Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUAN04S7N006AUMA1

Name: IAUAN04S7N006AUMA1
Brand: Infineon Technologies
SKU: IAUAN04S7N006AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IAUAN04S7N006AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUAN04S7N006AUMA1.pdf

Description:: IAUAN04S7N006AUMA1

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:475

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IAUAN04S7N006 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-1 package, rated for 40 V V_DS, 0.57 mΩ R_DS(on) at V_GS = 10 V and 100 A, with 175°C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in engine control units and 48 V mild-hybrid battery disconnect circuits.

For engineers reviewing the IAUAN04S7N006 datasheet, IAUAN04S7N006 pinout, IAUAN04S7N006 application, or IAUAN04S7N006 equivalent, key selection criteria include its 410 A chip-limited continuous drain current, 100% avalanche-tested ruggedness, MSL2a reflow compatibility, and low gate charge (Q_g = 94–123 nC) for fast switching in high-efficiency traction inverters and DC-DC converters.

Technical Context

This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 48 V automotive systems. Its 0.49 mΩ typical R_DS(on) at 100 A/10 V and 4.1 V gate plateau voltage enable stable gate drive under high di/dt conditions.

The MOSFET integrates a robust body diode with 46–92 nC Q_rr and 49–74 ns t_rr, supporting synchronous rectification and bidirectional energy flow in regenerative braking interfaces without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 48 V nominal battery systems with transient overvoltage margin
R_DS(on)	0.57 mΩ max at V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at 100 A, critical for thermal management in compact modules
I_D (chip-limited)	410 A - Supports peak load currents in starter-alternator and PTC heater drivers without derating
Q_g	94–123 nC - Reduces gate driver power demand and switching transition time in high-frequency PWM applications
t_r/t_f	9 ns / 18 ns - Minimizes switching energy loss during hard-switched operation up to 100 kHz
T_j max	+175 °C - Allows direct mounting on high-temperature heatsinks in under-hood environments
E_AS	276 mJ - Withstands single-pulse inductive energy from motor windings or solenoid coils without failure

Pinout & Package

PG-HSOF-5-1 is a surface-mount, thermally enhanced 5-pin package with exposed drain pad for low-inductance, high-current PCB routing and efficient heat transfer to internal copper planes.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main power drain connection	Internally connected to large copper clip; primary current path and thermal interface to PCB
2 (Source)	Power source reference	Low-inductance return path for high di/dt loads; tied to source of gate driver IC
3 (Gate)	Control input	High-impedance MOSFET gate requiring <1.1 Ω gate resistance for optimal turn-on/turn-off timing
4 (Source)	Secondary source connection	Redundant source terminal to reduce package inductance and improve current sharing in parallel configurations
5 (Drain)	Secondary drain connection	Additional drain terminal for symmetrical current distribution and minimized loop inductance in half-bridge layouts

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical testing	Validated beyond standard automotive stress tests including HTGB, HTRB, and UHAST for long-term reliability in safety-critical ECUs
100% unclamped inductive avalanche tested	Guarantees single-pulse ruggedness up to 276 mJ without parameter shift or latent failure
MSL2a rating (260°C peak reflow)	Enables standard lead-free SMT assembly without solder joint degradation or delamination risk
Optimized body diode Q_rr and t_rr	46–92 nC Q_rr and 49–74 ns t_rr minimize reverse recovery loss and EMI in bidirectional switching
Thermal resistance R_thJC = 0.84 K/W	Supports >150 W steady-state power dissipation with <130°C case-to-junction rise at 100 A

Applications

Engine Control Unit (ECU) High-Side Switch

48 V Mild-Hybrid Battery Disconnect

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs operating at ambient up to 125°C.

IC Role / Device Role / Timing Role: Power MOSFET acting as controlled current sink with precise pulse-width modulation at 1–10 kHz.

Use Value: 0.57 mΩ R_DS(on) limits conduction loss to <0.6 W at 30 A, reducing thermal stress on multi-layer ECU PCBs.

Use Scenario: Isolation of 48 V battery pack from DC-DC converter during fault conditions in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Bidirectional high-current switch enabling fast disconnection (<100 μs) and safe short-circuit handling.

Use Value: 410 A chip-limited current and 276 mJ avalanche energy ensure survival during bus short events without fuse intervention.

Electric Power Steering (EPS) Motor Driver

PTC Heater Module Switch

Use Scenario: Half-bridge leg in three-phase EPS motor inverter, subjected to high dv/dt and repetitive surge currents.

IC Role / Device Role / Timing Role: Low-R_DS(on) switching element with fast t_r/t_f for 20–40 kHz PWM with minimal switching loss.

Use Value: 9–18 ns switching times and 1.1 Ω gate resistance support clean edge integrity and reduced EMI emissions in safety-critical steering systems.

Use Scenario: On/off control of 5–10 kW PTC heating elements in cabin climate and battery thermal management systems.

IC Role / Device Role / Timing Role: High-current DC switch with integrated avalanche capability for inrush current and open-load transients.

Use Value: 175°C T_j rating and MSL2a reflow compatibility allow direct integration into high-power thermal modules without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027AUMA1	40 V, 0.27 mΩ R_DS(on), PG-HSOF-8 package, lower R_DS(on) but higher Q_g (145 nC)	Better conduction efficiency at <200 A; less suitable for >100 kHz switching due to higher gate charge	Select when thermal budget dominates over switching frequency constraints
IPB180N04S4H5ATMA1	40 V, 0.45 mΩ R_DS(on), TO-263-7 package, higher R_thJA (30 K/W), no AEC-Q101 extension	Higher thermal resistance limits power density; lacks extended qualification for ASIL-B systems	Acceptable for non-safety-critical 12 V auxiliary loads where cost outweighs qualification depth

Compared with IAUZ40N04S5L027AUMA1 and IPB180N04S4H5ATMA1, the IAUAN04S7N006 balances ultra-low R_DS(on), moderate Q_g, and full AEC-Q101 extension-making it optimal for space-constrained, safety-compliant 48 V power stages where both conduction and switching losses must be minimized.

Availability

IAUAN04S7N006 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid battery disconnect systems, and electric power steering motor drivers requiring stable component supply across automotive production lifecycles.

Supply support for IAUAN04S7N006 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability 48 V boardnet applications including traction inverters, DC-DC converters, and safety-critical load switches.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IAUAN04S7N006 supports 50 A continuous drain current at T_C = 100°C with DC bias and proper heatsinking per JEDEC 2s2p FR4 layout. This rating reflects thermal limitation under realistic under-hood conditions-not chip-limited current, which remains 410 A.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise automotive environments?

No. The device has a gate threshold voltage range of 2.2–3.0 V and is designed for 0–10 V gate drive. A negative turn-off voltage is not required; however, a gate resistor ≤3.5 Ω and local decoupling capacitance are recommended to suppress dv/dt-induced false turn-on in high-di/dt applications.

Can the body diode be used for synchronous rectification in a 48 V buck converter?

Yes. With 46–92 nC Q_rr and 49–74 ns t_rr, the integrated body diode supports synchronous rectification up to ~150 kHz in 48 V buck topologies. Its forward voltage of 0.8–0.95 V at 100 A enables efficiency gains over Schottky alternatives while eliminating external diode count.

Is the PG-HSOF-5-1 package compatible with automated optical inspection (AOI) after reflow?

Yes. The PG-HSOF-5-1 package features coplanar, solderable terminals and an exposed drain pad with defined stencil aperture guidelines. Its MSL2a rating and flat thermal pad support reliable AOI detection of solder joint quality, voiding, and alignment on production lines using standard 5 MP camera systems.

IAUAN04S7N006AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Ta), 410A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 0.57mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 123 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8360 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-1

IAUAN04S7N006AUMA1 FAQ

1.How can I place an order for IAUAN04S7N006AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUAN04S7N006AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUAN04S7N006AUMA1 reliable?

The price and inventory of IAUAN04S7N006AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUAN04S7N006AUMA1 is usually 5 days.

3.What payment methods are accepted for IAUAN04S7N006AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUAN04S7N006AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUAN04S7N006AUMA1?

IAUAN04S7N006AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUAN04S7N006AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUAN04S7N006AUMA1?

For technical support, including IAUAN04S7N006AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUAN04S7N006AUMA1 requirements.

6.How does Aetrix verify that IAUAN04S7N006AUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUAN04S7N006AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUAN04S7N006AUMA1 meets industry standards.

7.What is the process for return or replacement of IAUAN04S7N006AUMA1?

All IAUAN04S7N006AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUAN04S7N006AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUAN04S7N006AUMA1 part is unused and in its original packaging.

Return procedure for IAUAN04S7N006AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …