) supports uninterrupted operation during thermal runaway events where ambient exceeds 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5N022	Higher R_DS(on) (2.2 mΩ), lower I_D (180 A), same package and AEC-Q101 grade	Suitable for lower-current 48 V systems (≤150 A) with relaxed thermal budget	Select when cost optimization outweighs conduction loss reduction in non-critical power stages.
IPB180N08S5H5	Same R_DS(on) (1.8 mΩ), higher I_D (300 A), TO-263-7 package with different thermal interface	Preferred for air-cooled industrial inverters requiring higher peak current headroom	Choose only if board-level thermal design accommodates larger footprint and higher mounting force.

Compared with IAUZ40N08S5N022 and IPB180N08S5H5, IAUA250N08S5N018 uniquely balances 250 A chip-limited current, 1.8 mΩ on-resistance, and PG-HSOF-5-4 package thermal performance-making it optimal for space-constrained, high-reliability automotive modules where both peak current and steady-state loss matter.

Availability

IAUA250N08S5N018 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild-hybrid DC-DC converters requiring stable component supply across extended vehicle lifecycles.

Supply support for IAUA250N08S5N018 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical architectures under extreme thermal and mechanical stress.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 202 A per the datasheet's I_D vs. T_C curve (Figure 2). This value reflects thermal limitation of the PG-HSOF-5-4 package under forced-air cooling conditions and assumes V_GS ≥ 6 V and adequate PCB copper area.

Does IAUA250N08S5N018 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 8) ensures inherent current sharing when multiple units are paralleled. Designers must match gate drive loop inductance and use Kelvin-source routing to maintain balance across units operating above 300 A aggregate.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the body diode has 60 ns t_rr and 84 nC Q_rr at 50 A, enabling efficient synchronous operation up to 100 kHz. However, external Schottky diodes are recommended for >150 kHz designs due to increased switching losses from Q_rr-related tail current.

What is the gate plateau voltage and why does it matter for drive design?

The gate plateau voltage is 4.7 V (typical), representing the Miller region where V_GS remains stable while V_DS collapses. This value determines the minimum gate drive voltage needed to fully enhance the channel and impacts gate driver selection-drivers must supply sufficient current to traverse this plateau within required switching times.

IAUA250N08S5N018AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 250A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8715 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 238W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-4

IAUA250N08S5N018AUMA1 FAQ

1.How can I place an order for IAUA250N08S5N018AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA250N08S5N018AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA250N08S5N018AUMA1 reliable?

The price and inventory of IAUA250N08S5N018AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA250N08S5N018AUMA1 is usually 5 days.

3.What payment methods are accepted for IAUA250N08S5N018AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA250N08S5N018AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA250N08S5N018AUMA1?

IAUA250N08S5N018AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA250N08S5N018AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA250N08S5N018AUMA1?

For technical support, including IAUA250N08S5N018AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA250N08S5N018AUMA1 requirements.

6.How does Aetrix verify that IAUA250N08S5N018AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA250N08S5N018AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA250N08S5N018AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUA250N08S5N018AUMA1?

All IAUA250N08S5N018AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA250N08S5N018AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA250N08S5N018AUMA1 part is unused and in its original packaging.

Return procedure for IAUA250N08S5N018AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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